Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IPDQ60R010S7XTMA1HIGH POWER_NEW PG-HDSOP-22 |
3779 | 36.44 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.08mA | 318 nC @ 12 V | ±20V | 11987 pF @ 300 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SCT2080KECSICFET N-CH 1200V 40A TO247 |
2278 | 22.56 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106 nC @ 18 V | +22V, -6V | 2080 pF @ 800 V | - | 262W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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NVH4L015N065SC1SIC MOS TO247-4L 650V |
2050 | 25.98 |
ДобавитьРасследования |
Tray | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 142A (Tc) | 15V, 18V | 18mOhm @ 75A, 18V | 4.3V @ 25mA | 283 nC @ 18 V | +22V, -8V | 4790 pF @ 325 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTBG015N065SC1SILICON CARBIDE MOSFET, NCHANNEL |
3418 | 40.96 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 145A (Tc) | 15V, 18V | 18mOhm @ 75A, 18V | 4.3V @ 25mA | 283 nC @ 18 V | +22V, -8V | 4689 pF @ 325 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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LSIC1MO120G0040MOSFET SIC 1200V 50A TO247-4L |
2939 | 30.62 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 70A (Tc) | 20V | 50mOhm @ 40A, 20V | 4V @ 20mA | 175 nC @ 20 V | +22V, -6V | 317 pF @ 800 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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2SK1520-EN-CHANNEL POWER MOSFET |
2441 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
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IXTK120P20TMOSFET P-CH 200V 120A TO264 |
3390 | 30.81 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 120A (Tc) | - | 30mOhm @ 60A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | - | 73000 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFN80N60P3MOSFET N-CH 600V 66A SOT-227B |
3625 | 31.31 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 66A (Tc) | 10V | 70mOhm @ 40A, 10V | 5V @ 8mA | 190 nC @ 10 V | ±30V | 13100 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IPDQ60R010S7AXTMA1AUTOMOTIVE PG-HDSOP-22 |
3955 | 40.08 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.08mA | 318 nC @ 12 V | ±20V | 11987 pF @ 300 V | - | 694W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SCTL90N65G2VSILICON CARBIDE POWER MOSFET 650 |
2902 | 39.05 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | 18V | 24mOhm @ 40A, 18V | 5V @ 1mA | 157 nC @ 18 V | +22V, -10V | 3380 pF @ 400 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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APT50M75JLLU2MOSFET N-CH 500V 51A SOT227 |
2644 | 32.42 |
ДобавитьРасследования |
Bulk | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 25.5A, 10V | 5V @ 1mA | 123 nC @ 10 V | ±30V | 5590 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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SCTWA60N120G2-4SILICON CARBIDE POWER MOSFET 120 |
2516 | 32.93 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 18V | 52mOhm @ 30A, 18V | 5V @ 1mA | 94 nC @ 18 V | +22V, -10V | 1969 pF @ 800 V | - | 388W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN100N65X2MOSFET N-CH 650V 78A SOT227B |
2645 | 34.39 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 78A (Tc) | 10V | 30mOhm @ 50A, 10V | 5V @ 4mA | 183 nC @ 10 V | ±30V | 10800 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTN32P60PMOSFET P-CH 600V 32A SOT227B |
3676 | 37.01 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 350mOhm @ 500mA, 10V | 4V @ 1mA | 196 nC @ 10 V | ±20V | 11100 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTN90P20PMOSFET P-CH 200V 90A SOT227B |
2394 | 37.01 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 44mOhm @ 500mA, 10V | 4V @ 1mA | 205 nC @ 10 V | ±20V | 12000 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXKN40N60CMOSFET N-CH 600V 40A SOT-227B |
2448 | 38.14 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 70mOhm @ 500mA, 10V | 3.9V @ 2.5mA | 250 nC @ 10 V | ±20V | - | Super Junction | 290W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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BSS138WQ-13-FBSS FAMILY SOT323 T&R 10K |
3212 | 0.04 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 280mA (Ta) | 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 250µA | 1.5 nC @ 10 V | ±20V | 48 pF @ 25 V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMN2310UWQ-13MOSFET BVDSS: 8V~24V SOT323 T&R |
2713 | 0.04 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.3A (Ta) | 1.8V, 4.5V | 200mOhm @ 300mA, 4.5V | 950mV @ 250µA | 0.7 nC @ 4.5 V | ±8V | 38 pF @ 10 V | - | 450mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMN31D5UFO-7BMOSFET BVDSS: 25V~30V X2-DFN0604 |
3932 | 0.04 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 410mA (Ta) | 1.5V, 4.5V | 1.5Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.38 nC @ 4.5 V | ±12V | 22.6 pF @ 15 V | - | 380mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DMN2991UFO-7BMOSFET BVDSS: 8V~24V X2-DFN0604- |
3518 | 0.04 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 540mA (Ta) | 1.5V, 4.5V | 990mOhm @ 100mA, 4.5V | 1V @ 250µA | 0.35 nC @ 4.5 V | ±8V | 21.5 pF @ 15 V | - | 440mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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