Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT1201R5BVRG APT1201R5BVRG

APT1201R5BVRG

MOSFET N-CH 1200V 10A TO247

Microchip Technology

3425 37.21
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Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 10A (Tc) 10V 1.5Ohm @ 5A, 10V 4V @ 1mA 28 nC @ 10 V - 4440 pF @ 25 V - - - Through Hole
APT5010JLL

Таблицы данных

APT5010JLL

APT5010JLL

MOSFET N-CH 500V 41A ISOTOP

Microchip Technology

3122 37.42
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Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 41A (Tc) - 100mOhm @ 20.5A, 10V 5V @ 2.5mA 95 nC @ 10 V - 4360 pF @ 25 V - - - Chassis Mount
IXFN32N120

Таблицы данных

IXFN32N120

IXFN32N120

MOSFET N-CH 1200V 32A SOT-227B

IXYS

3337 37.83
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Box HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1200 V 32A - 350mOhm @ 500mA, 10V 5V @ 8mA 400 nC @ 10 V - 15900 pF @ 25 V - - - Chassis Mount
NTC020N120SC1

Таблицы данных

NTC020N120SC1

NTC020N120SC1

SIC MOS WAFER SALES 20MOHM 1200V

onsemi

3320 38.50
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Tray - Last Time Buy N-Channel SiCFET (Silicon Carbide) 1200 V 103A (Tc) 20V 28mOhm @ 60A, 20V 4.3V @ 20mA 203 nC @ 20 V +25V, -15V 2890 pF @ 800 V - 535W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT6013JLL

Таблицы данных

APT6013JLL

APT6013JLL

MOSFET N-CH 600V 39A ISOTOP

Microchip Technology

2587 38.70
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Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) 10V 130mOhm @ 19.5A, 10V 5V @ 2.5mA 130 nC @ 10 V ±30V 5630 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
APT12057B2LLG

Таблицы данных

APT12057B2LLG

APT12057B2LLG

MOSFET N-CH 1200V 22A T-MAX

Microchip Technology

2974 38.91
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Bulk POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 22A (Tc) 10V 570mOhm @ 11A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 6200 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT26M100JCU2

Таблицы данных

APT26M100JCU2

APT26M100JCU2

MOSFET N-CH 1000V 26A SOT227

Microchip Technology

3111 39.07
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Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 396mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 7868 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT26M100JCU3

Таблицы данных

APT26M100JCU3

APT26M100JCU3

MOSFET N-CH 1000V 26A SOT227

Microchip Technology

2631 39.07
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Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 26A (Tc) 10V 396mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 7868 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT50M50L2LLG

Таблицы данных

APT50M50L2LLG

APT50M50L2LLG

MOSFET N-CH 500V 89A 264 MAX

Microchip Technology

3823 39.15
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Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 89A (Tc) - 50mOhm @ 44.5A, 10V 5V @ 5mA 200 nC @ 10 V - 10550 pF @ 25 V - - - Through Hole
APT50M85JVR

Таблицы данных

APT50M85JVR

APT50M85JVR

MOSFET N-CH 500V 50A ISOTOP

Microchip Technology

3223 39.26
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Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) - 85mOhm @ 500mA, 10V 4V @ 1mA 535 nC @ 10 V - 10800 pF @ 25 V - - - Chassis Mount
MKE38P600LB-TUB

Таблицы данных

MKE38P600LB-TUB

MKE38P600LB-TUB

MOSFET N-CH 600V 50A SMPD

IXYS

2647 39.39
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Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) - - - - - - - - - Surface Mount
STY112N65M5

Таблицы данных

STY112N65M5

STY112N65M5

MOSFET N-CH 650V 96A MAX247

STMicroelectronics

3563 39.49
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Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 47A, 10V 5V @ 250µA 350 nC @ 10 V ±25V 16870 pF @ 100 V - 625W (Tc) 150°C (TJ) Through Hole
APT6010JLL

Таблицы данных

APT6010JLL

APT6010JLL

MOSFET N-CH 600V 47A ISOTOP

Microchip Technology

3876 39.85
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Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) - 100mOhm @ 23.5A, 10V 5V @ 2.5mA 150 nC @ 10 V - 6710 pF @ 25 V - - - Chassis Mount
APT30M30JLL

Таблицы данных

APT30M30JLL

APT30M30JLL

MOSFET N-CH 300V 88A ISOTOP

Microchip Technology

2691 40.12
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Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) - 30mOhm @ 44A, 10V 5V @ 2.5mA 140 nC @ 10 V - 7030 pF @ 25 V - - - Chassis Mount
APT6013JFLL

Таблицы данных

APT6013JFLL

APT6013JFLL

MOSFET N-CH 600V 39A ISOTOP

Microchip Technology

3827 40.39
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Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 600 V 39A (Tc) - 130mOhm @ 19.5A, 10V 5V @ 2.5mA 130 nC @ 10 V - 5630 pF @ 25 V - - - Chassis Mount
APT12057B2FLLG

Таблицы данных

APT12057B2FLLG

APT12057B2FLLG

MOSFET N-CH 1200V 22A T-MAX

Microchip Technology

3062 40.50
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Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 22A (Tc) 10V 570mOhm @ 11A, 10V 5V @ 2.5mA 185 nC @ 10 V ±30V 5155 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M120JCU2

Таблицы данных

APT20M120JCU2

APT20M120JCU2

MOSFET N-CH 1200V 20A SOT227

Microchip Technology

3828 40.53
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Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 672mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 7736 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APT20M120JCU3

Таблицы данных

APT20M120JCU3

APT20M120JCU3

MOSFET N-CH 1200V 20A SOT227

Microchip Technology

3956 40.53
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Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 672mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 7736 pF @ 25 V - 543W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
IXTX17N120L

Таблицы данных

IXTX17N120L

IXTX17N120L

MOSFET N-CH 1200V 17A PLUS247-3

IXYS

2296 40.61
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Tube Linear Active N-Channel MOSFET (Metal Oxide) 1200 V 17A (Tc) 20V 900mOhm @ 8.5A, 20V 5V @ 250µA 155 nC @ 15 V ±30V 8300 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT30M40JVFR

Таблицы данных

APT30M40JVFR

APT30M40JVFR

MOSFET N-CH 300V 70A ISOTOP

Microchip Technology

3611 40.76
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Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 300 V 70A (Tc) 10V 40mOhm @ 500mA, 10V 4V @ 2.5mA 425 nC @ 10 V ±30V 10200 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
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