Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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AUIRFS3004-7TRLMOSFET N-CH 40V 240A D2PAK |
2168 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.25mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9130 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMC8296MOSFET N-CH 30V 12A/18A 8MLP |
3845 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 18A (Tc) | 4.5V, 10V | 8mOhm @ 12A, 10V | 3V @ 250µA | 23 nC @ 10 V | ±20V | 1385 pF @ 15 V | - | 2.3W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQD20N06TMPOWER FIELD-EFFECT TRANSISTOR, 1 |
2722 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 16.8A (Tc) | 10V | 63mOhm @ 8.4A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±25V | 590 pF @ 25 V | - | 2.5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFSL4010-313TRLMOSFET N-CH 100V 180A TO262 |
2074 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215 nC @ 10 V | ±8V | 9575 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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AUIRFS8409-7PAUIRFS8409 - 20V-40V N-CHANNEL A |
2206 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 0.75mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 13975 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFSL8405MOSFET N-CH 40V 120A TO262 |
2806 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.9V @ 100µA | 161 nC @ 10 V | ±20V | 5193 pF @ 25 V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPA60R160P6POWER FIELD-EFFECT TRANSISTOR |
3411 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23.8A (Tc) | 10V | 160mOhm @ 9A, 10V | 4.5V @ 750µA | 44 nC @ 10 V | ±20V | 2080 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRLR2908MOSFET N-CH 80V 30A DPAK |
2637 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 30A (Tc) | 4.5V, 10V | 28mOhm @ 23A, 10V | 2.5V @ 250µA | 33 nC @ 4.5 V | ±16V | 1890 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BUK7607-55B,118NOW NEXPERIA BUK7607-55B - 119A |
2951 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 7.1mOhm @ 25A, 10V | 4V @ 1mA | 53 nC @ 10 V | ±20V | 3760 pF @ 25 V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | |
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Таблицы данных |
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FQP8P10POWER FIELD-EFFECT TRANSISTOR, 8 |
2844 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Tc) | 10V | 530mOhm @ 4A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±30V | 470 pF @ 25 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPA90R800C3MOSFET N-CH 900V 6.9A TO220 |
3367 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.9A (Tc) | - | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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BUK7613-75B,118MOSFET N-CH 75V 75A D2PAK |
2306 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 13mOhm @ 25A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±20V | 2644 pF @ 25 V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK762R4-60E,118MOSFET N-CH 60V 120A D2PAK |
3426 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 25A, 10V | 4V @ 1mA | 158 nC @ 10 V | ±20V | 11180 pF @ 25 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS0309ASPOWER FIELD-EFFECT TRANSISTOR, 2 |
2213 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 49A (Tc) | 4.5V, 10V | 3.5mOhm @ 21A, 10V | 3V @ 1mA | 47 nC @ 10 V | ±20V | 3000 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDU3N40TUPOWER FIELD-EFFECT TRANSISTOR, 2 |
2786 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 5V @ 250µA | 6 nC @ 10 V | ±30V | 225 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDB3672-F085MOSFET N-CH 100V 7.2A/44A TO263 |
3290 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.2A (Ta), 44A (Tc) | 6V, 10V | 28mOhm @ 44A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±20V | 1710 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BSC019N04NSGBSC019N04 - 12V-300V N-CHANNEL P |
2092 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDMS8020MOSFET N-CH 30V 26A/42A 8PQFN |
2592 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 26A (Ta), 42A (Tc) | 4.5V, 10V | 2.5mOhm @ 26A, 10V | 3V @ 250µA | 61 nC @ 10 V | ±20V | 3800 pF @ 15 V | - | 2.5W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSC050N03LSGXTBSC050N03 - 12V-300V N-CHANNEL P |
2683 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRF1010EZSTRLMOSFET N-CH 60V 75A D2PAK |
3639 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±20V | 2810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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