Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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FDS9431AP-CHANNEL 2.5V SPECIFIED MOSFET |
3344 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | 2.5V, 4.5V | 130mOhm @ 3.5A, 4.5V | 1V @ 250µA | 8.5 nC @ 4.5 V | ±8V | 405 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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MIC94030YM4TINYFET P-CHANNEL MOSFET |
2795 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FDT3612POWER FIELD-EFFECT TRANSISTOR, 3 |
3942 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3.7A (Ta) | 6V, 10V | 120mOhm @ 3.7A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 632 pF @ 50 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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FQP20N06LPOWER FIELD-EFFECT TRANSISTOR, 2 |
3327 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 21A (Tc) | 5V, 10V | 55mOhm @ 10.5A, 10V | 2.5V @ 250µA | 13 nC @ 5 V | ±20V | 630 pF @ 25 V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NX2301P,21520 V, 2 A P-CHANNEL TRENCH MOSFE |
2808 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 2.5V, 4.5V | 120mOhm @ 1A, 4.5V | 1.1V @ 250µA | 6 nC @ 4.5 V | ±8V | 380 pF @ 6 V | - | 400mW (Ta), 2.8W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NP60N055VUK-E1-AYMOSFET N-CH 55V 60A TO252-3 |
2061 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 60A (Tc) | 10V | 5.5mOhm @ 30A, 10V | 4V @ 253µA | 63 nC @ 10 V | ±20V | 3750 pF @ 25 V | - | 1.2W (Ta), 105W (Tc) | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NX138BKRNX138BK - 60 V, SINGLE N-CHANNEL |
3879 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 265mA (Ta) | 2.5V, 10V | 3.5Ohm @ 200mA, 10V | 1.5V @ 250µA | 0.49 nC @ 4.5 V | ±20V | 20.2 pF @ 30 V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLML0060TRPBFIRLML0060 - 20V-100V N-CHANNEL S |
3212 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2.7A (Ta) | 4.5V, 10V | 92mOhm @ 2.7A, 10V | 2.5V @ 25µA | 2.5 nC @ 4.5 V | ±16V | 290 pF @ 25 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN025-80YLXPSMN025-80YL - N-CHANNEL 80V, LO |
2421 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 37A (Tc) | 5V, 10V | 25mOhm @ 10A, 10V | 2.1V @ 1mA | 17.1 nC @ 5 V | ±20V | 2703 pF @ 25 V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLZ24NSPBFMOSFET N-CH 55V 18A D2PAK |
2472 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP60R190C6POWER FIELD-EFFECT TRANSISTOR, 2 |
3096 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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PMPB48EP,115MOSFET P-CH 30V 4.7A DFN2020MD-6 |
2065 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.7A (Ta) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 2.5V @ 250µA | 26 nC @ 10 V | ±20V | 860 pF @ 15 V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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MIC94030YM4TRMOSFET P-CH 16V 1A SOT143 |
3038 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 16 V | 1A (Ta) | - | 450mOhm @ 100mA, 10V | 1.4V @ 250µA | - | ±16V | 100 pF @ 12 V | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS86320POWER FIELD-EFFECT TRANSISTOR, 1 |
2992 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 10.5A (Ta), 22A (Tc) | 8V, 10V | 11.7mOhm @ 10.5A, 10V | 4.5V @ 250µA | 41 nC @ 10 V | ±20V | 2640 pF @ 40 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSC118N10NSGBSC118N10 - 12V-300V N-CHANNEL P |
3846 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDN308PSMALL SIGNAL FIELD-EFFECT TRANSI |
2255 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.5A (Ta) | 2.5V, 4.5V | 125mOhm @ 1.5A, 4.5V | 1.5V @ 250µA | 5.4 nC @ 4.5 V | ±12V | 341 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMC8588DCPOWER FIELD-EFFECT TRANSISTOR, 1 |
3736 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 17A (Ta), 40A (Tc) | 4.5V, 10V | 5mOhm @ 18A, 10V | 1.8V @ 250µA | 12 nC @ 4.5 V | ±12V | 1695 pF @ 13 V | - | 3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PMPB13XNE,115MOSFET N-CH 30V 8A DFN2020MD-6 |
3916 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Ta) | 1.8V, 4.5V | 16mOhm @ 8A, 4.5V | 900mV @ 250µA | 36 nC @ 4.5 V | ±12V | 2195 pF @ 15 V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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PMPB15XN,115MOSFET N-CH 20V 7.3A DFN2020MD-6 |
2374 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 7.3A (Ta) | 1.8V, 4.5V | 21mOhm @ 7.3A, 4.5V | 900mV @ 250µA | 20.2 nC @ 4.5 V | ±12V | 1240 pF @ 10 V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SPU02N60S5SPU02N60 - 600V COOLMOS N-CHANNE |
2120 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 5.5V @ 80µA | 9.5 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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