Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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BUK9615-100E,118MOSFET N-CH 100V 66A D2PAK |
3312 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 66A (Tc) | 5V, 10V | 14mOhm @ 15A, 10V | 2.1V @ 1mA | 60 nC @ 5 V | ±10V | 6813 pF @ 25 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDA38N30POWER FIELD-EFFECT TRANSISTOR, 3 |
2436 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 38A (Tc) | 10V | 85mOhm @ 19A, 10V | 5V @ 250µA | 60 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFB3207ZPBFIRFB3207 - 12V-300V N-CHANNEL PO |
2246 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6920 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFB4410ZGPBFIRFB4410 - 12V-300V N-CHANNEL PO |
3919 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4820 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FQU1N80TUMOSFET N-CH 800V 1A I-PAK |
2858 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1A (Tc) | 10V | 20Ohm @ 500mA, 10V | 5V @ 250µA | 7.2 nC @ 10 V | ±30V | 195 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFS4115-7PPBFMOSFET N-CH 150V 105A D2PAK |
2533 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 5320 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FQT3P20TF_SB821001-ELEMENT, P-CHANNEL POWER MOSFE |
2089 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 670mA (Tc) | 10V | 2.7Ohm @ 335mA, 10V | 5V @ 250µA | 8 nC @ 10 V | ±30V | 250 pF @ 25 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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2N7002CK2N7002 - SMALL SIGNAL FIELD-EFFE |
2848 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRFB31N20DPBFMOSFET N-CH 200V 31A TO220AB |
3972 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 31A (Tc) | 10V | 82mOhm @ 18A, 10V | 5.5V @ 250µA | 107 nC @ 10 V | ±30V | 2370 pF @ 25 V | - | 3.1W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFB4321PBFIRFB4321 - 12V-300V N-CHANNEL PO |
3315 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 85A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4460 pF @ 50 V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDB045AN08A0POWER FIELD-EFFECT TRANSISTOR, 1 |
2660 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 19A (Ta), 90A (Tc) | 6V, 10V | 4.5mOhm @ 80A, 10V | 4V @ 250µA | 138 nC @ 10 V | ±20V | 6600 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDPF17N60NTMOSFET N-CH 600V 17A TO220F |
3357 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 340mOhm @ 8.5A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 3040 pF @ 25 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFH3707TRPBFIRFH3707 - 12V-300V N-CHANNEL PO |
2802 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 29A (Tc) | 4.5V, 10V | 12.4mOhm @ 12A, 10V | 2.35V @ 25µA | 8.1 nC @ 4.5 V | ±20V | 755 pF @ 15 V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR3711ZTRPBFIRFR3711 - 12V-300V N-CHANNEL PO |
3940 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.45V @ 250µA | 27 nC @ 4.5 V | ±20V | 2160 pF @ 10 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMA530PZPOWER FIELD-EFFECT TRANSISTOR, 6 |
3295 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 6.8A (Ta) | 4.5V, 10V | 35mOhm @ 6.8A, 10V | 3V @ 250µA | 24 nC @ 10 V | ±25V | 1070 pF @ 15 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMC8588POWER FIELD-EFFECT TRANSISTOR, 1 |
2656 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 16.5A (Ta), 40A (Tc) | 4.5V, 10V | 5mOhm @ 17A, 10V | 1.8V @ 250µA | 12 nC @ 4.5 V | ±12V | 1228 pF @ 13 V | - | 2.4W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDME910PZTSMALL SIGNAL FIELD-EFFECT TRANSI |
3394 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Ta) | 1.8V, 4.5V | 24mOhm @ 8A, 4.5V | 1.5V @ 250µA | 21 nC @ 4.5 V | ±8V | 2110 pF @ 10 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF14128A, 80V, 0.077OHM, N-CHANNEL PO |
3003 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDD6N50TMMOSFET N-CH 500V 6A DPAK |
2831 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 5V @ 250µA | 16.6 nC @ 10 V | ±30V | 9400 pF @ 25 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF14225A, 100V, 0.1OHM, N-CHANNEL POW |
3147 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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