Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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NTHL040N65S3HFMOSFET N-CH 650V 65A TO247-3 |
290 | 12.53 |
ДобавитьРасследования |
Bulk,Tube | FRFET®, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 159 nC @ 10 V | ±30V | 5945 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCTH40N120G2V-7SILICON CARBIDE POWER MOSFET 120 |
2793 | 21.24 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NVHL080N120SC1SICFET N-CH 1200V 44A TO247-3 |
2470 | 12.79 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 44A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1670 pF @ 800 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH1N170DHVMOSFET N-CH 1700V 1A TO247HV |
3971 | 16.33 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1700 V | 1A (Tj) | 0V | 16Ohm @ 500mA, 0V | 4.5V @ 250µA | 47 nC @ 5 V | ±20V | 3090 pF @ 25 V | Depletion Mode | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW48NM60NMOSFET N-CH 600V 44A TO247 |
2446 | 16.35 |
ДобавитьРасследования |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 44A (Tc) | 10V | 70mOhm @ 20A, 10V | 4V @ 250µA | 124 nC @ 10 V | ±25V | 4285 pF @ 50 V | - | 330W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH75N10L2MOSFET N-CH 100V 75A TO247 |
2645 | 16.55 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 21mOhm @ 500mA, 10V | 4.5V @ 250µA | 215 nC @ 10 V | ±20V | 8100 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK120N20PMOSFET N-CH 200V 120A TO264AA |
3815 | 13.21 |
ДобавитьРасследования |
Bulk | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 120A (Tc) | 10V | 22mOhm @ 500mA, 10V | 5V @ 4mA | 152 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 714W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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HUF75852G3MOSFET N-CH 150V 75A TO247-3 |
10807 | 13.22 |
ДобавитьРасследования |
Bulk,Tube | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 75A (Tc) | 10V | 16mOhm @ 75A, 10V | 4V @ 250µA | 480 nC @ 20 V | ±20V | 7690 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCTL35N65G2VTRANS SJT N-CH 650V PWRFLAT HV |
2317 | 22.08 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | - | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 417W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPDQ60R022S7XTMA1HIGH POWER_NEW PG-HDSOP-22 |
2247 | 19.01 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXFK90N65X3MOSFET 90A 650V X3 TO264K |
2285 | 17.56 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPZA65R029CFD7XKSA1650V FET COOLMOS TO247 |
2685 | 17.65 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 69A (Tc) | 10V | 29mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 145 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 305W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW65R041CFDFKSA2MOSFET N-CH 650V 68.5A TO247-3 |
2568 | 17.75 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 68.5A (Tc) | 10V | 41mOhm @ 33.1A, 10V | 4.5V @ 3.3mA | 300 nC @ 10 V | ±20V | 8400 pF @ 100 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCH085N80-F155MOSFET N-CH 800V 46A TO247 |
2787 | 14.22 |
ДобавитьРасследования |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 46A (Tc) | 10V | 85mOhm @ 23A, 10V | 4.5V @ 4.6mA | 255 nC @ 10 V | ±20V | 10825 pF @ 100 V | Super Junction | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AIMW120R080M1XKSA11200V COOLSIC MOSFET PG-TO247-3 |
2232 | 17.81 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A (Tc) | 15V | 104mOhm @ 13A, 15V | 5.7V @ 5.6mA | 28 nC @ 15 V | +20V, -7V | 1060 pF @ 800 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX80N60P3MOSFET N-CH 600V 80A PLUS247-3 |
3370 | 18.06 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 80A (Tc) | 10V | 70mOhm @ 500mA, 10V | 5V @ 8mA | 190 nC @ 10 V | ±30V | 13100 pF @ 25 V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK120N30P3MOSFET N-CH 300V 120A TO264AA |
2055 | 18.16 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 120A (Tc) | 10V | 27mOhm @ 60A, 10V | 5V @ 4mA | 150 nC @ 10 V | ±20V | 8630 pF @ 25 V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTP64N10L2MOSFET N-CH 100V 64A TO220AB |
2797 | 18.21 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 64A (Tc) | 10V | 32mOhm @ 32A, 10V | 4.5V @ 250µA | 100 nC @ 10 V | ±20V | 3620 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH68P20TMOSFET P-CH 200V 68A TO247 |
3792 | 18.42 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 68A (Tc) | 10V | 55mOhm @ 34A, 10V | 4V @ 250µA | 380 nC @ 10 V | ±15V | 33400 pF @ 25 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW65R029CFD7XKSA1MOSFET N-CH 650V 69A TO247-3 |
3289 | 18.56 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 69A (Tc) | - | 29mOhm @ 35.8A, 10V | 4.5V @ 1.79mA | 145 nC @ 10 V | ±20V | 7149 pF @ 400 V | - | 305W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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