Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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APT12080LVRGMOSFET N-CH 1200V 16A TO264 |
2674 | 25.78 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 16A (Tc) | 10V | 800mOhm @ 8A, 10V | 4V @ 2.5mA | 485 nC @ 10 V | ±30V | 7800 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXKR40N60CMOSFET N-CH 600V 38A ISOPLUS247 |
3389 | 25.86 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 70mOhm @ 25A, 10V | 3.9V @ 3mA | 250 nC @ 10 V | ±20V | - | Super Junction | - | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT56F60B2MOSFET N-CH 600V 60A T-MAX |
2438 | 26.04 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCTH60N120G2-7PTD WBG & POWER RF |
2022 | 26.05 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 60A (Tc) | 18V | 52mOhm @ 30A, 10V | 5V @ 1mA | 94 nC @ 18 V | +22V, -10V | 1969 pF @ 800 V | - | 390W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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APT10050LVFRGMOSFET N-CH 1000V 21A TO264 |
2794 | 26.37 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT10050B2VFRGMOSFET N-CH 1000V 21A T-MAX |
3907 | 26.44 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT40N60JCU3MOSFET N-CH 600V 40A SOT227 |
3151 | 26.62 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 70mOhm @ 20A, 10V | 3.9V @ 1mA | 259 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT6011B2VRGMOSFET N-CH 600V 49A T-MAX |
2034 | 26.70 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | - | 110mOhm @ 24.5A, 10V | 4V @ 2.5mA | 450 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT30M60JMOSFET N-CH 600V 31A ISOTOP |
2717 | 26.72 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 5890 pF @ 25 V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN120N20MOSFET N-CH 200V 120A SOT-227B |
3481 | 26.93 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 120A (Tc) | 10V | 17mOhm @ 500mA, 10V | 4V @ 8mA | 360 nC @ 10 V | ±20V | 9100 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT20M16LFLLGMOSFET N-CH 200V 100A TO264 |
3257 | 27.26 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 16mOhm @ 50A, 10V | 5V @ 2.5mA | 140 nC @ 10 V | - | 7220 pF @ 25 V | - | - | - | Through Hole |
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IXFL60N80PMOSFET N-CH 800V 40A ISOPLUS264 |
3839 | 27.27 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 40A (Tc) | 10V | 150mOhm @ 30A, 10V | 5V @ 8mA | 250 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK26N100PMOSFET N-CH 1000V 26A TO264AA |
3426 | 27.34 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 26A (Tc) | 10V | 390mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR20N120PMOSFET N-CH 1200V 13A ISOPLUS247 |
3612 | 27.37 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 13A (Tc) | 10V | 630mOhm @ 10A, 10V | 6.5V @ 1mA | 193 nC @ 10 V | ±30V | 11100 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT20M18B2VFRGMOSFET N-CH 200V 100A T-MAX |
3781 | 27.49 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 330 nC @ 10 V | - | 9880 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT10045LLLGMOSFET N-CH 1000V 23A TO264 |
2069 | 27.59 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | - | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | - | 4350 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFX26N120PMOSFET N-CH 1200V 26A PLUS247-3 |
3003 | 27.61 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 26A (Tc) | 10V | 500mOhm @ 13A, 10V | 6.5V @ 1mA | 225 nC @ 10 V | ±30V | 16000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFB52N90PMOSFET N-CH 900V 52A PLUS264 |
2809 | 27.85 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 52A (Tc) | 10V | 160mOhm @ 26A, 10V | 6.5V @ 1mA | 308 nC @ 10 V | ±30V | 19000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXKF40N60SCD1MOSFET N-CH 600V 41A I4PAC |
3034 | 27.86 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 41A (Tc) | 10V | 70mOhm @ 25A, 10V | 3.9V @ 3mA | 250 nC @ 10 V | ±20V | - | Super Junction | - | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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C3M0025065J1650V 25 M SIC MOSFET |
2745 | 27.87 |
ДобавитьРасследования |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 80A (Tc) | 15V | 34mOhm @ 33.5A, 15V | 3.6V @ 9.22mA | 109 nC @ 15 V | +19V, -8V | 2980 pF @ 400 V | - | 271W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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