Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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HCT7000MMOSFET N-CH 60V 200MA 3SMD |
2026 | 24.65 |
ДобавитьРасследования |
Bulk,Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±40V | 60 pF @ 25 V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT1201R4BFLLGMOSFET N-CH 1200V 9A TO247 |
2374 | 24.21 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | 10V | 1.5Ohm @ 4.5A, 10V | 5V @ 1mA | 75 nC @ 10 V | ±30V | 2030 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR44N50Q3MOSFET N-CH 500V 25A ISOPLUS247 |
3991 | 24.22 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 25A (Tc) | 10V | 154mOhm @ 22A, 10V | 6.5V @ 4mA | 93 nC @ 10 V | ±30V | 4800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN280N07MOSFET N-CH 70V 280A SOT-227B |
3811 | 24.30 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 70 V | 280A (Tc) | 10V | 5mOhm @ 120A, 10V | 4V @ 8mA | 420 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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IXTT140N075L2HVMOSFET N-CH 75V 140A TO268HV |
3935 | 24.36 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 140A (Tc) | 10V | 11mOhm @ 70A, 10V | 4.5V @ 250µA | 275 nC @ 10 V | ±20V | 9300 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT8030LVRGMOSFET N-CH 800V 27A TO264 |
2242 | 24.37 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT34F100B2MOSFET N-CH 1000V 35A T-MAX |
3403 | 24.39 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 35A (Tc) | 10V | 380mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT34F100LMOSFET N-CH 1000V 35A TO264 |
2290 | 24.39 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 35A (Tc) | 10V | 400mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT50M75B2FLLGMOSFET N-CH 500V 57A T-MAX |
3242 | 24.54 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 57A (Tc) | - | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | - | 5590 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT84F50B2MOSFET N-CH 500V 84A T-MAX |
3337 | 24.54 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT10M09LVFRGMOSFET N-CH 100V 100A TO264 |
2962 | 24.70 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | - | 9mOhm @ 50A, 10V | 4V @ 2.5mA | 350 nC @ 10 V | - | 9875 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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VS-FA40SA50LCMOSFET N-CH 500V 40A SOT-227 |
2800 | 24.73 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 130mOhm @ 23A, 10V | 4V @ 250µA | 420 nC @ 10 V | ±20V | 6900 pF @ 25 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT10078SLLGMOSFET N-CH 1000V 14A D3PAK |
3113 | 24.73 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 780mOhm @ 7A, 10V | 5V @ 1mA | 95 nC @ 10 V | ±30V | 2525 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTH04N300P3HVMOSFET N-CH 3000V 400MA TO247HV |
3164 | 24.81 |
ДобавитьРасследования |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 3000 V | 400mA (Tc) | 10V | 190Ohm @ 200mA, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 283 pF @ 25 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT8030LVFRGMOSFET N-CH 800V 27A TO264 |
2479 | 24.90 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT1201R4SFLLGMOSFET N-CH 1200V 9A D3PAK |
2907 | 25.30 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | - | 1.4Ohm @ 4.5A, 10V | 5V @ 1mA | 120 nC @ 10 V | - | 2500 pF @ 25 V | - | - | - | Surface Mount |
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Таблицы данных |
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APT6013B2LLGMOSFET N-CH 600V 43A T-MAX |
3095 | 25.30 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | - | 130mOhm @ 21.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | - | 5630 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT6013LLLGMOSFET N-CH 600V 43A TO264 |
2754 | 25.30 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | 10V | 130mOhm @ 21.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | ±30V | 5630 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN32N80PMOSFET N-CH 800V 29A SOT-227B |
2486 | 25.49 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 29A (Tc) | 10V | 270mOhm @ 16A, 10V | 5V @ 8mA | 150 nC @ 10 V | ±30V | 8820 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFR40N90PMOSFET N-CH 900V 21A ISOPLUS247 |
2170 | 25.71 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 21A (Tc) | 10V | 230mOhm @ 20A, 10V | 6.5V @ 1mA | 230 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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