Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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IXFR200N10PMOSFET N-CH 100V 133A ISOPLUS247 |
2055 | 18.58 |
ДобавитьРасследования |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 133A (Tc) | 10V | 9mOhm @ 100A, 10V | 5V @ 8mA | 235 nC @ 10 V | ±20V | 7600 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH220N20X4MOSFET N-CH 200V 220A X4 TO-247 |
2407 | 18.68 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 220A (Tc) | 10V | 5.5mOhm @ 110A, 10V | 4.5V @ 250µA | 157 nC @ 10 V | ±20V | 12300 pF @ 25 V | - | 800W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTT220N20X4HVMOSFET N-CH 200V 220A X4 TO268HV |
3870 | 18.88 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 220A (Tc) | 10V | 5.5mOhm @ 110A, 10V | 4.5V @ 250µA | 157 nC @ 10 V | ±20V | 12300 pF @ 25 V | - | 800W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTQ30N60L2MOSFET N-CH 600V 30A TO3P |
273 | 18.96 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 4.5V @ 250µA | 335 nC @ 10 V | ±20V | 10700 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT5010LVRGMOSFET N-CH 500V 47A TO264 |
2128 | 19.14 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 47A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFH150N20TMOSFET N-CH 200V 150A TO247AD |
3029 | 19.19 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 150A (Tc) | 10V | 15mOhm @ 75A, 10V | 5V @ 4mA | 177 nC @ 10 V | ±20V | 11700 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IGLD60R070D1AUMA3GANFET N-CH |
2764 | 25.42 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolGaN™ | Active | N-Channel | GaNFET (Gallium Nitride) | 600 V | 15A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IGT60R070D1ATMA4GANFET N-CH |
2731 | 25.43 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolGaN™ | Active | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW90R120C3XKSA1MOSFET N-CH 900V 36A TO247-3 |
3364 | 19.43 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 36A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 2.9mA | 270 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH80N65X2-4MOSFET N-CH 650V 80A TO247-4L |
3870 | 15.94 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 80A (Tc) | 10V | 38mOhm @ 500mA, 10V | 5V @ 4mA | 140 nC @ 10 V | ±30V | 8300 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH110N10L2MOSFET N-CH 100V 110A TO247 |
2626 | 19.77 |
ДобавитьРасследования |
Bulk | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 18mOhm @ 500mA, 10V | 4.5V @ 250µA | 260 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 600W (Tc) | - | Through Hole |
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Таблицы данных |
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IXTK102N65X2MOSFET N-CH 650V 102A TO264 |
3040 | 20.12 |
ДобавитьРасследования |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 102A (Tc) | 10V | 30mOhm @ 51A, 10V | 5V @ 250µA | 152 nC @ 10 V | ±30V | 10900 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IMBG65R022M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
3323 | 26.96 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NTH4L027N65S3FMOSFET N-CH 650V 75A TO247-4 |
3493 | 16.56 |
ДобавитьРасследования |
Tube | FRFET®, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 3mA | 259 nC @ 10 V | ±30V | 7690 pF @ 400 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK150N30P3MOSFET N-CH 300V 150A TO264AA |
3498 | 21.36 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 150A (Tc) | 10V | 19mOhm @ 75A, 10V | 5V @ 8mA | 197 nC @ 10 V | ±20V | 12100 pF @ 25 V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTHL045N065SC1SIC MOS TO247-3L 650V |
3008 | 21.69 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 66A (Tc) | 15V, 18V | 50mOhm @ 25A, 18V | 4.3V @ 8mA | 105 nC @ 18 V | +22V, -8V | 1870 pF @ 325 V | - | 291W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTHL019N65S3HMOSFET N-CH 650V 75A TO247-3 |
2548 | 21.79 |
ДобавитьРасследования |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | - | 19.3mOhm @ 37.5A, 10V | 4V @ 14.3mA | 282 nC @ 10 V | ±30V | 15993 pF @ 400 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTR102N65X2MOSFET N-CH 650V 54A ISOPLUS247 |
2580 | 21.86 |
ДобавитьРасследования |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 54A (Tc) | 10V | 33mOhm @ 51A, 10V | 5V @ 250µA | 152 nC @ 10 V | ±30V | 10900 pF @ 25 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK220N20X3MOSFET N-CH 200V 220A TO264 |
3715 | 21.86 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 220A (Tc) | 10V | 6.2mOhm @ 110A, 10V | 4.5V @ 4mA | 204 nC @ 10 V | ±20V | 13600 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH24N50LMOSFET N-CH 500V 24A TO247 |
2932 | 22.07 |
ДобавитьРасследования |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 24A (Tc) | 20V | 300mOhm @ 500mA, 20V | 5V @ 250µA | 160 nC @ 20 V | ±30V | 2500 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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