Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXTT110N10L2MOSFET N-CH 100V 110A TO268 |
3992 | 21.05 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 18mOhm @ 55A, 10V | 4.5V @ 250µA | 260 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT36N90BC3GMOSFET N-CH 900V 36A TO247 |
2823 | 21.06 |
ДобавитьРасследования |
Tube | CoolMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 900 V | 36A (Tc) | 10V | 120mOhm @ 18A, 10V | 3.5V @ 2.9mA | 252 nC @ 10 V | ±20V | 7463 pF @ 25 V | Super Junction | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK24N100MOSFET N-CH 1KV 24A TO-264AA |
3984 | 21.11 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 267 nC @ 10 V | ±20V | 8700 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT8043SFLLGMOSFET N-CH 800V 20A D3PAK |
2930 | 21.15 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 20A (Tc) | - | 430mOhm @ 10A, 10V | 5V @ 1mA | 85 nC @ 10 V | - | 2500 pF @ 25 V | - | - | - | Surface Mount |
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Таблицы данных |
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IXFK170N20PMOSFET N-CH 200V 170A TO264AA |
2698 | 21.16 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 170A (Tc) | 10V | 14mOhm @ 500mA, 10V | 5V @ 1mA | 185 nC @ 10 V | ±20V | 11400 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NVH4L020N090SC1SIC MOSFET 900V TO247-4L |
2700 | 21.21 |
ДобавитьРасследования |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 116A (Tc) | 15V, 18V | 16mOhm @ 60A, 18V | 4.3V @ 20mA | 196 nC @ 15 V | +22V, -8V | 4415 pF @ 450 V | - | 484W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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APT10086BVFRGMOSFET N-CH 1000V 13A TO247 |
3407 | 21.25 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 13A (Tc) | - | 860mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFR44N50QMOSFET N-CH 500V 34A ISOPLUS247 |
2936 | 21.29 |
ДобавитьРасследования |
Tube | HiPerFET™, Q Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 34A (Tc) | 10V | 120mOhm @ 22A, 10V | 4V @ 4mA | 190 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFJ26N50P3MOSFET N-CH 500V 14A TO247 |
3009 | 21.43 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 265mOhm @ 13A, 10V | 5V @ 4mA | 42 nC @ 10 V | ±30V | 2220 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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MMIX1T660N04T4MOSFET N-CH 40V 660A 24SMPD |
2460 | 21.52 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 660A (Tc) | 10V | 0.85mOhm @ 100A, 10V | 4V @ 250µA | 860 nC @ 10 V | ±15V | 44000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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APT50M75B2LLGMOSFET N-CH 500V 57A T-MAX |
3489 | 21.86 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 57A (Tc) | 10V | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | ±30V | 5590 pF @ 25 V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT50M75LLLGMOSFET N-CH 500V 57A TO264 |
2065 | 21.86 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 57A (Tc) | - | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | - | 5590 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFR32N100PMOSFET N-CH 1000V 18A ISOPLUS247 |
3860 | 21.99 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 18A (Tc) | 10V | 340mOhm @ 16A, 10V | 6.5V @ 1mA | 225 nC @ 10 V | ±30V | 14200 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT6015LVRGMOSFET N-CH 600V 38A TO264 |
3105 | 22.04 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 38A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 2.5mA | 475 nC @ 10 V | - | 9000 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT20M20B2FLLGMOSFET N-CH 200V 100A T-MAX |
3946 | 22.10 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 20mOhm @ 50A, 10V | 5V @ 2.5mA | 110 nC @ 10 V | - | 6850 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT66F60LMOSFET N-CH 600V 70A TO264 |
2414 | 22.14 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT30M36B2FLLGMOSFET N-CH 300V 84A T-MAX |
2233 | 22.24 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 84A (Tc) | - | 36mOhm @ 42A, 10V | 5V @ 2.5mA | 115 nC @ 10 V | - | 6480 pF @ 25 V | - | - | - | Through Hole |
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IXKT70N60C5-TUBMOSFET N-CH 600V 68A TO268 |
3921 | 22.25 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 68A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount |
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Таблицы данных |
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APT50M75LFLLGMOSFET N-CH 500V 57A TO264 |
2908 | 22.31 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 57A (Tc) | - | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | - | 5590 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT48M80B2MOSFET N-CH 800V 49A T-MAX |
2776 | 22.34 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 49A (Tc) | 10V | 190mOhm @ 24A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9330 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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