Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT6017LFLLGMOSFET N-CH 600V 35A TO264 |
3211 | 19.00 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 170mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX24N100MOSFET N-CH 1000V 24A PLUS 247 |
2323 | 19.07 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 267 nC @ 10 V | ±20V | 8700 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT5010B2VRGMOSFET N-CH 500V 47A T-MAX |
2534 | 19.11 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 47A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXTH30N25L2MOSFET N-CH 250V 30A TO247 |
3704 | 19.26 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 30A (Tc) | 10V | 140mOhm @ 15A, 10V | 4.5V @ 250µA | 130 nC @ 10 V | ±20V | 3200 pF @ 25 V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT84M50B2MOSFET N-CH 500V 84A T-MAX |
2915 | 19.37 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT6021BFLLGMOSFET N-CH 600V 29A TO247 |
3464 | 19.40 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | - | 210mOhm @ 14.5A, 10V | 5V @ 1mA | 80 nC @ 10 V | - | 3470 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFR24N100MOSFET N-CH 1KV 22A ISOPLUS247 |
2575 | 19.50 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 22A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 267 nC @ 10 V | ±20V | 8700 pF @ 25 V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT1201R6BVFRGMOSFET N-CH 1200V 8A TO247 |
2483 | 19.70 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 8A (Tc) | - | 1.6Ohm @ 4A, 10V | 4V @ 1mA | 230 nC @ 10 V | - | 3660 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT24M120LMOSFET N-CH 1200V 24A TO264 |
2691 | 19.73 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 24A (Tc) | 10V | 680mOhm @ 12A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8370 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX26N90MOSFET N-CH 900V 26A PLUS 247 |
2005 | 19.74 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 900 V | 26A (Tc) | 10V | 300mOhm @ 13A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±20V | 10800 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTT38N30L2HVMOSFET N-CH 300V 38A TO268HV |
3953 | 19.78 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 38A (Tc) | 10V | 100mOhm @ 19A, 10V | 4.5V @ 250µA | 260 nC @ 10 V | ±20V | 7200 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT10086BVRGMOSFET N-CH 1000V 13A TO247 |
3751 | 19.79 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 13A (Tc) | - | 860mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 4440 pF @ 25 V | - | - | - | Through Hole |
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IXTA4N150HV-TRLMOSFET N-CH 1500V 4A TO263HV |
2895 | 19.86 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Tc) | 10V | 6Ohm @ 2A, 10V | 5V @ 250µA | 44.5 nC @ 10 V | ±30V | 1576 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXFH240N15X3MOSFET N-CH 150V 240A TO247 |
3223 | 19.92 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 240A (Tc) | 10V | 5.4mOhm @ 120A, 10V | 4.5V @ 4mA | 150 nC @ 10 V | ±20V | 9580 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT66M60LMOSFET N-CH 600V 70A TO264 |
3429 | 19.92 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 190mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT8043BFLLGMOSFET N-CH 800V 20A TO247 |
3477 | 20.06 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 20A (Tc) | - | 430mOhm @ 10A, 10V | 5V @ 1mA | 85 nC @ 10 V | - | 2500 pF @ 25 V | - | - | - | Through Hole |
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IXKT70N60C5-TRLMOSFET P-CH 600V 68A TO-268 |
3098 | 20.09 |
ДобавитьРасследования |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IXTR32P60PMOSFET P-CH 600V 18A ISOPLUS247 |
3060 | 20.11 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 385mOhm @ 16A, 10V | 4V @ 1mA | 196 nC @ 10 V | ±20V | 11100 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTR40P50PMOSFET P-CH 500V 22A ISOPLUS247 |
2004 | 20.11 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 260mOhm @ 20A, 10V | 4V @ 1mA | 205 nC @ 10 V | ±20V | 11500 pF @ 25 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTR90P20PMOSFET P-CH 200V 53A ISOPLUS247 |
2842 | 20.11 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 53A (Tc) | 10V | 48mOhm @ 45A, 10V | 4V @ 1mA | 205 nC @ 10 V | ±20V | 12000 pF @ 25 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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