Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXFK50N50MOSFET N-CH 500V 50A TO-264AA |
2196 | 20.17 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 50A (Tc) | 10V | 80mOhm @ 25A, 10V | 4.5V @ 8mA | 330 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT66M60B2MOSFET N-CH 600V 70A T-MAX |
2456 | 20.27 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 100mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFT44N50Q3MOSFET N-CH 500V 44A TO268 |
3693 | 20.28 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 6.5V @ 4mA | 93 nC @ 10 V | ±30V | 4800 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT60N60SCSG/TRMOSFET N-CH 600V 60A D3PAK |
3097 | 20.51 |
ДобавитьРасследования |
Tape & Reel (TR) | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190 nC @ 10 V | ±30V | 7200 pF @ 25 V | Super Junction | 431W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFX34N80MOSFET N-CH 800V 34A PLUS247 |
2404 | 20.51 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 800 V | 34A (Tc) | 10V | 240mOhm @ 17A, 10V | 5V @ 8mA | 270 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT6021SFLLGMOSFET N-CH 600V 29A D3PAK |
2731 | 20.52 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | - | 210mOhm @ 14.5A, 10V | 5V @ 1mA | 80 nC @ 10 V | - | 3470 pF @ 25 V | - | - | - | Surface Mount |
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Таблицы данных |
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IXTX600N04T2MOSFET N-CH 40V 600A PLUS247-3 |
2442 | 20.56 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 600A (Tc) | 10V | 1.5mOhm @ 100A, 10V | 3.5V @ 250µA | 590 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR16N120PMOSFET N-CH 1200V 9A ISOPLUS247 |
2016 | 20.61 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | 10V | 1.04Ohm @ 8A, 10V | 6.5V @ 1mA | 120 nC @ 10 V | ±30V | 6900 pF @ 25 V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTX550N055T2MOSFET N-CH 55V 550A PLUS247-3 |
2756 | 20.61 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 550A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 4V @ 250µA | 595 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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APT20M22LVRGMOSFET N-CH 200V 100A TO264 |
3731 | 20.68 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 10V | 22mOhm @ 500mA, 10V | 4V @ 2.5mA | 435 nC @ 10 V | ±30V | 10200 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SCT30N120D2SICFET N-CH 1200V 40A HIP247 |
2385 | 20.75 |
ДобавитьРасследования |
Tray | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 3.5V @ 1mA | 105 nC @ 20 V | +25V, -10V | 1700 pF @ 400 V | - | 270W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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IXTT140N075L2HV-TRDISC MOSFET N-CH LINEAR L2 TO-26 |
2733 | 20.77 |
ДобавитьРасследования |
Tape & Reel (TR) | LinearL2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 140A (Tc) | 10V | 11mOhm @ 70A, 10V | 4.5V @ 250µA | 275 nC @ 10 V | ±20V | 9300 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT1201R6SVFRGMOSFET N-CH 1200V 8A D3PAK |
2512 | 20.79 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 8A (Tc) | - | 1.6Ohm @ 4A, 10V | 4V @ 1mA | 230 nC @ 10 V | - | 3660 pF @ 25 V | - | - | - | Surface Mount |
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Таблицы данных |
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IXTK550N055T2MOSFET N-CH 55V 550A TO264 |
2359 | 20.82 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 550A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 4V @ 250µA | 595 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTK600N04T2MOSFET N-CH 40V 600A TO264 |
2260 | 20.82 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 600A (Tc) | 10V | 1.5mOhm @ 100A, 10V | 3.5V @ 250µA | 590 nC @ 10 V | ±20V | 40000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK420N10TMOSFET N-CH 100V 420A TO264AA |
2128 | 20.51 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 420A (Tc) | 10V | 2.6mOhm @ 60A, 10V | 5V @ 8mA | 670 nC @ 10 V | ±20V | 47000 pF @ 25 V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX170N20PMOSFET N-CH 200V 170A PLUS247-3 |
2223 | 20.95 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 170A (Tc) | 10V | 14mOhm @ 500mA, 10V | 5V @ 1mA | 185 nC @ 10 V | ±20V | 11400 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX250N10PMOSFET N-CH 100V 250A PLUS247-3 |
2333 | 20.95 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 250A (Tc) | 10V | 6.5mOhm @ 50A, 10V | 5V @ 1mA | 205 nC @ 10 V | ±20V | 16000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFT320N10T2MOSFET N-CH 100V 320A TO268 |
2996 | 20.99 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 320A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 250µA | 430 nC @ 10 V | ±20V | 26000 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTT60N20L2MOSFET N-CH 200V 60A TO268 |
3000 | 21.05 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 250µA | 255 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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