Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT75F50LMOSFET N-CH 500V 75A TO264 |
2332 | 16.90 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX32N90PMOSFET N-CH 900V 32A PLUS247-3 |
3353 | 16.98 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 32A (Tc) | 10V | 300mOhm @ 16A, 10V | 6.5V @ 1mA | 215 nC @ 10 V | ±30V | 10600 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT6025SVRGMOSFET N-CH 600V 25A D3PAK |
3768 | 17.05 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 5160 pF @ 25 V | - | - | - | Surface Mount |
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Таблицы данных |
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IXFH12N120PMOSFET N-CH 1200V 12A TO247AD |
2781 | 17.10 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 1.35Ohm @ 500mA, 10V | 6.5V @ 1mA | 103 nC @ 10 V | ±30V | 5400 pF @ 25 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT5016BFLLGMOSFET N-CH 500V 30A TO247 |
2600 | 17.11 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 160mOhm @ 15A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±30V | 2833 pF @ 25 V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT75F50B2MOSFET N-CH 500V 75A T-MAX |
2660 | 17.17 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFQ170N15X3DISCMSFT NCHULTRJNCTN X3CLASS TO |
3497 | 17.33 |
ДобавитьРасследования |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 170A (Tc) | 10V | 6.7mOhm @ 85A, 10V | 4.5V @ 4mA | 122 nC @ 10 V | ±20V | 7620 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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C3M0040120J1-TR1200V 40 M SIC MOSFET |
3508 | 24.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 64A (Tc) | 15V | 53.5mOhm @ 33.3A, 15V | 3.6V @ 9.2mA | 94 nC @ 15 V | +15V, -4V | 2900 pF @ 1000 V | - | 272W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT66F60B2MOSFET N-CH 600V 70A T-MAX |
3046 | 17.42 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 90mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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C3M0075120D-A75M 1200V 175C SIC FET |
2708 | 17.72 |
ДобавитьРасследования |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 32A (Tc) | 15V | 90mOhm @ 20A, 15V | 3.6V @ 5mA | 54 nC @ 15 V | +15V, -4V | 1390 pF @ 1000 V | - | 136W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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C3M0075120K-A75M 1200V 175C SIC FET |
2402 | 17.72 |
ДобавитьРасследования |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 32A (Tc) | 15V | 90mOhm @ 20A, 15V | 3.6V @ 5mA | 53 nC @ 15 V | +15V, -4V | 1390 pF @ 1000 V | - | 136W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR80N60P3MOSFET N-CH 600V 48A ISOPLUS247 |
3887 | 17.78 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 76mOhm @ 40A, 10V | 5V @ 8mA | 190 nC @ 10 V | ±30V | 13100 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTT75N10L2MOSFET N-CH 100V 75A TO268 |
3131 | 17.84 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 21mOhm @ 500mA, 10V | 4.5V @ 250µA | 215 nC @ 10 V | ±20V | 8100 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTT30N50L2MOSFET N-CH 500V 30A TO268 |
2228 | 17.84 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 4.5V @ 250µA | 240 nC @ 10 V | ±20V | 8100 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FMD21-05QCMOSFET N-CH 500V 21A I4PAC |
3480 | 17.87 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 21A (Tc) | 10V | 220mOhm @ 15A, 10V | 4.5V @ 250µA | 95 nC @ 10 V | ±20V | - | - | - | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STWA40N95K5MOSFET N-CH 950V 38A TO247-3 |
2566 | 17.89 |
ДобавитьРасследования |
Tube | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 38A (Tc) | 10V | 130mOhm @ 19A, 10V | 5V @ 100µA | 93 nC @ 10 V | ±30V | 3300 pF @ 100 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH140N075L2MOSFET N-CH 75V 140A TO247 |
2717 | 17.91 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 140A (Tc) | 10V | 11mOhm @ 70A, 10V | 4.5V @ 250µA | 275 nC @ 10 V | ±20V | 9300 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR180N10MOSFET N-CH 100V 165A ISOPLUS247 |
3144 | 17.93 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 165A (Tc) | 10V | 8mOhm @ 90A, 10V | 4V @ 8mA | 400 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX90N60XMOSFET N-CH 600V 90A PLUS247-3 |
3570 | 17.95 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 90A (Tc) | 10V | 38mOhm @ 45A, 10V | 4.5V @ 8mA | 210 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH10N100DMOSFET N-CH 1000V 10A TO247 |
2419 | 17.97 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10A (Tc) | 10V | 1.4Ohm @ 10A, 10V | 3.5V @ 250µA | 130 nC @ 10 V | ±30V | 2500 pF @ 25 V | Depletion Mode | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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