Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT38M50JMOSFET N-CH 500V 38A ISOTOP |
3768 | 28.69 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 38A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN48N60PMOSFET N-CH 600V 40A SOT227B |
3332 | 28.81 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 140mOhm @ 4A, 10V | 5.5V @ 8mA | 150 nC @ 10 V | ±30V | 8860 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT26F120LMOSFET N-CH 1200V 27A TO264 |
3353 | 28.91 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 27A (Tc) | 10V | 650mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT50M65LLLGMOSFET N-CH 500V 67A TO264 |
2769 | 28.91 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 67A (Tc) | 10V | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT26F120B2MOSFET N-CH 1200V 27A T-MAX |
3787 | 28.91 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 27A (Tc) | 10V | 650mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 9670 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFL132N50P3MOSFET N-CH 500V 63A ISOPLUS264 |
3659 | 29.13 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 63A (Tc) | 10V | 43mOhm @ 66A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18600 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
| |
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IXTT4N150HV-TRLMOSFET N-CH 1500V 4A TO268HV |
2626 | 29.30 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Tc) | 10V | 6Ohm @ 2A, 10V | 5V @ 250µA | 44.5 nC @ 10 V | ±30V | 1576 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT51M50JMOSFET N-CH 500V 51A ISOTOP |
3770 | 29.38 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT50M65B2FLLGMOSFET N-CH 500V 67A T-MAX |
2972 | 29.50 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 67A (Tc) | 10V | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT50M65LFLLGMOSFET N-CH 500V 67A TO264 |
3550 | 29.50 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 67A (Tc) | 10V | 65mOhm @ 33.5A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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GA10SICP12-263TRANS SJT 1200V 25A D2PAK |
2833 | 29.68 |
ДобавитьРасследования |
Tube | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 100mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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APT30F60JMOSFET N-CH 600V 31A ISOTOP |
3517 | 29.83 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTR120P20TMOSFET P-CH 200V 90A ISOPLUS247 |
3084 | 29.85 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 32mOhm @ 60A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 73000 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTR210P10TMOSFET P-CH 100V 195A ISOPLUS247 |
2870 | 29.85 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 195A (Tc) | 10V | 8mOhm @ 105A, 10V | 4.5V @ 250µA | 740 nC @ 10 V | ±15V | 69500 pF @ 25 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN26N90MOSFET N-CH 900V 26A SOT-227B |
3100 | 29.85 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 900 V | 26A (Tc) | 10V | 300mOhm @ 13A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±20V | 10800 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT1201R5BVFRGMOSFET N-CH 1200V 10A TO247 |
2887 | 29.08 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 10A (Tc) | 10V | 1.5Ohm @ 5A, 10V | 4V @ 1mA | 285 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT30M36LLLGMOSFET N-CH 300V 84A TO264 |
3137 | 30.03 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 84A (Tc) | - | 36mOhm @ 42A, 10V | 5V @ 2.5mA | 115 nC @ 10 V | - | 6480 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT39M60JMOSFET N-CH 600V 42A ISOTOP |
3025 | 30.06 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 42A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT5010JLLU3MOSFET N-CH 500V 41A SOT227 |
3712 | 30.11 |
ДобавитьРасследования |
Bulk | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 96 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT58M50JU2MOSFET N-CH 500V 58A SOT227 |
3484 | 30.40 |
ДобавитьРасследования |
Bulk | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 10800 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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