Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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2N7002WSMALL SIGNAL FIELD-EFFECT TRANSI |
2753 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 50mA, 5V | 2V @ 250µA | - | ±20V | 50 pF @ 25 V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFH5007TRPBFIRFH5007 - 12V-300V N-CHANNEL PO |
2509 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 17A (Ta), 100A (Tc) | 10V | 5.9mOhm @ 50A, 10V | 4V @ 150µA | 98 nC @ 10 V | ±20V | 4290 pF @ 25 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FQP8N90CMOSFET N-CH 900V 6.3A TO220-3 |
2288 | 1.00 |
ДобавитьРасследования |
Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 6.3A (Tc) | 10V | 1.9Ohm @ 3.15A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 2080 pF @ 25 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF6648TRPBFIRF6648 - 12V-300V N-CHANNEL POW |
3910 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 86A (Tc) | 10V | 7mOhm @ 17A, 10V | 4.9V @ 150µA | 50 nC @ 10 V | ±20V | 2120 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDPF12N60NZPOWER FIELD-EFFECT TRANSISTOR, 1 |
2686 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET-II™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 34 nC @ 10 V | ±30V | 1676 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFP4110PBFIRFP4110 - 12V-300V N-CHANNEL PO |
3702 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 9620 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FCH190N65F-F155MOSFET N-CH 650V 20.6A TO247 |
2453 | 0.00 |
ДобавитьРасследования |
Bulk | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.6A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 2mA | 78 nC @ 10 V | ±20V | 3225 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCPF220N80POWER FIELD-EFFECT TRANSISTOR |
3157 | 1.00 |
ДобавитьРасследования |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 23A (Tc) | 10V | 220mOhm @ 11.5A, 10V | 4.5V @ 2.3mA | 105 nC @ 10 V | ±20V | 4560 pF @ 100 V | - | 44W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDS4672ASMALL SIGNAL FIELD-EFFECT TRANSI |
2428 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 11A (Ta) | 4.5V | 13mOhm @ 11A, 4.5V | 2V @ 250µA | 49 nC @ 4.5 V | ±12V | 4766 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK9M6R6-30EXBUK9M6R6-30E - N-CHANNEL 30V, LO |
2667 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | 5V | 5.3mOhm @ 20A, 10V | 2.1V @ 1mA | 18 nC @ 5 V | ±10V | 2001 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS7680MOSFET N-CH 30V 14A/28A 8PQFN |
2050 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta), 28A (Tc) | 4.5V, 10V | 6.9mOhm @ 14A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±20V | 1850 pF @ 15 V | - | 2.5W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDB8443MOSFET N-CH 40V 25A/120A TO263AB |
2250 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 25A (Ta), 120A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 185 nC @ 10 V | ±20V | 9310 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSC030N03MSGBSC030N03 - 12V-300V N-CHANNEL P |
3099 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDMC2674POWER FIELD-EFFECT TRANSISTOR, 1 |
2748 | 1.00 |
ДобавитьРасследования |
Bulk | UniFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 220 V | 1A (Ta), 7A (Tc) | 10V | 366mOhm @ 1A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 1180 pF @ 100 V | - | 2.1W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK9Y59-60E,115N-CHANNEL 60 V, 59 MILLI OHMS LO |
2440 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 16.7A (Tc) | 5V | 52mOhm @ 5A, 10V | 2.1V @ 1mA | 6.1 nC @ 5 V | ±10V | 715 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPW60R031CFD7600V COOLMOS N-CHANNEL POWER MOS |
3956 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDN358PSMALL SIGNAL FIELD-EFFECT TRANSI |
2462 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 4.5V, 10V | 125mOhm @ 1.5A, 10V | 3V @ 250µA | 5.6 nC @ 10 V | ±20V | 182 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDB0170N607LMOSFET N-CH 60V 300A TO263-7 |
2440 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 300A (Tc) | 10V | 1.4mOhm @ 39A, 10V | 4V @ 250µA | 243 nC @ 10 V | ±20V | 19250 pF @ 30 V | - | 3.8W (Ta), 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW65R019C775A, 650V, 0.019OHM, N-CHANNEL M |
2815 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215 nC @ 10 V | ±20V | 9900 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDP050AN06A0POWER FIELD-EFFECT TRANSISTOR, 1 |
2755 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Ta), 80A (Tc) | 6V, 10V | 5mOhm @ 80A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 245W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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