Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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NTHL025N065SC1SIC MOS TO247-3L 650V |
3514 | 22.08 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 99A (Tc) | 15V, 18V | 28.5mOhm @ 45A, 18V | 4.3V @ 15.5mA | 164 nC @ 18 V | +22V, -8V | 3480 pF @ 325 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTX170P10PMOSFET P-CH 100V 170A PLUS247-3 |
2775 | 22.60 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 12mOhm @ 500mA, 10V | 4V @ 1mA | 240 nC @ 10 V | ±20V | 12600 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK80N65X2MOSFET N-CH 650V 80A TO264 |
2930 | 22.63 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 80A (Tc) | 10V | 40mOhm @ 40A, 10V | 5.5V @ 4mA | 143 nC @ 10 V | ±30V | 8245 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCTW40N120G2VSILICON CARBIDE POWER MOSFET 120 |
3332 | 22.64 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | 4.9V @ 1mA | 61 nC @ 18 V | +22V, -10V | 1233 pF @ 800 V | - | 278W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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Таблицы данных |
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NVH4L022N120M3SSIC MOS TO247-4L 22MOHM 1200V |
2336 | 22.73 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 18V | 30mOhm @ 40A, 18V | 4.4V @ 20mA | 151 nC @ 18 V | +22V, -10V | 3175 pF @ 800 V | - | 352W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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MSC040SMA120S/TRMOSFET SIC 1200 V 40 MOHM TO-268 |
3684 | 27.85 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 64A (Tc) | 20V | 50mOhm @ 40A, 20V | 2.6V @ 2mA | 137 nC @ 20 V | +23V, -10V | 1990 pF @ 1000 V | - | 303W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTK32P60PMOSFET P-CH 600V 32A TO264 |
3413 | 22.82 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 350mOhm @ 16A, 10V | 4V @ 1mA | 196 nC @ 10 V | ±20V | 11100 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCH060N80-F155MOSFET N-CH 800V 56A TO247 |
2010 | 19.14 |
ДобавитьРасследования |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 56A (Tc) | 10V | 60mOhm @ 29A, 10V | 4.5V @ 5.8mA | 350 nC @ 10 V | ±20V | 14685 pF @ 100 V | Super Junction | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IMW120R040M1HXKSA1SIC DISCRETE |
3812 | 23.72 |
ДобавитьРасследования |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 15V, 18V | 54.4mOhm @ 19.3A, 18V | 5.2V @ 10mA | 39 nC @ 18 V | +20V, -5V | 1620 nF @ 25 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK250N10PMOSFET N-CH 100V 250A TO264AA |
3031 | 24.02 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 250A (Tc) | 10V | 6.5mOhm @ 50A, 10V | 5V @ 1mA | 205 nC @ 10 V | ±20V | 16000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPZA65R018CFD7XKSA1HIGH POWER_NEW |
3721 | 24.29 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 106A (Tc) | 10V | 18mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | ±20V | 11660 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IMBG120R030M1HXTMA1SICFET N-CH 1.2KV 56A TO263 |
3509 | 30.86 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tc) | - | 41mOhm @ 25A, 18V | 5.7V @ 11.5mA | 63 nC @ 18 V | +18V, -15V | 2290 pF @ 800 V | Standard | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IMZA120R040M1HXKSA1SIC DISCRETE |
2382 | 24.61 |
ДобавитьРасследования |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 55A (Tc) | 15V, 18V | 54.4mOhm @ 19.3A, 18V | 5.2V @ 8.3mA | 39 nC @ 18 V | +20V, -5V | 1620 nF @ 25 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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GP2T040A120USIC MOSFET 1200V 40M TO-247-3L |
3383 | 21.83 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 118 nC @ 20 V | +25V, -10V | 3192 pF @ 1000 V | - | - | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH02N450HVMOSFET N-CH 4500V 200MA TO247HV |
120 | 26.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 200mA (Tc) | 10V | 625Ohm @ 10mA, 10V | 6.5V @ 250µA | 10.6 nC @ 10 V | ±20V | 246 pF @ 25 V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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GP2T040A120HSIC MOSFET 1200V 40M TO-247-4L |
3770 | 22.29 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 52mOhm @ 40A, 20V | 4V @ 10mA | 118 nC @ 20 V | +25V, -10V | 3192 pF @ 1000 V | - | - | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX27N80QMOSFET N-CH 800V 27A PLUS247-3 |
300 | 26.82 |
ДобавитьРасследования |
Tube | HiPerFET™, Q Class | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | 10V | 320mOhm @ 500mA, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 7600 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX40N90PMOSFET N-CH 900V 40A PLUS247-3 |
2701 | 27.03 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 40A (Tc) | 10V | 230mOhm @ 20A, 10V | 6.5V @ 1mA | 230 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA4N150HVMOSFET N-CH 1500V 4A TO263 |
2195 | 27.77 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Tc) | 10V | 6Ohm @ 500mA, 10V | 5V @ 250µA | 44.5 nC @ 10 V | ±30V | 1576 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW65R018CFD7XKSA1650 V COOLMOS CFD7 SUPERJUNCTION |
2873 | 28.51 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 106A (Tc) | 10V | 18mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | ±20V | 11659 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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