Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STP57N65M5

Таблицы данных

STP57N65M5

STP57N65M5

MOSFET N-CH 650V 42A TO220

STMicroelectronics

3063 11.85
- +

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Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 42A (Tc) 10V 63mOhm @ 21A, 10V 5V @ 250µA 98 nC @ 10 V ±25V 4200 pF @ 100 V - 250W (Tc) 150°C (TJ) Through Hole
STP34NM60ND

Таблицы данных

STP34NM60ND

STP34NM60ND

MOSFET N-CH 600V 29A TO220

STMicroelectronics

2098 11.87
- +

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Расследования

Tube FDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 110mOhm @ 14.5A, 10V 5V @ 250µA 80.4 nC @ 10 V ±25V 2785 pF @ 50 V - 190W (Tc) 150°C (TJ) Through Hole
IXFT50N50P3

Таблицы данных

IXFT50N50P3

IXFT50N50P3

MOSFET N-CH 500V 50A TO268

IXYS

2087 11.89
- +

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Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) 10V 120mOhm @ 25A, 10V 5V @ 4mA 85 nC @ 0 V ±30V 4335 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFPS37N50APBF IRFPS37N50APBF

IRFPS37N50APBF

MOSFET N-CH 500V 36A SUPER247

Infineon Technologies

2142 11.93
- +

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Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 130mOhm @ 22A, 10V 4V @ 250µA 180 nC @ 10 V ±30V 5579 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS43N50KPBF

Таблицы данных

IRFPS43N50KPBF

IRFPS43N50KPBF

MOSFET N-CH 500V 47A SUPER247

Vishay Siliconix

3924 11.93
- +

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Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) 10V 90mOhm @ 28A, 10V 5V @ 250µA 350 nC @ 10 V ±30V 8310 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5018SFLLG

Таблицы данных

APT5018SFLLG

APT5018SFLLG

MOSFET N-CH 500V 27A D3PAK

Microchip Technology

2449 11.95
- +

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Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 27A (Tc) - 180mOhm @ 13.5A, 10V 5V @ 1mA 58 nC @ 10 V - 2596 pF @ 25 V - - - Surface Mount
NDCTR40120A NDCTR40120A

NDCTR40120A

MOSFET N-CH 1200V 40A SMD

onsemi

3819 11.96
- +

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Tape & Reel (TR) - Active - - - - - - - - - - - - - -
APT1003RSFLLG/TR

Таблицы данных

APT1003RSFLLG/TR

APT1003RSFLLG/TR

MOSFET N-CH 1KV 4A D3PAK

Microchip Technology

3749 11.97
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3Ohm @ 2A, 10V 5V @ 1mA 34 nC @ 10 V ±30V 694 pF @ 25 V - 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
LSIC1MO120G0120

Таблицы данных

LSIC1MO120G0120

LSIC1MO120G0120

MOSFET SIC 1200V 18A TO247-4L

Littelfuse Inc.

3288 0.00
- +

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Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 27A (Tc) 20V 150mOhm @ 14A, 20V 4V @ 7mA 63 nC @ 20 V +22V, -6V 113 pF @ 800 V - 156W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT60N50P3

Таблицы данных

IXFT60N50P3

IXFT60N50P3

MOSFET N-CH 500V 60A TO268

IXYS

3191 12.02
- +

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Расследования

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 100mOhm @ 30A, 10V 5V @ 4mA 96 nC @ 10 V ±30V 6250 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH50N50P3

Таблицы данных

IXFH50N50P3

IXFH50N50P3

MOSFET N-CH 500V 50A TO247AD

IXYS

2091 12.02
- +

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Расследования

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) 10V 120mOhm @ 25A, 10V 5V @ 4mA 85 nC @ 10 V ±30V 4335 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH440N055T2

Таблицы данных

IXTH440N055T2

IXTH440N055T2

MOSFET N-CH 55V 440A TO247

IXYS

2884 12.03
- +

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Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 440A (Tc) 10V 1.8mOhm @ 100A, 10V 4V @ 250µA 405 nC @ 10 V ±20V 25000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVMYS1D7N04CT1G NVMYS1D7N04CT1G

NVMYS1D7N04CT1G

T6 40V SL AIZU SINGLE NCH LFPAK

onsemi

2145 12.04
- +

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Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 36.6A (Ta), 190A (Tc) 10V 1.7mOhm @ 50A, 10V 4V @ 210µA 50 nC @ 10 V ±20V 3125 pF @ 25 V - 3.9W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMYS1D6N04CLT1G NVMYS1D6N04CLT1G

NVMYS1D6N04CLT1G

T6 40V LL AIZU SINGLE NCH LFPAK

onsemi

2075 12.04
- +

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Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 4.5V, 10V 1.6mOhm @ 50A, 10V 3V @ 210µA 71 nC @ 10 V ±20V 4301 pF @ 25 V - 3.8W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT5020SVFRG

Таблицы данных

APT5020SVFRG

APT5020SVFRG

MOSFET N-CH 500V 26A D3PAK

Microchip Technology

3939 12.11
- +

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Расследования

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) - 200mOhm @ 500mA, 10V 4V @ 1mA 225 nC @ 10 V - 4440 pF @ 25 V - - - Surface Mount
APT13F120S

Таблицы данных

APT13F120S

APT13F120S

MOSFET N-CH 1200V 14A D3PAK

Microchip Technology

3469 12.11
- +

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Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 14A (Tc) 10V 1.2Ohm @ 7A, 10V 5V @ 1mA 145 nC @ 10 V ±30V 4765 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX32N80P

Таблицы данных

IXFX32N80P

IXFX32N80P

MOSFET N-CH 800V 32A PLUS247-3

IXYS

3527 12.12
- +

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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 32A (Tc) 10V 270mOhm @ 16A, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8800 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT24M80S

Таблицы данных

APT24M80S

APT24M80S

MOSFET N-CH 800V 25A D3PAK

Microchip Technology

3230 12.14
- +

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Расследования

Bulk POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 25A (Tc) 10V 390mOhm @ 12A, 10V 5V @ 1mA 150 nC @ 10 V ±30V 4595 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Surface Mount
APT1204R7SFLLG

Таблицы данных

APT1204R7SFLLG

APT1204R7SFLLG

MOSFET N-CH 1200V 3.5A D3PAK

Microchip Technology

3566 12.19
- +

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Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1200 V 3.5A (Tc) - 4.7Ohm @ 1.75A, 10V 5V @ 1mA 31 nC @ 10 V - 715 pF @ 25 V - - - Surface Mount
APT20M45SVRG

Таблицы данных

APT20M45SVRG

APT20M45SVRG

MOSFET N-CH 200V 56A D3PAK

Microchip Technology

2143 12.27
- +

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Расследования

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 200 V 56A (Tc) - 45mOhm @ 500mA, 10V 4V @ 1mA 195 nC @ 10 V - 4860 pF @ 25 V - - - Surface Mount
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