Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT58M50JU3MOSFET N-CH 500V 58A SOT227 |
2285 | 30.40 |
ДобавитьРасследования |
Bulk | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 10800 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT6010LLLGMOSFET N-CH 600V 54A TO264 |
2974 | 30.71 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | - | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 6710 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFB170N30PMOSFET N-CH 300V 170A PLUS264 |
2013 | 30.78 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 170A (Tc) | 10V | 18mOhm @ 85A, 10V | 4.5V @ 1mA | 258 nC @ 10 V | ±20V | 20000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT20M20JLLMOSFET N-CH 200V 104A ISOTOP |
3144 | 30.86 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 104A (Tc) | - | 20mOhm @ 52A, 10V | 5V @ 2.5mA | 110 nC @ 10 V | - | 6850 pF @ 25 V | - | - | - | Chassis Mount |
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IXTH44N25L2MOSFET N-CH 250V 44A TO247 |
3681 | 30.88 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 44A (Tc) | 10V | 75mOhm @ 22A, 10V | 4.5V @ 250µA | 256 nC @ 10 V | ±20V | 5740 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFB210N30P3MOSFET N-CH 300V 210A PLUS264 |
2973 | 31.11 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 210A (Tc) | 10V | 14.5mOhm @ 105A, 10V | 5V @ 8mA | 268 nC @ 10 V | ±20V | 16200 pF @ 25 V | - | 1890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN34N80MOSFET N-CH 800V 34A SOT-227B |
3821 | 31.36 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 800 V | 34A (Tc) | 10V | 240mOhm @ 500mA, 10V | 5V @ 8mA | 270 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFX44N80Q3MOSFET N-CH 800V 44A PLUS247-3 |
2186 | 31.37 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | 10V | 190mOhm @ 22A, 10V | 6.5V @ 8mA | 185 nC @ 10 V | ±30V | 9840 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT21M100JMOSFET N-CH 1000V 21A ISOTOP |
3468 | 31.59 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | 10V | 380mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 462W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT19F100JMOSFET N-CH 1000V 20A ISOTOP |
2944 | 31.63 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 20A (Tc) | 10V | 440mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT10M11JVRU2MOSFET N-CH 100V 142A SOT227 |
2780 | 31.76 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 142A (Tc) | 10V | 11mOhm @ 71A, 10V | 4V @ 2.5mA | 300 nC @ 10 V | ±30V | 8600 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFX26N100PMOSFET N-CH 1000V 26A PLUS247-3 |
3495 | 31.85 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 26A (Tc) | 10V | 390mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT20M22JVRU2MOSFET N-CH 200V 97A SOT227 |
3138 | 31.90 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 97A (Tc) | 10V | 22mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT20M22JVRU3MOSFET N-CH 200V 97A SOT227 |
3206 | 31.90 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 97A (Tc) | 10V | 22mOhm @ 48.5A, 10V | 4V @ 2.5mA | 290 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFR64N50Q3MOSFET N-CH 500V 45A ISOPLUS247 |
2542 | 31.90 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 45A (Tc) | 10V | 95mOhm @ 32A, 10V | 6.5V @ 4mA | 145 nC @ 10 V | ±30V | 6950 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT39F60JMOSFET N-CH 600V 42A ISOTOP |
2614 | 32.37 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 42A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT50M75JLLU3MOSFET N-CH 500V 51A SOT227 |
3453 | 32.42 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 25.5A, 10V | 5V @ 1mA | 123 nC @ 10 V | ±30V | 5590 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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C3M0032120J11200V 32MOHM SIC MOSFET |
3424 | 32.58 |
ДобавитьРасследования |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 68A (Tc) | 15V | 43mOhm @ 41.4A, 15V | 3.6V @ 11.5mA | 111 nC @ 15 V | +15V, -4V | 3424 pF @ 1000 V | - | 277W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT20M22JVRMOSFET N-CH 200V 97A ISOTOP |
2760 | 32.60 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 97A (Tc) | - | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | - | 10200 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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APT6010B2FLLGMOSFET N-CH 600V 54A T-MAX |
3528 | 32.90 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | - | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 6710 pF @ 25 V | - | - | - | Through Hole |
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