Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT1001RBVRG

Таблицы данных

APT1001RBVRG

APT1001RBVRG

MOSFET N-CH 1000V 11A TO247

Microchip Technology

3124 14.62
- +

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Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 11A (Tc) - 1Ohm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 3660 pF @ 25 V - - - Through Hole
IPW60R075CPFKSA1

Таблицы данных

IPW60R075CPFKSA1

IPW60R075CPFKSA1

MOSFET N-CH 650V 39A TO247-3

Infineon Technologies

2299 1.00
- +

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Расследования

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 39A (Tc) 10V 75mOhm @ 26A, 10V 3.5V @ 1.7mA 116 nC @ 10 V ±20V 4000 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6077VNZ4C13

Таблицы данных

R6077VNZ4C13

R6077VNZ4C13

600V 77A TO-247, PRESTOMOS WITH

Rohm Semiconductor

2124 14.74
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V, 15V 51mOhm @ 23A, 15V 6.5V @ 1.9mA 108 nC @ 10 V ±30V 5200 pF @ 100 V - 781W (Tc) 150°C (TJ) Through Hole
STFW69N65M5

Таблицы данных

STFW69N65M5

STFW69N65M5

MOSFET N-CH 650V 58A ISOWATT

STMicroelectronics

3724 14.75
- +

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Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 45mOhm @ 29A, 10V 5V @ 250µA 143 nC @ 10 V ±25V 6420 pF @ 100 V - 79W (Tc) 150°C (TJ) Through Hole
IXTH500N04T2

Таблицы данных

IXTH500N04T2

IXTH500N04T2

MOSFET N-CH 40V 500A TO247

IXYS

2247 14.88
- +

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Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 500A (Tc) 10V 1.6mOhm @ 100A, 10V 3.5V @ 250µA 405 nC @ 10 V ±20V 25000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTH4L040N65S3F

Таблицы данных

NTH4L040N65S3F

NTH4L040N65S3F

MOSFET N-CH 650V 65A TO247-4

onsemi

878 11.53
- +

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Tube,Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 158 nC @ 10 V ±30V 5940 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDH038AN08A1

Таблицы данных

FDH038AN08A1

FDH038AN08A1

MOSFET N-CH 75V 22A/80A TO247-3

onsemi

2061 11.56
- +

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Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 22A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 8665 pF @ 25 V - 450W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG026N60EF-GE3

Таблицы данных

SIHG026N60EF-GE3

SIHG026N60EF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

3565 14.98
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 95A (Tc) 10V 26mOhm @ 38A, 10V 5V @ 250µA 227 nC @ 10 V ±30V 7926 pF @ 100 V - 521W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL080N120SC1A

Таблицы данных

NTHL080N120SC1A

NTHL080N120SC1A

SICFET N-CH 1200V 31A TO247-3

onsemi

3643 15.08
- +

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Расследования

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25V, -15V 1670 pF @ 800 V - 178W (Tc) -55°C ~ 175°C (TJ) Through Hole
SCT1000N170

Таблицы данных

SCT1000N170

SCT1000N170

HIP247 IN LINE

STMicroelectronics

3521 15.09
- +

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Расследования

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 7A (Tc) 20V 1.3Ohm @ 3A, 20V 3.5V @ 1mA 13.3 nC @ 20 V +22V, -10V 133 pF @ 1000 V - 96W (Tc) -55°C ~ 200°C (TJ) Through Hole
IGOT60R070D1AUMA3

Таблицы данных

IGOT60R070D1AUMA3

IGOT60R070D1AUMA3

GANFET N-CH

Infineon Technologies

2677 21.96
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolGaN™ Active N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT360N055T2

Таблицы данных

IXTT360N055T2

IXTT360N055T2

MOSFET N-CH 55V 360A TO268

IXYS

3927 11.89
- +

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Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 360A (Tc) 10V 2.4mOhm @ 100A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 20000 pF @ 25 V - 935W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IMBG65R030M1HXTMA1 IMBG65R030M1HXTMA1

IMBG65R030M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies

2820 22.11
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® * Active - - - - - - - - - - - - - -
APT5014BLLG

Таблицы данных

APT5014BLLG

APT5014BLLG

MOSFET N-CH 500V 35A TO247

Microchip Technology

2070 15.47
- +

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Расследования

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 35A (Tc) 10V 140mOhm @ 17.5A, 10V 5V @ 1mA 72 nC @ 10 V ±30V 3261 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT110N10L2-TRL

Таблицы данных

IXTT110N10L2-TRL

IXTT110N10L2-TRL

MOSFET N-CH 100V 110A TO268

IXYS

3888 21.05
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 18mOhm @ 55A, 10V 4.5V @ 250µA 260 nC @ 10 V ±20V 10500 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA02N250HV

Таблицы данных

IXTA02N250HV

IXTA02N250HV

MOSFET N-CH 2500V 200MA TO263AB

IXYS

3233 12.21
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 2500 V 200mA (Tc) 10V 450Ohm @ 50mA, 10V 4.5V @ 250µA 7.4 nC @ 10 V ±20V 116 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX520N075T2

Таблицы данных

IXFX520N075T2

IXFX520N075T2

MOSFET N-CH 75V 520A PLUS247-3

IXYS

192 15.75
- +

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Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 520A (Tc) 10V 2.2mOhm @ 100A, 10V 5V @ 8mA 545 nC @ 10 V ±20V 41000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
C3M0065090D

Таблицы данных

C3M0065090D

C3M0065090D

SICFET N-CH 900V 36A TO247-3

Wolfspeed, Inc.

2498 15.75
- +

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Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 36A (Tc) 15V 78mOhm @ 20A, 15V 2.1V @ 5mA 30.4 nC @ 15 V +18V, -8V 660 pF @ 600 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT80N65X2HV

Таблицы данных

IXFT80N65X2HV

IXFT80N65X2HV

MOSFET N-CH 650V 80A TO268HV

IXYS

210 15.75
- +

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Расследования

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V - 5V @ 4mA 140 nC @ 10 V ±30V 8300 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH100N25P

Таблицы данных

IXFH100N25P

IXFH100N25P

MOSFET N-CH 250V 100A TO247AD

IXYS

3475 12.31
- +

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Расследования

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 250 V 100A (Tc) 10V 27mOhm @ 50A, 10V 5V @ 4mA 185 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Through Hole
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