Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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FDPF035N06B_F152MOSFET N-CH 60V 88A TO220F-3 |
2650 | 0.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 88A (Tc) | - | 3.5mOhm @ 88A, 10V | 4V @ 250µA | 99 nC @ 10 V | ±20V | 8030 pF @ 30 V | - | 46.3W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRFS6535MOSFET N-CH 300V 19A D2PAK |
3506 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 19A (Tc) | 10V | 185mOhm @ 11A, 10V | 5V @ 150µA | 57 nC @ 10 V | ±20V | 2340 pF @ 25 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BBS3002-DL-EMOSFET P-CH 60V 100A SMP-FD |
3580 | 1.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Ta) | 4V, 10V | 5.8mOhm @ 50A, 10V | - | 280 nC @ 10 V | ±20V | 13200 pF @ 20 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI4435DYMOSFET P-CH 30V 8A 8SO |
3384 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | 1V @ 250µA | 60 nC @ 10 V | ±20V | 2320 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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2V7002LT1GSMALL SIGNAL FIELD-EFFECT TRANSI |
2177 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50 pF @ 25 V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SP000685844IPP60R125C6XKSA1 - COOLMOS N-CHA |
2735 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRFR3410TRPBFIRFR3410 - 12V-300V N-CHANNEL PO |
3144 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Tc) | 10V | 39mOhm @ 18A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 3W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS3006TRL7PPIRFS3006 - 12V-300V N-CHANNEL PO |
3516 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 10V | 2.1mOhm @ 168A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8850 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FQA65N20POWER FIELD-EFFECT TRANSISTOR, 6 |
2148 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 65A (Tc) | 10V | 32mOhm @ 32.5A, 10V | 5V @ 250µA | 200 nC @ 10 V | ±30V | 7900 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFSL7530PBFMOSFET N-CH 60V 195A TO262 |
2191 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411 nC @ 10 V | ±20V | 13703 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FQB4N80TMPOWER FIELD-EFFECT TRANSISTOR, 3 |
2512 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.9A (Tc) | 10V | 3.6Ohm @ 1.95A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 880 pF @ 25 V | - | 3.13W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS6699SSMALL SIGNAL FIELD-EFFECT TRANSI |
3988 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta) | 4.5V, 10V | 3.6mOhm @ 21A, 10V | 3V @ 1mA | 91 nC @ 10 V | ±20V | 3610 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPI041N12N3GIPI041N12 - 12V-300V N-CHANNEL P |
2402 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRFS3107-7TRLMOSFET N-CH 75V 240A D2PAK |
2046 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 240A (Tc) | - | 2.6mOhm @ 160A, 10V | 4V @ 250µA | 240 nC @ 10 V | - | 9200 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP60R125C6POWER FIELD-EFFECT TRANSISTOR, 3 |
3024 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BSS84AKWNOW NEXPERIA BSS84AKW - SMALL SI |
2983 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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PMZB350UPE,315NOW NEXPERIA PMZB350UPE - SMALL |
3845 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 1A (Ta) | 1.8V, 4.5V | 450mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.9 nC @ 4.5 V | ±8V | 127 pF @ 10 V | - | 360mW (Ta), 3.125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDM3622POWER FIELD-EFFECT TRANSISTOR, 4 |
2273 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.4A (Ta) | 6V, 10V | 60mOhm @ 4.4A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 1090 pF @ 25 V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF7799L2TRMOSFET N-CH 250V 375A DIRECTFT |
3830 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 375A (Tc) | 10V | 38mOhm @ 21A, 10V | 5V @ 250µA | 165 nC @ 10 V | ±30V | 6714 pF @ 25 V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPI075N15N3GOPTLMOS N-CHANNEL POWER MOSFET |
2332 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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