Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXFX170N20TMOSFET N-CH 200V 170A PLUS247-3 |
3434 | 12.97 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 170A (Tc) | 10V | 11mOhm @ 60A, 10V | 5V @ 4mA | 265 nC @ 10 V | ±20V | 19600 pF @ 25 V | - | 1150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX140N25TMOSFET N-CH 250V 140A PLUS247-3 |
2045 | 12.97 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 140A (Tc) | 10V | 17mOhm @ 60A, 10V | 5V @ 4mA | 255 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX120N30TMOSFET N-CH 300V 120A PLUS247-3 |
3923 | 12.97 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5V @ 4mA | 265 nC @ 10 V | ±20V | 20000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT6030BVRGMOSFET N-CH 600V 21A TO247 |
3482 | 12.99 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | - | 300mOhm @ 10.5A, 10V | 4V @ 1mA | 150 nC @ 10 V | - | 3750 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFJ80N25X3MOSFET N-CH 250V 44A ISO TO247-3 |
3153 | 13.02 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 44A (Tc) | 10V | 18mOhm @ 40A, 10V | 4.5V @ 1.5mA | 83 nC @ 10 V | ±20V | 5430 pF @ 25 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTJ6N150MOSFET N-CH 1500V 3A TO247 |
3639 | 13.03 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 3A (Tc) | 10V | 3.85Ohm @ 3A, 10V | 5V @ 250µA | 67 nC @ 10 V | ±30V | 2230 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT43M60LMOSFET N-CH 600V 45A TO264 |
2015 | 13.04 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT34M60BMOSFET N-CH 600V 36A TO247 |
3752 | 13.08 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT75M50B2MOSFET N-CH 500V 75A T-MAX |
3840 | 13.08 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK120N30TMOSFET N-CH 300V 120A TO264AA |
3943 | 13.14 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5V @ 4mA | 265 nC @ 10 V | ±20V | 20000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT43M60B2MOSFET N-CH 600V 45A T-MAX |
2196 | 13.22 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH30N50Q3MOSFET N-CH 500V 30A TO247AD |
3152 | 13.29 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 6.5V @ 4mA | 62 nC @ 10 V | ±20V | 3200 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTT500N04T2MOSFET N-CH 40V 500A TO268 |
3171 | 13.31 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 500A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 3.5V @ 250µA | 405 nC @ 10 V | ±20V | 25000 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFH60N60XMOSFET N-CH 600V 60A TO247 |
2401 | 13.31 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 55mOhm @ 30A, 10V | 4.5V @ 8mA | 143 nC @ 10 V | ±30V | 5800 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTX660N04T4DISC MSFT NCHTRENCHGATE-GEN4 TO- |
2491 | 13.31 |
ДобавитьРасследования |
Tube | Trench | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole |
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Таблицы данных |
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IXFH67N10MOSFET N-CH 100V 67A TO-247AD |
3254 | 13.35 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 67A (Tc) | 10V | 25mOhm @ 33.5A, 10V | 4V @ 4mA | 260 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX48N60PMOSFET N-CH 600V 48A PLUS247-3 |
2793 | 13.36 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 48A (Tc) | 10V | 135mOhm @ 500mA, 10V | 5V @ 8mA | 150 nC @ 10 V | ±30V | 8860 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFQ60N60XMOSFET N-CH 600V 60A TO3P |
2207 | 13.37 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 55mOhm @ 30A, 10V | 4.5V @ 8mA | 143 nC @ 10 V | ±30V | 5800 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT20M38SVRG/TRMOSFET N-CH 200V 67A D3PAK |
2654 | 13.38 |
ДобавитьРасследования |
Tape & Reel (TR) | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 67A (Tc) | 10V | 38mOhm @ 33.5A, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 6120 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT5015BVRGMOSFET N-CH 500V 32A TO247 |
2648 | 13.39 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | Through Hole |
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