Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STW63N65DM2MOSFET N-CH 650V 65A TO247 |
2518 | 9.69 |
ДобавитьРасследования |
Tube | FDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole |
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Таблицы данных |
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IXFT150N17T2MOSFET N-CH 175V 150A TO268HV |
2835 | 9.73 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 175 V | 150A (Tc) | 10V | 12mOhm @ 75A, 10V | 4.5V @ 1mA | 233 nC @ 10 V | ±20V | 14600 pF @ 25 V | - | 880W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFH96N20PMOSFET N-CH 200V 96A TO247AD |
2050 | 9.80 |
ДобавитьРасследования |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 96A (Tc) | 10V | 24mOhm @ 500mA, 10V | 5V @ 4mA | 145 nC @ 10 V | ±20V | 4800 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH160N15TMOSFET N-CH 150V 160A TO247 |
2618 | 9.81 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 160A (Tc) | 10V | 9.6mOhm @ 500mA, 10V | 5V @ 1mA | 160 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R075CPAFKSA1AUTOMOTIVE |
2587 | 9.84 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPDQ60R045CFD7XTMA1HIGH POWER_NEW PG-HDSOP-22 |
3080 | 9.89 |
ДобавитьРасследования |
Tape & Reel (TR) | CoolMOS™ | Active | - | MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | - | - | - | - | - | Surface Mount |
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Таблицы данных |
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SIHG64N65E-GE3MOSFET N-CH 650V 64A TO247AC |
3640 | 9.98 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 47mOhm @ 32A, 10V | 4V @ 250µA | 369 nC @ 10 V | ±30V | 7497 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW70N65M2MOSFET N-CH 650V 63A TO247-3 |
2959 | 9.99 |
ДобавитьРасследования |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 63A (Tc) | 10V | 46mOhm @ 31.5A, 10V | 4V @ 250µA | 117 nC @ 10 V | ±25V | 5140 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTT26N60PMOSFET N-CH 600V 26A TO268 |
3874 | 10.01 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 26A (Tc) | 10V | 270mOhm @ 500mA, 10V | 5V @ 250µA | 72 nC @ 10 V | ±30V | 4150 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFP6N120PMOSFET N-CH 1200V 6A TO220AB |
2493 | 10.02 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 6A (Tc) | 10V | 2.4Ohm @ 500mA, 10V | 5V @ 1mA | 92 nC @ 10 V | ±30V | 2830 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG61N65EF-GE3MOSFET N-CH 650V 64A TO247AC |
2843 | 10.07 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 47mOhm @ 30.5A, 10V | 4V @ 250µA | 371 nC @ 10 V | ±30V | 7407 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHW61N65EF-GE3MOSFET N-CH 650V 64A TO247AD |
2737 | 10.07 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 47mOhm @ 30.5A, 10V | 4V @ 250µA | 371 nC @ 10 V | ±30V | 7407 pF @ 100 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NDCTR30120AMOSFET N-CH 1200V 30A SMD |
3154 | 10.13 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NTMTS0D4N04CLTXGMOSFET N-CH 40V 79.8A 8DFNW |
3560 | 10.14 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 79.8A (Ta), 553.8A (Tc) | 4.5V, 10V | 0.4mOhm @ 50A, 10V | 2.5V @ 250µA | 341 nC @ 10 V | ±20V | 20600 pF @ 20 V | - | 5W (Ta), 244W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFH15N60MOSFET N-CH 600V 15A TO-247AD |
2338 | 10.15 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 500mOhm @ 500mA, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCH47N60-F085MOSFET N-CH 600V 47A TO247-3 |
3012 | 10.19 |
ДобавитьРасследования |
Tube,Tube | Automotive, AEC-Q101, SuperFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 79mOhm @ 47A, 10V | 5V @ 250µA | 250 nC @ 10 V | ±30V | 8000 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR4N100QMOSFET N-CH 1000V 3.5A ISOPLS247 |
2043 | 10.21 |
ДобавитьРасследования |
Box | HiPerFET™, Q Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3.5A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1.5mA | 39 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NVHL060N090SC1SICFET N-CH 900V 46A TO247-3 |
3178 | 10.21 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 46A (Tc) | 15V | 84mOhm @ 20A, 15V | 4.3V @ 5mA | 87 nC @ 15 V | +19V, -10V | 1770 pF @ 450 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STWA63N65DM2MOSFET N-CH 650V 60A TO247 |
3764 | 10.22 |
ДобавитьРасследования |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±25V | 5500 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH20N60MOSFET N-CH 600V 20A TO-247AD |
3286 | 10.26 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 350mOhm @ 10A, 10V | 4.5V @ 4mA | 170 nC @ 10 V | ±20V | 4500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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