Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT12067LFLLGMOSFET N-CH 1200V 18A TO264 |
3051 | 35.21 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 18A (Tc) | - | 670mOhm @ 9A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 4420 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFR26N100PMOSFET N-CH 1000V 15A ISOPLUS247 |
3804 | 35.28 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 15A (Tc) | 10V | 430mOhm @ 13A, 10V | 6.5V @ 1mA | 197 nC @ 10 V | ±30V | 11900 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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MKE38P600LB-TRRMOSFET N-CH 600V 50A SMPD |
3868 | 35.31 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount |
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Таблицы данных |
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APT8020B2LLGMOSFET N-CH 800V 38A T-MAX |
3927 | 35.74 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | 10V | 200mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | ±30V | 5200 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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PCFD045N10AWDIE MOSFET N-CH 100V |
2032 | 35.75 |
ДобавитьРасследования |
Tray | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IXFN170N10MOSFET N-CH 100V 170A SOT-227B |
2378 | 35.76 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 10mOhm @ 500mA, 10V | 4V @ 8mA | 515 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT30M40JVRMOSFET N-CH 300V 70A ISOTOP |
3796 | 35.90 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 70A (Tc) | 10V | 40mOhm @ 500mA, 10V | 4V @ 2.5mA | 425 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFK44N80Q3MOSFET N-CH 800V 44A TO264AA |
3843 | 36.05 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 44A (Tc) | 10V | 190mOhm @ 22A, 10V | 6.5V @ 8mA | 185 nC @ 10 V | ±30V | 9840 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT29F80JMOSFET N-CH 800V 31A ISOTOP |
3827 | 36.38 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 31A (Tc) | 10V | 210mOhm @ 24A, 10V | 5V @ 2.5mA | 303 nC @ 10 V | ±30V | 9326 pF @ 25 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT58M50JCU2MOSFET N-CH 500V 58A SOT227 |
3605 | 36.38 |
ДобавитьРасследования |
Bulk | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 10800 pF @ 25 V | - | 543W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT22F120B2MOSFET N-CH 1200V 23A T-MAX |
2547 | 36.47 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 23A (Tc) | 10V | 700mOhm @ 12A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8370 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT50M75JLLMOSFET N-CH 500V 51A ISOTOP |
3918 | 36.51 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 51A (Tc) | - | 75mOhm @ 25.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | - | 5590 pF @ 25 V | - | - | - | Chassis Mount |
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Таблицы данных |
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IXFR26N120PMOSFET N-CH 1200V 15A ISOPLUS247 |
3951 | 36.53 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 15A (Tc) | 10V | 500mOhm @ 13A, 10V | 6.5V @ 1mA | 225 nC @ 10 V | ±30V | 14000 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN340N06MOSFET N-CH 60V 340A SOT-227B |
2001 | 36.70 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 340A (Tc) | 10V | 3mOhm @ 100A, 10V | 4V @ 8mA | 600 nC @ 10 V | ±20V | 16800 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT47F60JMOSFET N-CH 600V 49A ISOTOP |
2152 | 36.88 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN240N15T2MOSFET N-CH 150V 240A SOT227B |
2758 | 36.95 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 240A (Tc) | 10V | 5.2mOhm @ 60A, 10V | 5V @ 8mA | 460 nC @ 10 V | ±20V | 32000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT20M20LFLLGMOSFET N-CH 200V 100A TO264 |
3334 | 37.00 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 20mOhm @ 50A, 10V | 5V @ 2.5mA | 110 nC @ 10 V | - | 6850 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXTT1N250HV-TRLMOSFET N-CH 2500V 1.5A TO268HV |
2394 | 37.07 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 2500 V | 1.5A (Tc) | 10V | 40Ohm @ 750mA, 10V | 4V @ 250µA | 41 nC @ 10 V | ±20V | 1660 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXFX400N15X3MOSFET N-CH 150V 400A PLUS247-3 |
3970 | 37.14 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 3mOhm @ 200A, 10V | 4.5V @ 8mA | 365 nC @ 10 V | ±20V | 23700 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT22F100JMOSFET N-CH 1000V 23A ISOTOP |
2667 | 37.19 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 380mOhm @ 18A, 10V | - | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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