Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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IRFSL3206PBFMOSFET N-CH 60V 120A TO262 |
2800 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6540 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDMC668314A, 20V, 0.0084OHM, P-CHANNEL P |
2208 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Ta), 18A (Tc) | 1.8V, 5V | 8.3mOhm @ 12A, 4.5V | 1V @ 250µA | 114 nC @ 4.5 V | ±8V | 7835 pF @ 10 V | - | 2.3W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQB19N20LTMPOWER FIELD-EFFECT TRANSISTOR, 2 |
2641 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 21A (Tc) | 5V, 10V | 140mOhm @ 10.5A, 10V | 2V @ 250µA | 35 nC @ 5 V | ±20V | 2200 pF @ 25 V | - | 3.13W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMC2610N-CHANNEL ULTRAFET TRENCH MOSFET |
2580 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.2A (Ta), 9.5A (Tc) | 6V, 10V | 200mOhm @ 2.2A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 960 pF @ 100 V | - | 2.1W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF40H210MOSFET N-CH 40V 100A 8PQFN |
2975 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.7V @ 150µA | 152 nC @ 10 V | ±20V | 5406 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMC2523PPOWER FIELD-EFFECT TRANSISTOR, 3 |
3137 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 3A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 5V @ 250µA | 9 nC @ 10 V | ±30V | 270 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLR8259TRPBFIRLR8259 - 12V-300V N-CHANNEL PO |
2759 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 57A (Tc) | 4.5V, 10V | 8.7mOhm @ 21A, 10V | 2.35V @ 25µA | 10 nC @ 4.5 V | ±20V | 900 pF @ 13 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPA60R125CPPOWER FIELD-EFFECT TRANSISTOR, 2 |
2386 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPA65R280C6POWER FIELD-EFFECT TRANSISTOR, 6 |
3650 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRLR2703PBFMOSFET N-CH 30V 23A DPAK |
3094 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Tc) | 4V, 10V | 45mOhm @ 14A, 10V | 1V @ 250µA | 15 nC @ 4.5 V | ±16V | 450 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP80R1K4P7IPP80R1K4 - 800V COOLMOS N-CHANN |
2517 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRLR8256TRPBFIRLR8256 - 12V-300V N-CHANNEL PO |
3307 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 81A (Tc) | 4.5V, 10V | 5.7mOhm @ 25A, 10V | 2.35V @ 25µA | 15 nC @ 4.5 V | ±20V | 1470 pF @ 13 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLS3036PBFMOSFET N-CH 60V 195A D2PAK |
2981 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11210 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN009-100P,127NOW NEXPERIA PSMN009-100P - 75A |
2984 | 0.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 8.8mOhm @ 25A, 10V | 4V @ 1mA | 156 nC @ 10 V | ±20V | 8250 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | |
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Таблицы данных |
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PSMN014-80YLXPSMN014-80YL - N-CHANNEL 80V, 14 |
3978 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 62A (Tc) | 5V, 10V | 14mOhm @ 15A, 10V | 2.1V @ 1mA | 28.9 nC @ 5 V | ±20V | 4640 pF @ 25 V | - | 147W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN2R1-40PLQMOSFET N-CH 40V 150A TO220AB |
2939 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 10V | 2.2mOhm @ 25A, 10V | 2.1V @ 1mA | 87.8 nC @ 5 V | ±20V | 9584 pF @ 25 V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FQP20N06POWER FIELD-EFFECT TRANSISTOR, 2 |
2759 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 10V | 60mOhm @ 10A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±25V | 590 pF @ 25 V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRLR2705TRPBFIRLR2705 - 12V-300V N-CHANNEL PO |
2981 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | 2V @ 250µA | 25 nC @ 5 V | ±16V | 880 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLR3110ZTRPBFIRLR3110 - 12V-300V N-CHANNEL PO |
2625 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48 nC @ 4.5 V | ±16V | 3980 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PSMN004-60B,118MOSFET N-CH 60V 75A D2PAK |
2184 | 1.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 3.6mOhm @ 25A, 10V | 4V @ 1mA | 168 nC @ 10 V | ±20V | 8300 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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