Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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AUIRF3205ZSMOSFET N-CH 55V 75A D2PAK |
3476 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7Y7R2-60EXMOSFET N-CH 60V LFPAK56 |
3023 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | - | 10V | - | - | - | ±20V | - | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFS8407TRLMOSFET N-CH 40V 195A D2PAK |
2684 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.8mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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2SK3666-2-TB-EN-CHANNEL JUNCTION SILICON FET F |
2352 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
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BUK662R7-55CNOW NEXPERIA BUK662R7-55C - POWE |
3710 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRL7736M2TRMOSFET N-CH 40V 179A DIRECTFET |
3491 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 179A (Tc) | 4.5V, 10V | 3mOhm @ 67A, 10V | 2.5V @ 150µA | 78 nC @ 4.5 V | ±16V | 5055 pF @ 25 V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCP190N65FPOWER FIELD-EFFECT TRANSISTOR, 2 |
2328 | 1.00 |
ДобавитьРасследования |
Bulk | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.6A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 2mA | 78 nC @ 10 V | ±20V | 3225 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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BUK9Y104-100B,115TRANSISTOR >30MHZ |
3166 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14.8A (Tc) | 5V, 10V | 99mOhm @ 5A, 10V | 2.15V @ 1mA | 11 nC @ 5 V | ±15V | 1139 pF @ 25 V | - | 59W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSZ088N03MSGBSZ088N03 - 12V-300V N-CHANNEL P |
2847 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDBL9403-F085MOSFET N-CH 40V 240A 8HPSOF |
2736 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 0.9mOhm @ 80A, 10V | 4V @ 250µA | 188 nC @ 10 V | ±20V | 12000 pF @ 25 V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FQPF5P20MOSFET P-CH 200V 3.4A TO220F |
3141 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 3.4A (Tc) | 10V | 1.4Ohm @ 1.7A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 430 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPB180N03S4L-H0IPB180N03 - 20V-40V N-CHANNEL AU |
3497 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 180A (Tc) | 4.5V, 10V | 0.95mOhm @ 100A, 10V | 2.2V @ 200µA | 300 nC @ 10 V | ±16V | 23000 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDN327NSMALL SIGNAL FIELD-EFFECT TRANSI |
2061 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.8V, 4.5V | 70mOhm @ 2A, 4.5V | 1.5V @ 250µA | 6.3 nC @ 4.5 V | ±8V | 423 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF2804MOSFET N-CH 40V 195A TO220 |
3813 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDB070AN06A0POWER FIELD-EFFECT TRANSISTOR, 1 |
2881 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Ta), 80A (Tc) | 10V | 7mOhm @ 80A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK768R1-100E,118NOW NEXPERIA BUK768R1-100E - 100 |
2966 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 8.1mOhm @ 25A, 10V | 4V @ 1mA | 108 nC @ 10 V | ±20V | 7380 pF @ 25 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDP8N50NZPOWER FIELD-EFFECT TRANSISTOR, 8 |
2187 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±25V | 735 pF @ 25 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPD30N06S2L-23IPD30N06 - 55V-60V N-CHANNEL AUT |
2039 | 1.00 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 22A, 10V | 2V @ 50µA | 42 nC @ 10 V | ±20V | 1091 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCP850N80ZMOSFET N-CH 800V 8A TO220-3 |
3631 | 1.00 |
ДобавитьРасследования |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29 nC @ 10 V | ±20V | 1315 pF @ 100 V | - | 136W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPD50N03S2-07OPTLMOS N-CHANNEL POWER MOSFET |
2041 | 1.00 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 10V | 7.3mOhm @ 50A, 10V | 4V @ 85µA | 68 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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