Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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![]() Таблицы данных |
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APT1001RBVRGMOSFET N-CH 1000V 11A TO247 |
3124 | 14.62 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | - | 1Ohm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 3660 pF @ 25 V | - | - | - | Through Hole |
![]() Таблицы данных |
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IPW60R075CPFKSA1MOSFET N-CH 650V 39A TO247-3 |
2299 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 39A (Tc) | 10V | 75mOhm @ 26A, 10V | 3.5V @ 1.7mA | 116 nC @ 10 V | ±20V | 4000 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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R6077VNZ4C13600V 77A TO-247, PRESTOMOS WITH |
2124 | 14.74 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 77A (Tc) | 10V, 15V | 51mOhm @ 23A, 15V | 6.5V @ 1.9mA | 108 nC @ 10 V | ±30V | 5200 pF @ 100 V | - | 781W (Tc) | 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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STFW69N65M5MOSFET N-CH 650V 58A ISOWATT |
3724 | 14.75 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 45mOhm @ 29A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±25V | 6420 pF @ 100 V | - | 79W (Tc) | 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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IXTH500N04T2MOSFET N-CH 40V 500A TO247 |
2247 | 14.88 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 500A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 3.5V @ 250µA | 405 nC @ 10 V | ±20V | 25000 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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NTH4L040N65S3FMOSFET N-CH 650V 65A TO247-4 |
878 | 11.53 |
ДобавитьРасследования |
Tube,Tube | FRFET®, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 158 nC @ 10 V | ±30V | 5940 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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FDH038AN08A1MOSFET N-CH 75V 22A/80A TO247-3 |
2061 | 11.56 |
ДобавитьРасследования |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 22A (Ta), 80A (Tc) | 6V, 10V | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 8665 pF @ 25 V | - | 450W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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SIHG026N60EF-GE3EF SERIES POWER MOSFET WITH FAST |
3565 | 14.98 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 95A (Tc) | 10V | 26mOhm @ 38A, 10V | 5V @ 250µA | 227 nC @ 10 V | ±30V | 7926 pF @ 100 V | - | 521W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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NTHL080N120SC1ASICFET N-CH 1200V 31A TO247-3 |
3643 | 15.08 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1670 pF @ 800 V | - | 178W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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SCT1000N170HIP247 IN LINE |
3521 | 15.09 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 7A (Tc) | 20V | 1.3Ohm @ 3A, 20V | 3.5V @ 1mA | 13.3 nC @ 20 V | +22V, -10V | 133 pF @ 1000 V | - | 96W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
![]() Таблицы данных |
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IGOT60R070D1AUMA3GANFET N-CH |
2677 | 21.96 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolGaN™ | Active | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IXTT360N055T2MOSFET N-CH 55V 360A TO268 |
3927 | 11.89 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 360A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 250µA | 330 nC @ 10 V | ±20V | 20000 pF @ 25 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IMBG65R030M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
2820 | 22.11 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() Таблицы данных |
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APT5014BLLGMOSFET N-CH 500V 35A TO247 |
2070 | 15.47 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 35A (Tc) | 10V | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±30V | 3261 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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IXTT110N10L2-TRLMOSFET N-CH 100V 110A TO268 |
3888 | 21.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 18mOhm @ 55A, 10V | 4.5V @ 250µA | 260 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IXTA02N250HVMOSFET N-CH 2500V 200MA TO263AB |
3233 | 12.21 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 200mA (Tc) | 10V | 450Ohm @ 50mA, 10V | 4.5V @ 250µA | 7.4 nC @ 10 V | ±20V | 116 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IXFX520N075T2MOSFET N-CH 75V 520A PLUS247-3 |
192 | 15.75 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 520A (Tc) | 10V | 2.2mOhm @ 100A, 10V | 5V @ 8mA | 545 nC @ 10 V | ±20V | 41000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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C3M0065090DSICFET N-CH 900V 36A TO247-3 |
2498 | 15.75 |
ДобавитьРасследования |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 36A (Tc) | 15V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 30.4 nC @ 15 V | +18V, -8V | 660 pF @ 600 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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IXFT80N65X2HVMOSFET N-CH 650V 80A TO268HV |
210 | 15.75 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 80A (Tc) | 10V | - | 5V @ 4mA | 140 nC @ 10 V | ±30V | 8300 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IXFH100N25PMOSFET N-CH 250V 100A TO247AD |
3475 | 12.31 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 100A (Tc) | 10V | 27mOhm @ 50A, 10V | 5V @ 4mA | 185 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |