Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT1201R2BFLLGMOSFET N-CH 1200V 12A TO247 |
2622 | 27.92 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | - | 1.25Ohm @ 6A, 10V | 5V @ 1mA | 100 nC @ 10 V | - | 2540 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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MKE38RK600DFEL-TUBMOSFET N-CH 600V 50A SMPD |
2873 | 27.95 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
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APT1001R6BFLLGMOSFET N-CH 1000V 8A TO247 |
2502 | 28.03 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 8A (Tc) | 10V | 1.6Ohm @ 4A, 10V | 5V @ 1mA | 55 nC @ 10 V | ±30V | 1320 pF @ 25 V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR48N60Q3MOSFET N-CH 600V 32A ISOPLUS247 |
3891 | 28.10 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 32A (Tc) | 10V | 154mOhm @ 24A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7020 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX24N100Q3MOSFET N-CH 1000V 24A PLUS247-3 |
2504 | 28.12 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 440mOhm @ 12A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT10045B2FLLGMOSFET N-CH 1000V 23A T-MAX |
3948 | 28.14 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | - | 460mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | - | 4350 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT10045LFLLGMOSFET N-CH 1000V 23A TO264 |
2065 | 28.14 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | - | 460mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | - | 4350 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT6010B2LLGMOSFET N-CH 600V 54A T-MAX |
2484 | 28.20 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | 10V | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | ±30V | 6710 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK20N120PMOSFET N-CH 1200V 20A TO264AA |
2903 | 28.24 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 570mOhm @ 10A, 10V | 6.5V @ 1mA | 193 nC @ 10 V | ±30V | 11100 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FMD40-06KCMOSFET N-CH 600V 38A I4PAC |
2225 | 28.27 |
ДобавитьРасследования |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | 10V | 70mOhm @ 20A, 10V | 3.9V @ 2.7mA | 250 nC @ 10 V | ±20V | - | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDM47-06KC5MOSFET N-CH 600V 47A I4PAC |
3673 | 28.32 |
ДобавитьРасследования |
Tube | CoolMOS™, HiPerDyn™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT38F50JMOSFET N-CH 500V 38A ISOTOP |
3689 | 28.34 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 38A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFK64N50Q3MOSFET N-CH 500V 64A TO264AA |
3410 | 28.36 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 64A (Tc) | 10V | 85mOhm @ 32A, 10V | 6.5V @ 4mA | 145 nC @ 10 V | ±30V | 6950 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK48N60Q3MOSFET N-CH 600V 48A TO264AA |
2891 | 28.36 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 140mOhm @ 24A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7020 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FMD47-06KC5MOSFET N-CH 600V 47A I4PAC |
3424 | 28.57 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190 nC @ 10 V | ±20V | 6800 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFL38N100PMOSFET N-CH 1000V 29A I5PAK |
2057 | 31.95 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 29A (Tc) | 10V | 230mOhm @ 19A, 10V | 6.5V @ 1mA | 350 nC @ 10 V | ±30V | 24000 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN150N10MOSFET N-CH 100V 150A SOT-227 |
2010 | 32.08 |
ДобавитьРасследования |
Bulk | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 10V | 12mOhm @ 75A, 10V | 4V @ 8mA | 360 nC @ 10 V | ±20V | 9000 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTH3N200P3HVMOSFET N-CH 2000V 3A TO247 |
3878 | 32.11 |
ДобавитьРасследования |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 3A (Tc) | 10V | 8Ohm @ 1.5A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±20V | 1860 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFL34N100MOSFET N-CH 1000V 30A ISOPLUS264 |
3361 | 32.33 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | 10V | 280mOhm @ 30A, 10V | 5V @ 8mA | 380 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 550W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT8024LFLLGMOSFET N-CH 800V 31A TO264 |
3170 | 28.69 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 31A (Tc) | 10V | 260mOhm @ 15.5A, 10V | 5V @ 2.5mA | 160 nC @ 10 V | ±30V | 4670 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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