Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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FDP039N08B-F102MOSFET N-CH 80V 120A TO220-3 |
3050 | 8.20 |
ДобавитьРасследования |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 3.9mOhm @ 100A, 10V | 4.5V @ 250µA | 133 nC @ 10 V | ±20V | 9450 pF @ 40 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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RFH75N05EN-CHANNEL POWER MOSFET |
2730 | 0.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 400 nC @ 20 V | ±20V | - | - | 240W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH120N20X4MOSFET |
2501 | 10.21 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 120A (Tc) | 10V | 9.5mOhm @ 60A, 10V | 4.5V @ 250µA | 108 nC @ 10 V | ±20V | 6100 pF @ 25 V | - | 417W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPB65R050CFD7AATMA1AUTOMOTIVE_COOLMOS PG-TO263-3 |
2316 | 14.80 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 50mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±30V | 4975 pF @ 400 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT5020BVRGMOSFET N-CH 500V 26A TO247 |
2074 | 10.37 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | - | 200mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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NTBGS001N06CPOWER MOSFET, 60 V, 1.1 M?, 342 |
3425 | 15.03 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 42A (Ta), 342A (Tc) | 10V, 12V | 1.1mOhm @ 112A, 12V | 4V @ 562µA | 139 nC @ 10 V | ±20V | 11110 pF @ 30 V | - | 3.7W (Ta), 245W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFP4668PBFMOSFET N-CH 200V 130A TO247AC |
2902 | 10.40 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 130A (Tc) | 10V | 9.7mOhm @ 81A, 10V | 5V @ 250µA | 241 nC @ 10 V | ±30V | 10720 pF @ 50 V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP4468PBFXKMA1TRENCH >=100V PG-TO247-3 |
2235 | 10.40 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 290A (Tc) | 10V | 2.6mOhm @ 180A, 10V | 4V @ 250µA | 540 nC @ 10 V | ±20V | 19860 pF @ 50 V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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PJMH074N60FRC_T0_00601600V/ 74MOHM / 53A/ FAST RECOVER |
2471 | 8.36 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPW65R060CFD7XKSA1650V FET COOLMOS TO247 |
3647 | 10.54 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 36A (Tc) | 10V | 60mOhm @ 16.4A, 10V | 4.5V @ 860µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH30N60PMOSFET N-CH 600V 30A TO247AD |
2822 | 10.67 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 5V @ 4mA | 82 nC @ 10 V | ±30V | 4000 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP60R040S7XKSA1HIGH POWER_NEW PG-TO220-3 |
3169 | 10.73 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | 3127 pF @ 300 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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LSIC1MO170T0750SICFET N-CH 1700V 6.4A TO263-7L |
3381 | 10.75 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5A (Tc) | - | - | - | - | - | - | - | - | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTT140N10PMOSFET N-CH 100V 140A TO268 |
3396 | 10.78 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V, 15V | 11mOhm @ 70A, 10V | 5V @ 250µA | 155 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NVBG045N065SC1SIC MOS D2PAK-7L 650V |
2840 | 12.41 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 62A (Tc) | 15V, 18V | 50mOhm @ 25A, 18V | 4.3V @ 8mA | 105 nC @ 18 V | +22V, -8V | 1890 pF @ 325 V | - | 242W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFT96N20PMOSFET N-CH 200V 96A TO268 |
2009 | 11.00 |
ДобавитьРасследования |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 96A (Tc) | 10V | 24mOhm @ 500mA, 10V | 5V @ 4mA | 145 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFT42N50P2MOSFET N-CH 500V 42A TO268 |
300 | 11.00 |
ДобавитьРасследования |
Tube | HiPerFET™, PolarP2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 42A (Tc) | 10V | 145mOhm @ 500mA, 10V | 4.5V @ 4mA | 92 nC @ 10 V | ±30V | 5300 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT5020BVFRGMOSFET N-CH 500V 26A TO247 |
3527 | 11.01 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | - | 200mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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SCT2280KECSICFET N-CH 1200V 14A TO247 |
3606 | 11.02 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 14A (Tc) | 18V | 364mOhm @ 4A, 18V | 4V @ 1.4mA | 36 nC @ 18 V | +22V, -6V | 667 pF @ 800 V | - | 108W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTH4LN040N65S3HNTH4LN040N65S3H |
3452 | 11.10 |
ДобавитьРасследования |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 62A (Tc) | 10V | 40mOhm @ 31A, 10V | 4V @ 6.8mA | 132 nC @ 10 V | ±30V | 6513 pF @ 400 V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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