Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT5018BFLLGMOSFET N-CH 500V 27A TO247 |
3499 | 10.84 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | - | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | - | 2596 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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LSIC1MO120G0160MOSFET SIC 1200V 14A TO247-4L |
2989 | 0.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 20V | 200mOhm @ 10A, 20V | 4V @ 5mA | 50 nC @ 20 V | +22V, -6V | 890 pF @ 800 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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TPH3206LSGANFET N-CH 600V 17A PQFN |
2822 | 10.85 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 600 V | 17A (Tc) | 10V | 180mOhm @ 11A, 8V | 2.6V @ 500µA | 9.3 nC @ 4.5 V | ±18V | 760 pF @ 480 V | - | 96W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTT50P10MOSFET P-CH 100V 50A TO268 |
2449 | 10.86 |
ДобавитьРасследования |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 50A (Tc) | 10V | 55mOhm @ 25A, 10V | 5V @ 250µA | 140 nC @ 10 V | ±20V | 4350 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTH52N65XMOSFET N-CH 650V 52A TO247 |
3278 | 10.86 |
ДобавитьРасследования |
Tube | Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 52A (Tc) | 10V | 68mOhm @ 26A, 10V | 5V @ 250µA | 113 nC @ 10 V | ±30V | 4350 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR20N80PMOSFET N-CH 800V 11A ISOPLUS247 |
3041 | 10.89 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 500mOhm @ 10A, 10V | 5V @ 4mA | 85 nC @ 10 V | ±30V | 4680 pF @ 25 V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDN340PMOSFET P-CH 20V 2A DIE |
3373 | 10.89 |
ДобавитьРасследования |
Tray | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 2.5V, 4.5V | 70mOhm @ 2A, 4.5V | 1.5V @ 250µA | 10 nC @ 4.5 V | ±8V | 779 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT6038BFLLGMOSFET N-CH 600V 17A TO247 |
3740 | 10.92 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | - | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43 nC @ 10 V | - | 1850 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXTQ44N50PMOSFET N-CH 500V 44A TO3P |
2581 | 10.95 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 5440 pF @ 25 V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTHL019N60S5FSUPERFET5 FRFET, 19MOHM, TO-247- |
3684 | 10.96 |
ДобавитьРасследования |
Tube | SuperFET® V, FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 75A (Tc) | 10V | 19mOhm @ 37.5A,10V | 4.8V @ 15.7mA | 252 nC @ 10 V | ±30V | 13400 pF @ 400 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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NDCTR15120AMOSFET N-CH 1200V 15A SMD |
2677 | 10.97 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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PCFQ17P10WDIE MOSFET P-CH 100V |
2334 | 11.00 |
ДобавитьРасследования |
Tray | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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APT24M80BMOSFET N-CH 800V 25A TO247 |
3640 | 11.04 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | 10V | 390mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4595 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA30N25L2MOSFET N-CH 250V 30A TO263 |
3196 | 11.05 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 30A (Tc) | 10V | 140mOhm @ 15A, 10V | 4.5V @ 250µA | 130 nC @ 10 V | ±20V | 3200 pF @ 25 V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT22F80SMOSFET N-CH 800V 23A D3PAK |
3059 | 11.10 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 23A (Tc) | 10V | 430mOhm @ 12A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4595 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFT69N30PMOSFET N-CH 300V 69A TO268 |
3709 | 11.13 |
ДобавитьРасследования |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 69A (Tc) | 10V | 49mOhm @ 500mA, 10V | 5V @ 4mA | 180 nC @ 10 V | ±20V | 4960 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFQ80N25X3MOSFET N-CH 250V 80A TO3P |
3367 | 11.14 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 80A (Tc) | 10V | 16mOhm @ 40A, 10V | 4.5V @ 1.5mA | 83 nC @ 10 V | ±20V | 5430 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR30N60PMOSFET N-CH 600V 15A ISOPLUS247 |
3709 | 11.16 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 250mOhm @ 15A, 10V | 5V @ 4mA | 85 nC @ 10 V | ±30V | 3820 pF @ 25 V | - | 166W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT34N80LC3GMOSFET N-CH 800V 34A TO264 |
2444 | 11.17 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 34A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355 nC @ 10 V | ±20V | 4510 pF @ 25 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH50N60XMOSFET N-CH 600V 50A TO247 |
3092 | 11.17 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 73mOhm @ 25A, 10V | 4.5V @ 4mA | 116 nC @ 10 V | ±30V | 4660 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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