Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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IPB108N15N3GIPB108N15 - 12V-300V N-CHANNEL P |
2163 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRF1405ZSTRLMOSFET N-CH 55V 150A D2PAK |
2212 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 150A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±20V | 4780 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FQI7N80TUMOSFET N-CH 800V 6.6A I2PAK |
2569 | 1.00 |
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Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.6A (Tc) | 10V | 1.5Ohm @ 3.3A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1850 pF @ 25 V | - | 3.13W (Ta), 167W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R160C623.8A, 600V, 0.16OHM, N-CHANNEL |
2211 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDMS3662POWER FIELD-EFFECT TRANSISTOR, 8 |
3349 | 1.00 |
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.9A (Ta), 39A (Tc) | 10V | 14.8mOhm @ 8.9A, 10V | 4.5V @ 250µA | 75 nC @ 10 V | ±20V | 4620 pF @ 50 V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDB13AN06A0POWER FIELD-EFFECT TRANSISTOR, 6 |
2111 | 1.00 |
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 10.9A (Ta), 62A (Tc) | 6V, 10V | 13.5mOhm @ 62A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 1350 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRL3713PBFMOSFET N-CH 30V 260A TO220AB |
2510 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 260A (Tc) | 4.5V, 10V | 3mOhm @ 38A, 10V | 2.5V @ 250µA | 110 nC @ 4.5 V | ±20V | 5890 pF @ 15 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDD5N50NZFTMPOWER FIELD-EFFECT TRANSISTOR, 3 |
2214 | 1.00 |
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Bulk | UniFET-II™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.7A (Tc) | 10V | 1.75Ohm @ 1.85A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±25V | 485 pF @ 25 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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HUF76407D3STN-CHANNEL LOGIC LEVEL ULTRAFET P |
3540 | 1.00 |
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Bulk | UltraFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 4.5V, 10V | 92mOhm @ 13A, 10V | 3V @ 250µA | 11.3 nC @ 10 V | ±16V | 350 pF @ 25 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SP000687556IPP60R099C6XKSA1 - COOLMOS N-CHA |
3057 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRF7424TRPBFIRF7424 - 20V-250V P-CHANNEL POW |
2667 | 1.00 |
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Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 13.5mOhm @ 11A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 4030 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP50R199CPIPP50R199 - 500V COOLMOS N-CHANN |
2163 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDH210N08MOSFET N-CH 75V TO247-3 |
2814 | 1.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | - | 10V | - | - | - | ±20V | - | - | 462W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPP65R380C6POWER FIELD-EFFECT TRANSISTOR, 1 |
3581 | 1.00 |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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HUF75639S3STNL56A, 100V, 0.025OHM, N-CHANNEL P |
3463 | 1.00 |
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Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FQP13N50C-GN-CHANNEL QFET MOSFET 500V, 13A |
2573 | 0.00 |
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Tube | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 480mOhm @ 6.5A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±30V | 2055 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | |
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Таблицы данных |
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IPB080N06N GMOSFET N-CH 60V 80A TO263-3 |
3843 | 1.16 |
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 7.7mOhm @ 80A, 10V | 4V @ 150µA | 93 nC @ 10 V | ±20V | 3500 pF @ 30 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SP000660618IPI60R190C6XKSA1 - COOLMOS N-CHA |
2473 | 1.00 |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63 nC @ 10 V | ±20V | 1400 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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RFP50N06_F1021-ELEMENT, N-CHANNEL POWER MOSFE |
2649 | 0.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 22mOhm @ 50A, 10V | 4V @ 250µA | 150 nC @ 20 V | ±20V | 2020 pF @ 25 V | - | 131W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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PMDPB70XPENOW NEXPERIA PMDPB70XPE - SMALL |
3826 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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