Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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AUIRL7732S2TRMOSFET N-CH 40V 14A DIRECTFET SC |
3044 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta) | 4.5V, 10V | 6.6mOhm @ 35A, 10V | 2.5V @ 50µA | 33 nC @ 4.5 V | ±16V | 2020 pF @ 25 V | - | 2.2W (Ta), 41W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP65R280C6POWER FIELD-EFFECT TRANSISTOR, 6 |
2669 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IPP80R900P7IPP80R900 - 800V COOLMOS N-CHANN |
2213 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IPB180N03S4L-01IPB180N03 - 20V-40V N-CHANNEL AU |
3056 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 180A (Tc) | 4.5V, 10V | 1.05mOhm @ 100A, 10V | 2.2V @ 140µA | 239 nC @ 10 V | ±16V | 17600 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFB3006GPBFMOSFET N-CH 60V 195A TO220AB |
2644 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8970 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R099C7MOSFET N-CH 600V 22A TO247 |
2051 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | - | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1819 pF @ 400 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R199CP16A, 600V, 0.199OHM, N-CHANNEL M |
2324 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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BUK7Y29-40EXMOSFET N-CH 40V 26A LFPAK56 |
3466 | 1.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Tc) | 10V | 29mOhm @ 5A, 10V | 4V @ 1mA | 7.9 nC @ 10 V | ±20V | 492 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFS3004MOSFET N-CH 40V 195A D2PAK-3 |
2357 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7Y28-75B,115TRANSISTOR >30MHZ |
3386 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 35.5A (Tc) | 10V | 28mOhm @ 15A, 10V | 4V @ 1mA | 21.2 nC @ 10 V | ±20V | 1417 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSS123LSMALL SIGNAL FIELD-EFFECT TRANSI |
3860 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 2V @ 1mA | 2.5 nC @ 10 V | ±20V | 21.5 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SPD18P06PGSPD18P06 - 20V-250V P-CHANNEL PO |
3142 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
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SPW52N50C3XKSPW52N50 - 500V COOLMOS N-CHANNE |
2131 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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BUK98150-55A/CU,135NOW NEXPERIA BUK98150-55A - POWE |
3230 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDB52N20TMPOWER FIELD-EFFECT TRANSISTOR, 5 |
3757 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 52A (Tc) | 10V | 49mOhm @ 26A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 2900 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR7440TRPBFIRFR7440 - 12V-300V N-CHANNEL PO |
3094 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134 nC @ 10 V | ±20V | 4610 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS7434-7PPBFMOSFET N-CH 40V 240A D2PAK |
2198 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 6V, 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315 nC @ 10 V | ±20V | 10250 pF @ 25 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFSL7434PBFMOSFET N-CH 40V 195A TO262 |
3710 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324 nC @ 10 V | ±20V | 10820 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFZ34NSTRRPBFMOSFET N-CH 55V 29A D2PAK |
3954 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS86267PSMALL SIGNAL FIELD-EFFECT TRANSI |
2641 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 2.2A (Ta) | 6V, 10V | 255mOhm @ 2.2A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±25V | 1130 pF @ 75 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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