Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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IXFX64N50PMOSFET N-CH 500V 64A PLUS247-3 |
2443 | 18.10 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 64A (Tc) | 10V | 85mOhm @ 32A, 10V | 5.5V @ 8mA | 150 nC @ 10 V | ±30V | 8700 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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PCFD18N20WDIE MOSFET N-CH 200V UNIFET |
3382 | 18.15 |
ДобавитьРасследования |
Tray | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IXFK90N60XMOSFET N-CH 600V 90A TO264 |
3656 | 18.24 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 90A (Tc) | 10V | 38mOhm @ 45A, 10V | 4.5V @ 8mA | 210 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT41M80B2MOSFET N-CH 800V 43A T-MAX |
2131 | 18.25 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 43A (Tc) | 10V | 210mOhm @ 20A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8070 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR120N20MOSFET N-CH 200V 105A ISOPLUS247 |
3688 | 18.27 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 105A (Tc) | 10V | 17mOhm @ 60A, 10V | 4V @ 8mA | 360 nC @ 10 V | ±20V | 9100 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT6021BLLGMOSFET N-CH 600V 29A TO247 |
2047 | 18.34 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | - | 210mOhm @ 14.5A, 10V | 5V @ 1mA | 80 nC @ 10 V | - | 3470 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFH70N30Q3MOSFET N-CH 300V 70A TO247AD |
3172 | 18.35 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 70A (Tc) | 10V | 54mOhm @ 35A, 10V | 6.5V @ 4mA | 98 nC @ 10 V | ±20V | 4735 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK90N30MOSFET N-CH 300V 90A TO-264 |
3720 | 18.44 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 300 V | 90A (Tc) | 10V | 33mOhm @ 45A, 10V | 4V @ 8mA | 360 nC @ 10 V | ±20V | 10000 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFT150N20TMOSFET N-CH 200V 150A TO268 |
3085 | 18.49 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 150A (Tc) | 10V | 15mOhm @ 75A, 10V | 5V @ 4mA | 177 nC @ 10 V | ±20V | 11700 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFT94N30TMOSFET N-CH 300V 94A TO268 |
2262 | 18.49 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 94A (Tc) | 10V | 36mOhm @ 47A, 10V | 5V @ 4mA | 190 nC @ 10 V | ±20V | 11400 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT10090SLLGMOSFET N-CH 1000V 12A D3PAK |
2058 | 18.55 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | - | 900mOhm @ 6A, 10V | 5V @ 1mA | 71 nC @ 10 V | - | 1969 pF @ 25 V | - | - | - | Surface Mount |
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Таблицы данных |
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IXFK180N15PMOSFET N-CH 150V 180A TO264AA |
3503 | 18.64 |
ДобавитьРасследования |
Bulk | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 180A (Tc) | 10V | 11mOhm @ 90A, 10V | 5V @ 4mA | 240 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR180N06MOSFET N-CH 60V 180A ISOPLUS247 |
3341 | 18.78 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 180A (Tc) | 10V | 5mOhm @ 90A, 10V | 4V @ 8mA | 420 nC @ 10 V | ±20V | 7650 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW40N90K5MOSFET N-CH 900V 40A TO247 |
2195 | 18.82 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 40A (Tc) | 10V | 99mOhm @ 20A, 10V | 5V @ 100µA | 89 nC @ 10 V | ±30V | 3260 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW60NM50NMOSFET N-CH 500V 68A TO247 |
2438 | 18.83 |
ДобавитьРасследования |
Tube | MDmesh™ II | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 68A (Tc) | 10V | 43mOhm @ 34A, 10V | 4V @ 250µA | 178 nC @ 10 V | ±25V | 5790 pF @ 100 V | - | 446W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVH4L018N075SC1SIC MOS TO247-4L 750V |
2953 | 18.83 |
ДобавитьРасследования |
Tray | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 140A (Tc) | 15V, 18V | 18mOhm @ 66A, 18V | 4.3V @ 22mA | 262 nC @ 18 V | +22V, -8V | 5010 pF @ 375 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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APT8043BLLGMOSFET N-CH 800V 20A TO247 |
2182 | 18.90 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 20A (Tc) | - | 430mOhm @ 5A, 10V | 5V @ 1mA | 85 nC @ 10 V | - | 2500 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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NTC040N120SC1SIC MOS WAFER SALES 40MOHM 1200V |
2048 | 18.93 |
ДобавитьРасследования |
Tray | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 56mOhm @ 35A, 20V | 4.3V @ 10mA | 106 nC @ 20 V | +25V, -15V | 1781 pF @ 800 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTQ60N20L2MOSFET N-CH 200V 60A TO3P |
3892 | 18.96 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 250µA | 255 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK26N90MOSFET N-CH 900V 26A TO-264 |
3693 | 19.00 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 900 V | 26A (Tc) | 10V | 300mOhm @ 13A, 10V | 5V @ 8mA | 240 nC @ 10 V | ±20V | 10800 pF @ 25 V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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