Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRL60HS118IRL60HS118 - 12V-300V N-CHANNEL |
3241 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 18.5A (Tc) | 4.5V, 10V | 17mOhm @ 11A, 10V | 2.3V @ 10µA | 8 nC @ 4.5 V | ±20V | 660 pF @ 25 V | - | 11.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FQP3P50POWER FIELD-EFFECT TRANSISTOR, 2 |
2766 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 2.7A (Tc) | 10V | 4.9Ohm @ 1.35A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 660 pF @ 25 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFP4321PBFIRFP4321 - 12V-300V N-CHANNEL PO |
2108 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 78A (Tc) | 10V | 15.5mOhm @ 33A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4460 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPP062NE7N3GIPP062NE7 - 12V-300V N-CHANNEL P |
2240 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRFP4227PBFIRFP4227 - 12V-300V N-CHANNEL PO |
2875 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 65A (Tc) | 10V | 25mOhm @ 46A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 4600 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDPF18N20FTPOWER FIELD-EFFECT TRANSISTOR, 1 |
3654 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 140mOhm @ 9A, 10V | 5V @ 250µA | 26 nC @ 10 V | ±30V | 1180 pF @ 25 V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SPD04P10PGSPD04P10 - 20V-250V P-CHANNEL PO |
3646 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDP3632POWER FIELD-EFFECT TRANSISTOR, 1 |
3268 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Ta), 80A (Tc) | 6V, 10V | 9mOhm @ 80A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPD040N03LGOPTLMOS N-CHANNEL POWER MOSFET |
3401 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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FQB8N90CTMMOSFET N-CH 900V 6.3A D2PAK |
3200 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.3A (Tc) | 10V | 1.9Ohm @ 3.15A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 2080 pF @ 25 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS8896POWER FIELD-EFFECT TRANSISTOR, 1 |
3800 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.5V @ 250µA | 67 nC @ 10 V | ±20V | 2525 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7420PBFMOSFET P-CH 12V 11.5A 8SO |
3399 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 11.5A (Tc) | 1.8V, 4.5V | 14mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38 nC @ 4.5 V | ±8V | 3529 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP50R380CEPOWER FIELD-EFFECT TRANSISTOR, 5 |
3595 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IPP50R190CEPOWER FIELD-EFFECT TRANSISTOR, 5 |
3778 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IRF7468PBFMOSFET N-CH 40V 9.4A 8SO |
2106 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 9.4A (Ta) | 4.5V, 10V | 15.5mOhm @ 9.4A, 10V | 2V @ 250µA | 34 nC @ 4.5 V | ±12V | 2460 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFP7530PBFIRFP7530 - 12V-300V N-CHANNEL PO |
3197 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411 nC @ 10 V | ±20V | 13703 pF @ 25 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFR4615PBFMOSFET N-CH 150V 33A DPAK |
3667 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 26 nC @ 10 V | ±20V | 1750 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS7730PBFMOSFET N-CH 75V 195A D2PAK |
2745 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407 nC @ 10 V | ±20V | 13660 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMA8884MOSFET N-CH 30V 6.5/8A 6MICROFET |
2723 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta), 8A (Tc) | 4.5V, 10V | 23mOhm @ 6.5A, 10V | 3V @ 250µA | 7.5 nC @ 10 V | ±20V | 450 pF @ 15 V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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FQA9P25POWER FIELD-EFFECT TRANSISTOR, 1 |
3378 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 250 V | 10.5A (Tc) | 10V | 620mOhm @ 5.25A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±30V | 1180 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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