Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT20M18B2VRG

Таблицы данных

APT20M18B2VRG

APT20M18B2VRG

MOSFET N-CH 200V 100A T-MAX

Microchip Technology

3156 22.41
- +

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Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 18mOhm @ 50A, 10V 4V @ 2.5mA 330 nC @ 10 V - 9880 pF @ 25 V - - - Through Hole
APT20M18LVRG

Таблицы данных

APT20M18LVRG

APT20M18LVRG

MOSFET N-CH 200V 100A TO264

Microchip Technology

3454 22.41
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Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) - 18mOhm @ 50A, 10V 4V @ 2.5mA 330 nC @ 10 V - 9880 pF @ 25 V - - - Through Hole
IXFX80N50P

Таблицы данных

IXFX80N50P

IXFX80N50P

MOSFET N-CH 500V 80A PLUS247-3

IXYS

3801 22.42
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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 80A (Tc) 10V 65mOhm @ 40A, 10V 5V @ 8mA 197 nC @ 10 V ±30V 12700 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR230N20T

Таблицы данных

IXFR230N20T

IXFR230N20T

MOSFET N-CH 200V 156A ISOPLUS247

IXYS

2641 22.51
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Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 156A (Tc) 10V 8mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT10078BFLLG

Таблицы данных

APT10078BFLLG

APT10078BFLLG

MOSFET N-CH 1000V 14A TO247

Microchip Technology

3805 22.54
- +

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Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) - 780mOhm @ 7A, 10V 5V @ 1mA 95 nC @ 10 V - 2525 pF @ 25 V - - - Through Hole
IPW65R022CFD7AXKSA1

Таблицы данных

IPW65R022CFD7AXKSA1

IPW65R022CFD7AXKSA1

AUTOMOTIVE_COOLMOS PG-TO247-3

Infineon Technologies

3100 22.21
- +

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Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±20V 11659 pF @ 400 V - 446W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPWS65R022CFD7AXKSA1

Таблицы данных

IPWS65R022CFD7AXKSA1

IPWS65R022CFD7AXKSA1

AUTOMOTIVE_COOLMOS PG-TO247-3

Infineon Technologies

2087 22.23
- +

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Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 96A (Tc) 10V 22mOhm @ 58.2A, 10V 4.5V @ 2.91mA 234 nC @ 10 V ±30V 11659 pF @ 400 V - 446W (Tc) -40°C ~ 150°C (TJ) Through Hole
IXFX240N15T2

Таблицы данных

IXFX240N15T2

IXFX240N15T2

MOSFET N-CH 150V 240A PLUS247-3

IXYS

2928 22.60
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Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 240A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 460 nC @ 10 V ±20V 32000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK34N80

Таблицы данных

IXFK34N80

IXFK34N80

MOSFET N-CH 800V 34A TO-264AA

IXYS

3133 22.84
- +

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Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 34A (Tc) 10V 240mOhm @ 17A, 10V 5V @ 8mA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT60N60SCSG

Таблицы данных

APT60N60SCSG

APT60N60SCSG

MOSFET N-CH 600V 60A D3PAK

Microchip Technology

3403 22.95
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Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 45mOhm @ 44A, 10V 3.9V @ 3mA 190 nC @ 10 V ±30V 7200 pF @ 25 V Super Junction 431W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX150N30P3

Таблицы данных

IXFX150N30P3

IXFX150N30P3

MOSFET N-CH 300V 150A PLUS247-3

IXYS

3743 22.98
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Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 19mOhm @ 75A, 10V 5V @ 8mA 197 nC @ 10 V ±20V 12100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK170N10

Таблицы данных

IXFK170N10

IXFK170N10

MOSFET N-CH 100V 170A TO-264AA

IXYS

3618 23.00
- +

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Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 10mOhm @ 500mA, 10V 4V @ 8mA 515 nC @ 10 V ±20V 10300 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT44F80L

Таблицы данных

APT44F80L

APT44F80L

MOSFET N-CH 800V 47A TO264

Microchip Technology

3880 23.02
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 47A (Tc) 10V 240mOhm @ 24A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9330 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK140N30P

Таблицы данных

IXTK140N30P

IXTK140N30P

MOSFET N-CH 300V 140A TO264

IXYS

2083 23.13
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Bulk Polar Active N-Channel MOSFET (Metal Oxide) 300 V 140A (Tc) 10V 24mOhm @ 70A, 10V 5V @ 500µA 185 nC @ 10 V ±20V 14800 pF @ 25 V - - - Through Hole
APT40M70LVRG APT40M70LVRG

APT40M70LVRG

MOSFET N-CH 400V 57A TO264

Microchip Technology

3173 23.14
- +

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Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 400 V 57A (Tc) 10V 70mOhm @ 28.5A, 10V 4V @ 2.5mA 495 nC @ 10 V ±30V 8890 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH58N25L2 IXTH58N25L2

IXTH58N25L2

MOSFET N-CH 250V 58A TO247

IXYS

2547 23.21
- +

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Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 250 V 58A (Tc) 10V 64mOhm @ 29A, 10V 4.5V @ 250µA 330 nC @ 10 V ±20V 9200 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
STY60NM60

Таблицы данных

STY60NM60

STY60NM60

MOSFET N-CH 600V 60A MAX247

STMicroelectronics

3096 23.42
- +

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Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 60A (Tc) 10V 55mOhm @ 30A, 10V 5V @ 250µA 266 nC @ 10 V ±30V 7300 pF @ 25 V - 560W (Tc) 150°C (TJ) Through Hole
APT44F80B2

Таблицы данных

APT44F80B2

APT44F80B2

MOSFET N-CH 800V 47A T-MAX

Microchip Technology

3839 23.44
- +

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Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 47A (Tc) 10V 210mOhm @ 24A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9330 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT20M22LVFRG

Таблицы данных

APT20M22LVFRG

APT20M22LVFRG

MOSFET N-CH 200V 100A TO264

Microchip Technology

3907 23.46
- +

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Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 100A (Tc) 10V 22mOhm @ 500mA, 10V 4V @ 2.5mA 435 nC @ 10 V ±30V 10200 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT6015LVFRG

Таблицы данных

APT6015LVFRG

APT6015LVFRG

MOSFET N-CH 600V 38A TO264

Microchip Technology

2019 23.52
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Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) - 150mOhm @ 500mA, 10V 4V @ 2.5mA 475 nC @ 10 V - 9000 pF @ 25 V - - - Through Hole
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