Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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FDMS015N04BMOSFET N-CH 40V 31.3A/100A 8PQFN |
3328 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 31.3A (Ta), 100A (Tc) | 10V | 1.5mOhm @ 50A, 10V | 4V @ 250µA | 118 nC @ 10 V | ±20V | 8725 pF @ 20 V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDB2572MOSFET N-CH 150V 4A/29A TO263AB |
2377 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4A (Ta), 29A (Tc) | 6V, 10V | 54mOhm @ 9A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB80N06S2L-11IPB80N06 - 55V-60V N-CHANNEL AUT |
3900 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 11mOhm @ 40A, 10V | 2V @ 93µA | 80 nC @ 10 V | ±20V | 2075 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFH5301TRPBFIRFH5301 - 12V-300V N-CHANNEL PO |
2370 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta), 100A (Tc) | 4.5V, 10V | 1.85mOhm @ 50A, 10V | 2.35V @ 100µA | 77 nC @ 10 V | ±20V | 5114 pF @ 15 V | - | 3.6W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPN70R1K5CESMALL SIGNAL FIELD-EFFECT TRANSI |
2148 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 5.4A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDV305NSMALL SIGNAL FIELD-EFFECT TRANSI |
3630 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 900mA (Ta) | 2.5V, 4.5V | 220mOhm @ 900mA, 4.5V | 1.5V @ 250µA | 1.5 nC @ 4.5 V | ±12V | 109 pF @ 10 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF3324.5A, 400V, 1.5OHM, N-CHANNEL PO |
3705 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDPF041N06BL1MOSFET N-CH 60V 77A TO220F |
3635 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 77A (Tc) | 10V | 4.1mOhm @ 77A, 10V | 4V @ 250µA | 69 nC @ 10 V | ±20V | 5690 pF @ 30 V | - | 44.1W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDY301NZSMALL SIGNAL FIELD-EFFECT TRANSI |
3063 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 200mA (Ta) | 1.5V, 4.5V | 5Ohm @ 200mA, 4.5V | 1.5V @ 250µA | 1.1 nC @ 4.5 V | ±12V | 60 pF @ 10 V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD25N06S4L-30ATMA2IPD25N06 - 55V-60V N-CHANNEL AUT |
2407 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRF4104SPBFIRF4104 - 12V-300V N-CHANNEL POW |
2845 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP60R125CPPOWER FIELD-EFFECT TRANSISTOR, 2 |
3006 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IPP60R600P6POWER FIELD-EFFECT TRANSISTOR, 6 |
2495 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDA69N25POWER FIELD-EFFECT TRANSISTOR, 6 |
3457 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 69A (Tc) | 10V | 41mOhm @ 34.5A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±30V | 4640 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R125P6POWER FIELD-EFFECT TRANSISTOR |
3799 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRF8252PBFMOSFET N-CH 25V 25A 8SO |
2626 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 25A (Ta) | 4.5V, 10V | 2.7mOhm @ 25A, 10V | 2.35V @ 100µA | 53 nC @ 4.5 V | ±20V | 5305 pF @ 13 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDD5612POWER FIELD-EFFECT TRANSISTOR, 1 |
3731 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 5.4A (Ta) | 6V, 10V | 55mOhm @ 5.4A, 10V | 3V @ 250µA | 11 nC @ 10 V | ±20V | 660 pF @ 30 V | - | 3.8W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFL024NTRPBFIRFL024 - 12V-300V N-CHANNEL POW |
2776 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDP8870POWER FIELD-EFFECT TRANSISTOR, 1 |
2687 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 156A (Tc) | 4.5V, 10V | 4.1mOhm @ 35A, 10V | 2.5V @ 250µA | 132 nC @ 10 V | ±20V | 5200 pF @ 15 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP254BFP00125A, 250V, 0.14OHM, N-CHANNEL PO |
3106 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 25A (Tc) | 10V | 140mOhm @ 12.5A, 10V | 4V @ 250µA | 123 nC @ 10 V | ±30V | 3400 pF @ 25 V | - | 221W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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