Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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IPP65R065C7XKSA1MOSFET N-CH 650V 33A TO220-3 |
2440 | 11.20 |
ДобавитьРасследования |
Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64 nC @ 10 V | ±20V | 3020 pF @ 400 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX78N50P3MOSFET N-CH 500V 78A PLUS247-3 |
3842 | 14.01 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 78A (Tc) | 10V | 68mOhm @ 500mA, 10V | 5V @ 4mA | 147 nC @ 10 V | ±30V | 9900 pF @ 25 V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW65R041CFD7XKSA1650V FET COOLMOS TO247 |
3893 | 14.13 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 41mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFT140N10PMOSFET N-CH 100V 140A TO268 |
2653 | 11.00 |
ДобавитьРасследования |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V | 11mOhm @ 70A, 10V | 5V @ 4mA | 155 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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STWA75N65DM6N-CHANNEL 650 V, 33 MOHM TYP., 7 |
3484 | 14.32 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 36mOhm @ 37.5A, 10V | 4.75V @ 250µA | 118 nC @ 10 V | ±25V | 5700 pF @ 100 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT30M85BVRGMOSFET N-CH 300V 40A TO247 |
3940 | 11.53 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 40A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | ±30V | 4950 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFH26N65X2IXFH26N65X2 |
2020 | 11.57 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 26A (Tc) | 10V | 130mOhm @ 500mA, 10V | 5V @ 2.5mA | 45 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ150N15PMOSFET N-CH 150V 150A TO3P |
3530 | 11.76 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 150A (Tc) | 10V | 13mOhm @ 500mA, 10V | 5V @ 250µA | 190 nC @ 10 V | ±20V | 5800 pF @ 25 V | - | 714W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH6N120PMOSFET N-CH 1200V 6A TO247AD |
2278 | 11.77 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 6A (Tc) | 10V | 2.4Ohm @ 500mA, 10V | 5V @ 1mA | 92 nC @ 10 V | ±30V | 2830 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STWA65N65DM2AGMOSFET N-CH 650V 60A TO247 |
3330 | 11.80 |
ДобавитьРасследования |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±25V | 5500 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH94N20X4MOSFET N-CH 200V 94A X4 TO-247 |
3816 | 11.98 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 94A (Tc) | 10V | 10.6mOhm @ 47A, 10V | 4.5V @ 250µA | 77 nC @ 10 V | ±20V | 5050 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NVBG080N120SC1SICFET N-CH 1200V 30A D2PAK-7 |
3089 | 13.77 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1154 pF @ 800 V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IMBG65R039M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
3997 | 17.89 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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STP12N120K5MOSFET N-CH 1200V 12A TO220 |
2721 | 12.43 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFA130N15X3MOSFET N-CH 150V 130A TO263AA |
2282 | 9.65 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 130A (Tc) | 10V | 9mOhm @ 65A, 10V | 4.5V @ 1.5mA | 80 nC @ 10 V | ±20V | 5230 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NVHL082N65S3FMOSFET N-CH 650V 40A TO247-3 |
1350 | 9.68 |
ДобавитьРасследования |
Bulk,Tube | Automotive, AEC-Q101, SuperFET® III, FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 81 nC @ 10 V | ±30V | 3410 pF @ 400 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH94N30P3MOSFET N-CH 300V 94A TO247 |
3611 | 12.54 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 94A (Tc) | 10V | 36mOhm @ 47A, 10V | 5V @ 4mA | 102 nC @ 10 V | ±20V | 5510 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP94N20X4MOSFET 200V 94A N-CH ULTRA TO220 |
3894 | 12.54 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 94A (Tc) | 10V | 10.6mOhm @ 47A, 10V | 4.5V @ 250µA | 77 nC @ 10 V | ±20V | 5050 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH110N25TMOSFET N-CH 250V 110A TO247AD |
3449 | 9.69 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 110A (Tc) | 10V | 24mOhm @ 55A, 10V | 4.5V @ 3mA | 157 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IMBG120R060M1HXTMA1SICFET N-CH 1.2KV 36A TO263 |
2638 | 17.71 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | - | 83mOhm @ 13A, 18V | 5.7V @ 5.6mA | 34 nC @ 18 V | +18V, -15V | 1145 pF @ 800 V | Standard | 181W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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