Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
|
IXTF6N200P3MOSFET N-CH 2000V 4A I4PAC |
3358 | 33.05 |
ДобавитьРасследования |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 4A (Tc) | 10V | 4.2Ohm @ 3A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±20V | 3700 pF @ 25 V | - | 215W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IXFN140N25TMOSFET N-CH 250V 120A SOT227B |
2209 | 33.10 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 120A (Tc) | 10V | 17mOhm @ 60A, 10V | 5V @ 4mA | 255 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
TPH3207WSGANFET N-CH 650V 50A TO247-3 |
3199 | 33.20 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 50A (Tc) | 10V | 41mOhm @ 32A, 8V | 2.65V @ 700µA | 42 nC @ 8 V | ±18V | 2197 pF @ 400 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
.jpg)
|
HCT7000MTXMOSFET N-CH 60V 200MA 3SMD |
2971 | 33.35 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±40V | 60 pF @ 25 V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
APT8020LLLGMOSFET N-CH 800V 38A TO264 |
2229 | 33.39 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | - | 200mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | - | 5200 pF @ 25 V | - | - | - | Through Hole |
|
Таблицы данных |
|
APT32M80JMOSFET N-CH 800V 33A ISOTOP |
2229 | 33.42 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 33A (Tc) | 10V | 190mOhm @ 24A, 10V | 5V @ 2.5mA | 303 nC @ 10 V | ±30V | 9326 pF @ 25 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
IXFZ140N25TMOSFET N-CH 250V 100A DE475 |
2460 | 33.59 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 100A (Tc) | 10V | 17mOhm @ 60A, 10V | 5V @ 4mA | 255 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 445W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
APT10045B2LLGMOSFET N-CH 1000V 23A T-MAX |
3613 | 33.63 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 23A (Tc) | 10V | 450mOhm @ 11.5A, 10V | 5V @ 2.5mA | 154 nC @ 10 V | ±30V | 4350 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
APT10035LLLGMOSFET N-CH 1000V 28A TO264 |
2685 | 33.72 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | 10V | 350mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | ±30V | 5185 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
APT58M50JMOSFET N-CH 500V 58A ISOTOP |
2588 | 33.76 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
APT25M100JMOSFET N-CH 1000V 25A ISOTOP |
2883 | 33.93 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 25A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 545W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
APT10035LFLLGMOSFET N-CH 1000V 28A TO264 |
2650 | 34.16 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | - | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | - | 5185 pF @ 25 V | - | - | - | Through Hole |
|
Таблицы данных |
|
APT10035B2FLLGMOSFET N-CH 1000V 28A T-MAX |
2602 | 34.41 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 28A (Tc) | 10V | 370mOhm @ 14A, 10V | 5V @ 2.5mA | 186 nC @ 10 V | ±30V | 5185 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IXFN280N085MOSFET N-CH 85V 280A SOT-227B |
3058 | 34.55 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 85 V | 280A (Tc) | 10V | 4.4mOhm @ 100A, 10V | 4V @ 8mA | 580 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
APT5010JVRU3MOSFET N-CH 500V 44A SOT227 |
3486 | 34.61 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 4V @ 2.5mA | 312 nC @ 10 V | ±30V | 7410 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
APT58F50JMOSFET N-CH 500V 58A ISOTOP |
2256 | 34.77 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
Таблицы данных |
|
APT20M18LVFRGMOSFET N-CH 200V 100A TO264 |
2822 | 34.85 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 330 nC @ 10 V | - | 9880 pF @ 25 V | - | - | - | Through Hole |
|
Таблицы данных |
|
APT8020B2FLLGMOSFET N-CH 800V 38A T-MAX |
3340 | 34.98 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 38A (Tc) | - | 220mOhm @ 19A, 10V | 5V @ 2.5mA | 195 nC @ 10 V | - | 5200 pF @ 25 V | - | - | - | Through Hole |
|
Таблицы данных |
|
APT6010LFLLGMOSFET N-CH 600V 54A TO264 |
2234 | 35.05 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 54A (Tc) | - | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | - | 6710 pF @ 25 V | - | - | - | Through Hole |
|
Таблицы данных |
|
APT12060LVFRGMOSFET N-CH 1200V 20A TO264 |
3151 | 35.21 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | - | 600mOhm @ 10A, 10V | 4V @ 1mA | 650 nC @ 10 V | - | 9500 pF @ 25 V | - | - | - | Through Hole |
Запрос котировок
