Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SPW35N60CFDFKSA1MOSFET N-CH 600V 34.1A TO247-3 |
3505 | 12.90 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 34.1A (Tc) | 10V | 118mOhm @ 21.6A, 10V | 5V @ 1.9mA | 212 nC @ 10 V | ±20V | 5060 pF @ 25 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW68N65DM6-4AGMOSFET N-CH 650V 72A TO247-4 |
3614 | 12.90 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 72A (Tc) | - | 39mOhm @ 36A, 10V | 4.75V @ 250µA | 118 nC @ 10 V | ±25V | 5900 pF @ 100 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SQW61N65EF-GE3MOSFET N-CH 650V 62A TO247AD |
3554 | 12.90 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 62A (Tc) | - | 52mOhm @ 32A, 10V | 4V @ 250µA | 344 nC @ 10 V | ±30V | 7379 pF @ 100 V | - | 625W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTK100N25PMOSFET N-CH 250V 100A TO264 |
3320 | 12.92 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 100A (Tc) | 10V | 27mOhm @ 500mA, 10V | 5V @ 250µA | 185 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTK150N15PMOSFET N-CH 150V 150A TO264 |
2928 | 12.92 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 150A (Tc) | 10V | 13mOhm @ 500mA, 10V | 5V @ 250µA | 190 nC @ 10 V | ±20V | 5800 pF @ 25 V | - | 714W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH16N50D2MOSFET N-CH 500V 16A TO247-3 |
2831 | 12.95 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 16A (Tc) | 0V | 240mOhm @ 8A, 0V | - | 199 nC @ 5 V | ±20V | 5250 pF @ 25 V | Depletion Mode | 695W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTMTS0D7N06CTXGMOSFET N-CH 60V 60.5A/464A 8DFNW |
24593 | 16.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60.5A (Ta), 464A (Tc) | 10V | 0.72mOhm @ 50A, 10V | 4V @ 250µA | 152 nC @ 10 V | ±20V | 11535 pF @ 30 V | - | 5W (Ta), 294.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMTS0D7N06CLTXGMOSFET N-CH 60V 62.2A/477A 8DFNW |
3977 | 16.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 62.2A (Ta), 477A (Tc) | 4.5V, 10V | 0.68mOhm @ 50A, 10V | 2.5V @ 250µA | 225 nC @ 10 V | ±20V | 16200 pF @ 25 V | - | 5W (Ta), 294.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTE2394MOSFET N-CHANNEL 500V 14A TO3P |
3964 | 13.10 |
ДобавитьРасследования |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 400mOhm @ 7.9A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 180W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH3N150MOSFET N-CH 1500V 3A TO247 |
3100 | 13.11 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 3A (Tc) | 10V | 7.3Ohm @ 1.5A, 10V | 5V @ 250µA | 38.6 nC @ 10 V | ±30V | 1375 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTT88N30PMOSFET N-CH 300V 88A TO268 |
3570 | 13.28 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 88A (Tc) | 10V | 40mOhm @ 44A, 10V | 5V @ 250µA | 180 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFP4668PBFXKMA1TRENCH >=100V PG-TO247-3 |
2551 | 10.40 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 130A (Tc) | 10V | 9.7mOhm @ 81A, 10V | 5V @ 250µA | 241 nC @ 10 V | ±30V | 10720 pF @ 50 V | - | 520W | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STFW12N120K5MOSFET N-CH 1200V 12A ISOWATT |
2042 | 13.50 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTE222MOSFET N-CHANNEL 25V 50MA TO72 |
3729 | 13.54 |
ДобавитьРасследования |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 50mA (Tj) | - | - | 4V @ 20µA | - | - | 3300 pF @ 15 V | - | 360mW (Ta), 1.2mW (Tc) | -65°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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APT6029BLLGMOSFET N-CH 600V 21A TO247 |
2560 | 13.56 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | - | 290mOhm @ 10.5A, 10V | 5V @ 1mA | 65 nC @ 10 V | - | 2615 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX360N10TMOSFET N-CH 100V 360A PLUS247-3 |
2675 | 13.56 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 360A (Tc) | 10V | 2.9mOhm @ 100A, 10V | 5V @ 3mA | 525 nC @ 10 V | ±20V | 33000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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TP65H050G4BS650 V 34 A GAN FET |
3693 | 13.65 |
ДобавитьРасследования |
Tube | SuperGaN® | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 34A (Tc) | 10V | 60mOhm @ 22A, 10V | 4.8V @ 700µA | 24 nC @ 10 V | ±20V | 1000 pF @ 400 V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT20M38BVRGMOSFET N-CH 200V 67A TO247 |
3364 | 13.81 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 6120 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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2SK1629-EN-CHANNEL POWER MOSFET |
2441 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STW75N65DM6-4N-CHANNEL 650 V, 33 MOHM TYP., 7 |
100 | 14.57 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 36mOhm @ 37.5A, 10V | 4.75V @ 250µA | 118 nC @ 10 V | ±25V | 5700 pF @ 100 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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