Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SIHP065N60E-BE3N-CHANNEL 600V |
2053 | 7.61 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 74 nC @ 10 V | ±30V | 2700 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDB0260N1007LMOSFET N-CH 100V 200A TO263-7 |
3426 | 6.56 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 2.6mOhm @ 27A, 10V | 4V @ 250µA | 118 nC @ 10 V | ±20V | 8545 pF @ 50 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STW23N85K5MOSFET N-CH 850V 19A TO247 |
2971 | 7.67 |
ДобавитьРасследования |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 19A (Tc) | 10V | 275mOhm @ 9.5A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±30V | 1650 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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G3R160MT12JSIC MOSFET N-CH 22A TO263-7 |
2578 | 7.69 |
ДобавитьРасследования |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 15V | 192mOhm @ 10A, 15V | 2.69V @ 5mA | 28 nC @ 15 V | ±15V | 730 pF @ 800 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDPF4D5N10CMOSFET N-CH 100V 128A TO220F |
2905 | 6.60 |
ДобавитьРасследования |
Bulk,Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 128A (Tc) | 10V | 4.5mOhm @ 100A, 10V | 4V @ 310µA | 68 nC @ 10 V | ±20V | 5065 pF @ 50 V | - | 2.4W (Ta), 37.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPA60R099P6XKSA1MOSFET N-CH 600V 37.9A TO220-FP |
3976 | 7.83 |
ДобавитьРасследования |
Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70 nC @ 10 V | ±20V | 3330 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW65R110CFD7XKSA1HIGH POWER_NEW |
2146 | 7.89 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 110mOhm @ 9.7A, 10V | 4.5V @ 480µA | 41 nC @ 10 V | ±20V | 1942 pF @ 400 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDH047AN08A0MOSFET N-CH 75V 15A TO247-3 |
2802 | 6.76 |
ДобавитьРасследования |
Bulk,Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 15A (Tc) | 6V, 10V | 4.7mOhm @ 80A, 10V | 4V @ 250µA | 138 nC @ 10 V | ±20V | 6600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTPF082N65S3FMOSFET N-CH 650V 40A TO220F |
3573 | 6.77 |
ДобавитьРасследования |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 40A (Tc) | 10V | 82mOhm @ 20A, 10V | 5V @ 4mA | 70 nC @ 10 V | ±30V | 3240 pF @ 400 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IMBG120R140M1HXTMA1SICFET N-CH 1.2KV 18A TO263 |
3460 | 12.55 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 18A (Tc) | - | 189mOhm @ 6A, 18V | 5.7V @ 2.5mA | 13.4 nC @ 18 V | +18V, -15V | 491 pF @ 800 V | Standard | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SQW44N65EF-GE3E SERIES POWER MOSFET WITH FAST |
2578 | 8.03 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 73mOhm @ 22A, 10V | 4V @ 250µA | 266 nC @ 10 V | ±30V | 5858 pF @ 100 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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LSIC1MO170E0750SICFET N-CH 1700V 750OHM TO247-3 |
2511 | 8.09 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 6.2A (Tc) | 20V | 1Ohm @ 2A, 20V | 4V @ 1mA | 13 nC @ 20 V | +22V, -6V | 200 pF @ 1000 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH230N075T2MOSFET N-CH 75V 230A TO247AD |
2821 | 8.11 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 230A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 250µA | 178 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IMBG65R072M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
2574 | 13.25 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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APT14F100BMOSFET N-CH 1000V 14A TO247 |
2407 | 8.13 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 980mOhm @ 7A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 3965 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPB65R041CFD7ATMA1HIGH POWER_NEW |
2311 | 13.77 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 41mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW65R090CFD7XKSA1HIGH POWER_NEW |
2335 | 8.47 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 90mOhm @ 12.5A, 10V | 4.5V @ 630µA | 53 nC @ 10 V | ±20V | 2513 pF @ 400 V | - | 127W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDPF2D3N10CMOSFET N-CH 100V 222A TO220F |
2743 | 7.20 |
ДобавитьРасследования |
Bulk,Tube,Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 222A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 4V @ 700µA | 152 nC @ 10 V | ±20V | 11180 pF @ 50 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF100P219AKMA1MOSFET N-CH 100V TO247AC |
2708 | 8.64 |
ДобавитьРасследования |
Tube | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 203A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 278µA | 210 nC @ 10 V | ±20V | 12020 pF @ 50 V | - | 3.8W (Ta), 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRFP4110MOSFET N-CH 100V 120A TO247AC |
3311 | 8.25 |
ДобавитьРасследования |
Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 9620 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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