Transistors - FETs, MOSFETs - Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
Таблицы данных	SIHK045N60EF-T1GE3 E SERIES POWER MOSFET WITH FAST Vishay Siliconix	2010	10.96	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	EF	Active	N-Channel	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	52mOhm @ 17A, 10V	5V @ 250µA	105 nC @ 10 V	±30V	4685 pF @ 100 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	NTHL082N65S3F MOSFET N-CH 650V 40A TO247-3 onsemi	2433	1.00	- + Добавить Расследования	Bulk,Tube	SuperFET® III	Active	N-Channel	MOSFET (Metal Oxide)	650 V	40A (Tc)	10V	82mOhm @ 20A, 10V	5V @ 4mA	81 nC @ 10 V	±30V	3410 pF @ 400 V	-	313W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
Таблицы данных	IXTP120N20X4 MOSFET IXYS	2231	8.41	- + Добавить Расследования	Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	200 V	120A (Tc)	10V	9.5mOhm @ 60A, 10V	4.5V @ 250µA	108 nC @ 10 V	±20V	6100 pF @ 25 V	-	417W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
Таблицы данных	IPZA60R080P7XKSA1 MOSFET N-CH 600V 37A TO247-4 Infineon Technologies	3856	8.71	- + Добавить Расследования	Bulk,Tube	CoolMOS™ P7	Active	N-Channel	MOSFET (Metal Oxide)	600 V	37A (Tc)	10V	80mOhm @ 11.8A, 10V	4V @ 590µA	51 nC @ 10 V	±20V	2180 pF @ 400 V	-	129W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
	MSC180SMA120B MOSFET 1200V 25A TO-247 Microchip Technology	2442	8.95	- + Добавить Расследования	Tube	-	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	2SK1169-E N-CHANNEL POWER MOSFET Renesas Electronics America Inc	2585	7.46	- + Добавить Расследования	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
Таблицы данных	4AK15 N-CHANNEL POWER MOSFET Renesas Electronics America Inc	3964	7.49	- + Добавить Расследования	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
Таблицы данных	IXTH80N075L2 MOSFET N-CH 75V 80A TO247 IXYS	3359	9.03	- + Добавить Расследования	Tube	Linear L2™	Active	N-Channel	MOSFET (Metal Oxide)	75 V	80A (Tc)	10V	24mOhm @ 40A, 10V	4.5V @ 250µA	103 nC @ 10 V	±20V	3600 pF @ 25 V	-	357W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
	IRF150P221AKMA1 MOSFET N-CH 150V 186A TO247-3 Infineon Technologies	3041	9.03	- + Добавить Расследования	Tube	StrongIRFET™	Active	N-Channel	MOSFET (Metal Oxide)	150 V	186A (Tc)	10V	4.5mOhm @ 100A, 10V	4.6V @ 264µA	100 nC @ 10 V	±20V	6000 pF @ 75 V	-	3.8W (Ta), 341W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
	IPP60R065S7XKSA1 HIGH POWER_NEW PG-TO220-3 Infineon Technologies	3125	7.54	- + Добавить Расследования	Tube	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	FCH47N60-F133 MOSFET N-CH 600V 47A TO-247 onsemi	2503	9.10	- + Добавить Расследования	Tube	SuperFET® II	Active	N-Channel	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	70mOhm @ 23.5A, 10V	5V @ 250µA	270 nC @ 10 V	±30V	8000 F @ 25 V	-	417W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
Таблицы данных	STW42N60M2-EP MOSFET N-CH 600V 34A TO247 STMicroelectronics	3140	9.16	- + Добавить Расследования	Tube	MDmesh™ M2-EP	Active	N-Channel	MOSFET (Metal Oxide)	600 V	34A (Tc)	10V	87mOhm @ 17A, 10V	4.75V @ 250µA	55 nC @ 10 V	±25V	2370 pF @ 100 V	-	250W (Tc)	150°C (TJ)	Through Hole
Таблицы данных	IPDQ60R040S7XTMA1 HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies	2190	12.67	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	CoolMOS™	Active	N-Channel	MOSFET (Metal Oxide)	600 V	14A (Tc)	12V	40mOhm @ 13A, 12V	4.5V @ 790µA	83 nC @ 12 V	±20V	3127 pF @ 300 V	-	272W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	NTBG060N090SC1 MOSFET N-CH 900V 5.8/44A D2PAK-7 onsemi	3529	13.44	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	-	Active	N-Channel	MOSFET (Metal Oxide)	900 V	5.8A (Ta), 44A (Tc)	15V	84mOhm @ 20A, 15V	4.3V @ 5mA	88 nC @ 15 V	+19V, -10V	1800 pF @ 450 V	-	3.6W (Ta), 211W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
Таблицы данных	IXFQ72N20X3 MOSFET N-CH 200V 72A TO3P IXYS	3694	9.40	- + Добавить Расследования	Tube	HiPerFET™, Ultra X3	Active	N-Channel	MOSFET (Metal Oxide)	200 V	72A (Tc)	10V	20mOhm @ 36A, 10V	4.5V @ 1.5mA	55 nC @ 10 V	±20V	3780 pF @ 25 V	-	320W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
Таблицы данных	NTHL082N65S3HF MOSFET N-CH 650V 40A TO247-3 onsemi	3076	9.46	- + Добавить Расследования	Tube	FRFET®, SuperFET® III	Active	N-Channel	MOSFET (Metal Oxide)	650 V	40A (Tc)	-	82mOhm @ 20A, 10V	5V @ 1mA	79 nC @ 10 V	±30V	3330 pF @ 400 V	-	313W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
Таблицы данных	IRFP4568PBFXKMA1 TRENCH >=100V PG-TO247-3 Infineon Technologies	2791	9.47	- + Добавить Расследования	Tube	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	171A (Tc)	10V	5.9mOhm @ 103A, 10V	5V @ 250µA	227 nC @ 10 V	±30V	10470 pF @ 50 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
Таблицы данных	IXFH230N10T MOSFET N-CH 100V 230A TO247AD IXYS	2729	9.54	- + Добавить Расследования	Tube	HiPerFET™, Trench	Active	N-Channel	MOSFET (Metal Oxide)	100 V	230A (Tc)	10V	4.7mOhm @ 500mA, 10V	4.5V @ 1mA	250 nC @ 10 V	±20V	15300 pF @ 25 V	-	650W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
	IXFP26N65X2 IXFP26N65X2 IXYS	3272	9.73	- + Добавить Расследования	Tube	HiPerFET™, Ultra X2	Active	N-Channel	MOSFET (Metal Oxide)	650 V	26A (Tc)	10V	130mOhm @ 500mA, 10V	5V @ 2.5mA	45 nC @ 10 V	±30V	2450 pF @ 25 V	-	460W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
	IRF100P218AKMA1 MOSFET N-CH 100V 209A TO247AC Infineon Technologies	2173	9.82	- + Добавить Расследования	Tube	StrongIRFET™	Active	N-Channel	MOSFET (Metal Oxide)	100 V	209A (Tc)	6V, 10V	1.28mOhm @ 100A, 10V	3.8V @ 278µA	412 nC @ 10 V	±20V	24000 pF @ 50 V	-	3.8W (Ta), 556W (Tc)	-55°C ~ 175°C (TJ)	Through Hole

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