Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRFU3410PBFMOSFET N-CH 100V 31A IPAK |
2723 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Tc) | 10V | 39mOhm @ 18A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 3W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDMC8015LPOWER FIELD-EFFECT TRANSISTOR, 7 |
3482 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 7A (Ta), 18A (Tc) | 4.5V, 10V | 26mOhm @ 7A, 10V | 3V @ 250µA | 19 nC @ 10 V | ±20V | 945 pF @ 20 V | - | 2.3W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMC86320POWER FIELD-EFFECT TRANSISTOR, 1 |
3238 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 10.7A (Ta), 22A (Tc) | 8V, 10V | 11.7mOhm @ 10.7A, 10V | 4.5V @ 250µA | 41 nC @ 10 V | ±20V | 2640 pF @ 40 V | - | 2.3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMC8327LPOWER FIELD-EFFECT TRANSISTOR, 1 |
3745 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 12A (Ta), 14A (Tc) | 4.5V, 10V | 9.7mOhm @ 12A, 10V | 3V @ 250µA | 26 nC @ 10 V | ±20V | 1850 pF @ 20 V | - | 2.3W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQB8P10TMPOWER FIELD-EFFECT TRANSISTOR, 8 |
3013 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Tc) | 10V | 530mOhm @ 4A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±30V | 470 pF @ 25 V | - | 3.75W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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DI050N04PTMOSFET, 40V, 50A, 37W |
3830 | 1.25 |
ДобавитьРасследования |
Tape & Reel (TR),Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 6.5mOhm @ 10A, 10V | 2.5V @ 250µA | 59 nC @ 10 V | ±20V | 3255 pF @ 25 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS9435ASMALL SIGNAL FIELD-EFFECT TRANSI |
2112 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.3A (Ta) | 4.5V, 10V | 50mOhm @ 5.3A, 10V | 3V @ 250µA | 14 nC @ 10 V | ±25V | 528 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS7558SMOSFET N-CH 25V 32A/49A 8PQFN |
3069 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 49A (Tc) | 4.5V, 10V | 1.25mOhm @ 32A, 10V | 3V @ 1mA | 119 nC @ 10 V | ±20V | 7770 pF @ 13 V | - | 2.5W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQP11P06POWER FIELD-EFFECT TRANSISTOR, 1 |
3009 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 11.4A (Tc) | 10V | 175mOhm @ 5.7A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 550 pF @ 25 V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRLR7833TRPBFIRLR7833 - 12V-300V N-CHANNEL PO |
3840 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4010 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLS4030PBFMOSFET N-CH 100V 180A D2PAK |
2170 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130 nC @ 4.5 V | ±16V | 11360 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP220N25NFDMOSFET N-CH 250V 61A TO220-3 |
3331 | 1.00 |
ДобавитьРасследования |
Bulk | OptiMOS™FD | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 61A (Tc) | - | 22mOhm @ 61A, 10V | 4V @ 270µA | 86 nC @ 10 V | ±20V | 7076 pF @ 125 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF7404TRPBFMOSFET P-CH 20V 6.7A 8SO |
2146 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.7A (Ta) | 2.7V, 4.5V | 40mOhm @ 3.2A, 4.5V | 700mV @ 250µA (Min) | 50 nC @ 4.5 V | ±12V | 1500 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7749L2TRPBFIRF7749 - 12V-300V N-CHANNEL POW |
2734 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 33A (Ta), 375A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 12320 pF @ 25 V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP60R380C6POWER FIELD-EFFECT TRANSISTOR, 1 |
3235 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPP65R380E6IPP65R380E6 - 650V-700V COOLMOS |
3972 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDPF20N50FTPOWER FIELD-EFFECT TRANSISTOR, 2 |
2153 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 260mOhm @ 10A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 3390 pF @ 25 V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDS2672POWER FIELD-EFFECT TRANSISTOR, 3 |
2852 | 1.00 |
ДобавитьРасследования |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.9A (Ta) | 6V, 10V | 70mOhm @ 3.9A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 2535 pF @ 100 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS4620PBFMOSFET N-CH 200V 24A D2PAK |
3800 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 77.5mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFSL7534PBFMOSFET N-CH 60V 195A TO262 |
2443 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.7V @ 250µA | 279 nC @ 10 V | ±20V | 10034 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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