Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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PMH400UNEHMOSFET N-CH 30V 900MA DFN0606-3 |
3795 | 0.06 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 900mA (Ta) | 1.5V, 4.5V | 460mOhm @ 700mA, 4.5V | 950mV @ 250µA | 0.93 nC @ 4.5 V | ±8V | 4540 pF @ 15 V | - | 360mW (Ta), 2.23W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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XP261N70023R-GMOSFET N-CH 60V 150MA SOT323-3 |
2423 | 0.06 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 150mA (Ta) | 4.5V, 10V | 5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.38 nC @ 10 V | ±20V | 18 pF @ 20 V | - | 350mW (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMG2302UK-13MOSFET N-CH 20V 2.8A SOT23 |
2730 | 0.06 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.8A (Ta) | 2.5V, 4.5V | 90mOhm @ 3.6A, 4.5V | 1V @ 250µA | 2.8 nC @ 10 V | ±12V | 130 pF @ 10 V | - | 660mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMN63D1LW-7MOSFET N-CH 60V 380MA SOT323 |
2379 | 0.06 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 380mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 1mA | 0.3 nC @ 4.5 V | ±20V | 30 pF @ 25 V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTN200N10TMOSFET N-CH 100V 200A SOT227B |
3705 | 39.29 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 5.5mOhm @ 50A, 10V | 4.5V @ 250µA | 152 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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SCTWA90N65G2VSILICON CARBIDE POWER MOSFET 650 |
3389 | 39.30 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 119A (Tc) | 18V | 24mOhm @ 50A, 18V | 5V @ 1mA | 157 nC @ 18 V | +22V, -10V | 3380 pF @ 400 V | - | 565W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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Таблицы данных |
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NVHL025N65S3MOSFET N-CH 650V 75A TO247-3 |
3828 | 33.68 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 25mOhm @ 37.5A, 10V | 4.5V @ 3mA | 236 nC @ 10 V | ±30V | 7330 pF @ 400 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCTWA90N65G2V-4TRANS SJT N-CH 650V 119A HIP247 |
2973 | 39.82 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 119A (Tc) | - | 24mOhm @ 50A, 18V | 5V @ 1mA | 157 nC @ 18 V | +22V, -10V | 3380 pF @ 400 V | - | 565W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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Таблицы данных |
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APT5010JVFRMOSFET N-CH 500V 44A ISOTOP |
2154 | 41.05 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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APT8030JVFRMOSFET N-CH 800V 25A ISOTOP |
3383 | 41.05 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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IXTH1N250MOSFET N-CH 2500V 1.5A TO-247AD |
3997 | 41.37 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 1.5A (Tc) | - | 40Ohm @ 750mA, 10V | 4V @ 250µA | 41 nC @ 10 V | - | 1660 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IMZA120R020M1HXKSA1SIC DISCRETE |
3833 | 42.02 |
ДобавитьРасследования |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 98A (Tc) | 15V, 18V | 26.9mOhm @ 41A, 18V | 5.2V @ 17.6mA | 83 nC @ 18 V | +20V, -5V | 3460 nF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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LSIC1MO120G0025MOSFET SIC 1200V 70A TO247-4L |
3176 | 44.16 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 20V | 32mOhm @ 50A, 20V | 4V @ 30mA | 265 nC @ 20 V | +22V, -6V | 495 pF @ 800 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IMW120R014M1HXKSA1SIC DISCRETE |
2381 | 53.30 |
ДобавитьРасследования |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 127A (Tc) | 15V, 18V | 18.4mOhm @ 54.3A, 18V | 5.2V @ 23.4mA | 110 nC @ 18 V | +20V, -5V | 4580 nF @ 25 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXKN45N80CMOSFET N-CH 800V 44A SOT-227B |
2377 | 54.95 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | 10V | 74mOhm @ 44A, 10V | 3.9V @ 4mA | 360 nC @ 10 V | ±20V | - | Super Junction | 380W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IMZA120R014M1HXKSA1SIC DISCRETE |
2742 | 55.86 |
ДобавитьРасследования |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 127A (Tc) | 15V, 18V | 18.4mOhm @ 54.3A, 18V | 5.2V @ 23.4mA | 110 nC @ 18 V | +20V, -5V | 4580 nF @ 25 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTN120P20TMOSFET P-CH 200V 106A SOT227B |
3266 | 57.73 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 106A (Tc) | 10V | 30mOhm @ 60A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 73000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTK400N15X4MOSFET N-CH 150V 400A TO264 |
2579 | 58.03 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4.5V @ 1mA | 430 nC @ 10 V | ±20V | 14500 pF @ 25 V | - | 1500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTN240N075L2MOSFET N-CH 75V 225A SOT227B |
2417 | 55.07 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 225A (Tc) | 10V | 7mOhm @ 120A, 10V | 4.5V @ 3mA | 546 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTX1R4N450HVMOSFET N-CH 4500V 1.4A TO247PLUS |
2670 | 72.48 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 4500 V | 1.4A (Tc) | 10V | 40Ohm @ 50mA, 10V | 6V @ 250µA | 88 nC @ 10 V | ±20V | 3300 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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