Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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APT1201R5BVRGMOSFET N-CH 1200V 10A TO247 |
3425 | 37.21 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 10A (Tc) | 10V | 1.5Ohm @ 5A, 10V | 4V @ 1mA | 28 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | Through Hole |
![]() Таблицы данных |
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APT5010JLLMOSFET N-CH 500V 41A ISOTOP |
3122 | 37.42 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 41A (Tc) | - | 100mOhm @ 20.5A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | - | 4360 pF @ 25 V | - | - | - | Chassis Mount |
![]() Таблицы данных |
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IXFN32N120MOSFET N-CH 1200V 32A SOT-227B |
3337 | 37.83 |
ДобавитьРасследования |
Box | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1200 V | 32A | - | 350mOhm @ 500mA, 10V | 5V @ 8mA | 400 nC @ 10 V | - | 15900 pF @ 25 V | - | - | - | Chassis Mount |
![]() Таблицы данных |
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NTC020N120SC1SIC MOS WAFER SALES 20MOHM 1200V |
3320 | 38.50 |
ДобавитьРасследования |
Tray | - | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 103A (Tc) | 20V | 28mOhm @ 60A, 20V | 4.3V @ 20mA | 203 nC @ 20 V | +25V, -15V | 2890 pF @ 800 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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APT6013JLLMOSFET N-CH 600V 39A ISOTOP |
2587 | 38.70 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 39A (Tc) | 10V | 130mOhm @ 19.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | ±30V | 5630 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
![]() Таблицы данных |
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APT12057B2LLGMOSFET N-CH 1200V 22A T-MAX |
2974 | 38.91 |
ДобавитьРасследования |
Bulk | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 22A (Tc) | 10V | 570mOhm @ 11A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 6200 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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APT26M100JCU2MOSFET N-CH 1000V 26A SOT227 |
3111 | 39.07 |
ДобавитьРасследования |
Bulk | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 26A (Tc) | 10V | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 7868 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
![]() Таблицы данных |
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APT26M100JCU3MOSFET N-CH 1000V 26A SOT227 |
2631 | 39.07 |
ДобавитьРасследования |
Bulk | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 26A (Tc) | 10V | 396mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 7868 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
![]() Таблицы данных |
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APT50M50L2LLGMOSFET N-CH 500V 89A 264 MAX |
3823 | 39.15 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 89A (Tc) | - | 50mOhm @ 44.5A, 10V | 5V @ 5mA | 200 nC @ 10 V | - | 10550 pF @ 25 V | - | - | - | Through Hole |
![]() Таблицы данных |
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APT50M85JVRMOSFET N-CH 500V 50A ISOTOP |
3223 | 39.26 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 50A (Tc) | - | 85mOhm @ 500mA, 10V | 4V @ 1mA | 535 nC @ 10 V | - | 10800 pF @ 25 V | - | - | - | Chassis Mount |
![]() Таблицы данных |
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MKE38P600LB-TUBMOSFET N-CH 600V 50A SMPD |
2647 | 39.39 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount |
![]() Таблицы данных |
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STY112N65M5MOSFET N-CH 650V 96A MAX247 |
3563 | 39.49 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 96A (Tc) | 10V | 22mOhm @ 47A, 10V | 5V @ 250µA | 350 nC @ 10 V | ±25V | 16870 pF @ 100 V | - | 625W (Tc) | 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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APT6010JLLMOSFET N-CH 600V 47A ISOTOP |
3876 | 39.85 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | - | 100mOhm @ 23.5A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 6710 pF @ 25 V | - | - | - | Chassis Mount |
![]() Таблицы данных |
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APT30M30JLLMOSFET N-CH 300V 88A ISOTOP |
2691 | 40.12 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 88A (Tc) | - | 30mOhm @ 44A, 10V | 5V @ 2.5mA | 140 nC @ 10 V | - | 7030 pF @ 25 V | - | - | - | Chassis Mount |
![]() Таблицы данных |
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APT6013JFLLMOSFET N-CH 600V 39A ISOTOP |
3827 | 40.39 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 39A (Tc) | - | 130mOhm @ 19.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | - | 5630 pF @ 25 V | - | - | - | Chassis Mount |
![]() Таблицы данных |
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APT12057B2FLLGMOSFET N-CH 1200V 22A T-MAX |
3062 | 40.50 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 22A (Tc) | 10V | 570mOhm @ 11A, 10V | 5V @ 2.5mA | 185 nC @ 10 V | ±30V | 5155 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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APT20M120JCU2MOSFET N-CH 1200V 20A SOT227 |
3828 | 40.53 |
ДобавитьРасследования |
Bulk | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 672mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 7736 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
![]() Таблицы данных |
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APT20M120JCU3MOSFET N-CH 1200V 20A SOT227 |
3956 | 40.53 |
ДобавитьРасследования |
Bulk | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 672mOhm @ 14A, 10V | 5V @ 2.5mA | 300 nC @ 10 V | ±30V | 7736 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
![]() Таблицы данных |
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IXTX17N120LMOSFET N-CH 1200V 17A PLUS247-3 |
2296 | 40.61 |
ДобавитьРасследования |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 17A (Tc) | 20V | 900mOhm @ 8.5A, 20V | 5V @ 250µA | 155 nC @ 15 V | ±30V | 8300 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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APT30M40JVFRMOSFET N-CH 300V 70A ISOTOP |
3611 | 40.76 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 70A (Tc) | 10V | 40mOhm @ 500mA, 10V | 4V @ 2.5mA | 425 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |