Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRFS7734TRL7PPIRFS7734 - 12V-300V N-CHANNEL PO |
2848 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 197A (Tc) | 6V, 10V | 3.05mOhm @ 100A, 10V | 3.7V @ 150µA | 270 nC @ 10 V | ±20V | 10130 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS6670ASSMALL SIGNAL FIELD-EFFECT TRANSI |
2167 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13.5A (Ta) | 4.5V, 10V | 9mOhm @ 13.5A, 10V | 3V @ 1mA | 38 nC @ 10 V | ±20V | 1540 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK9840-55/CUXMOSFET N-CH 55V 5A/10.7A SOT223 |
2293 | 1.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 5A (Ta), 10.7A (Tc) | 5V | 40mOhm @ 5A, 5V | 2V @ 1mA | - | ±10V | 1400 pF @ 25 V | - | 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS6690ASSMALL SIGNAL FIELD-EFFECT TRANSI |
2964 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 12mOhm @ 10A, 10V | 3V @ 1mA | 23 nC @ 10 V | ±20V | 910 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQT7N10LTFPOWER FIELD-EFFECT TRANSISTOR, 1 |
3943 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.7A (Tc) | 5V, 10V | 350mOhm @ 850mA, 10V | 2V @ 250µA | 6 nC @ 5 V | ±20V | 290 pF @ 25 V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDC658APSMALL SIGNAL FIELD-EFFECT TRANSI |
2820 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4.5V, 10V | 50mOhm @ 4A, 10V | 3V @ 250µA | 8.1 nC @ 5 V | ±25V | 470 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS9400AMOSFET P-CH 30V 3.4A 8SOIC |
2273 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.4A (Ta) | 4.5V, 10V | 130mOhm @ 1A, 10V | 3V @ 250µA | 3.5 nC @ 5 V | ±25V | 205 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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2N6763POWER FIELD-EFFECT TRANSISTOR, N |
2903 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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2N7002BKM315NOW NEXPERIA 2N7002BKM - SMALL S |
3697 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 450mA (Ta) | 10V | 1.6Ohm @ 500mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 50 pF @ 10 V | - | 360mW (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDB0250N807LMOSFET N-CH 80V 240A TO263-7 |
3777 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 240A (Tc) | 8V, 10V | 2.2mOhm @ 30A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 15400 pF @ 40 V | - | 3.8W (Ta), 214W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRL2203NSPBFMOSFET N-CH 30V 116A D2PAK |
3792 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 3V @ 250µA | 60 nC @ 4.5 V | ±16V | 3290 pF @ 25 V | - | 3.8W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF2804STRL7PMOSFET N-CH 40V 240A D2PAK |
3632 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 6930 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDN360PSMALL SIGNAL FIELD-EFFECT TRANSI |
2781 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4.5V, 10V | 80mOhm @ 2A, 10V | 3V @ 250µA | 9 nC @ 10 V | ±20V | 298 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRL3715ZPBFMOSFET N-CH 20V 50A TO220AB |
3011 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 50A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11 nC @ 4.5 V | ±20V | 870 pF @ 10 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDU7N60NZTUMOSFET N-CH 600V 5.5A I-PAK |
2713 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET-II™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.5A (Tc) | 10V | 1.25Ohm @ 2.75A, 10V | 5V @ 250µA | 17 nC @ 10 V | ±25V | 730 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDB110N15APOWER FIELD-EFFECT TRANSISTOR, 9 |
2530 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 92A (Tc) | 10V | 11mOhm @ 92A, 10V | 4V @ 250µA | 61 nC @ 10 V | ±20V | 4510 pF @ 75 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF3805STRLMOSFET N-CH 55V 160A D2PAK |
2513 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 160A (Tc) | - | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290 nC @ 10 V | - | 7960 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFB4620PBFIRFB4620 - 12V-300V N-CHANNEL PO |
2975 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 25A (Tc) | 10V | 72.5mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRF3805S-7TRLMOSFET N-CH 55V 160A D2PAK |
3335 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 160A (Tc) | 10V | 2.6mOhm @ 140A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7820 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFB7746PBFMOSFET N-CH 75V 59A TO220AB |
3752 | 1.00 |
ДобавитьРасследования |
Bulk | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 59A (Tc) | 6V, 10V | 10.6mOhm @ 35A, 10V | 3.7V @ 100µA | 83 nC @ 10 V | ±20V | 3049 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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