Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT20M45BVRGMOSFET N-CH 200V 56A TO247 |
2130 | 11.18 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 56A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | ±30V | 4860 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT4014BVFRGMOSFET N-CH 400V 28A TO247 |
3372 | 11.21 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 28A (Tc) | - | 140mOhm @ 500mA, 10V | 4V @ 1mA | 160 nC @ 10 V | - | 3600 pF @ 25 V | - | - | - | Through Hole |
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IXTA6N100D2HVMOSFET N-CH 1000V 6A TO263HV |
2471 | 11.21 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 6A (Tj) | 0V | 2.2Ohm @ 3A, 0V | 4.5V @ 250µA | 95 nC @ 5 V | ±20V | 2650 pF @ 10 V | Depletion Mode | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFT24N80PMOSFET N-CH 800V 24A TO268 |
2241 | 11.33 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 24A (Tc) | 10V | 400mOhm @ 12A, 10V | 5V @ 4mA | 105 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 650W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STW70N65DM6-4MOSFET N-CH 650V 68A TO247-4 |
3788 | 11.33 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 68A (Tc) | 10V | 40mOhm @ 34A, 10V | 4.75V @ 250µA | 125 nC @ 10 V | ±25V | 4900 pF @ 100 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXKC23N60C5MOSFET N-CH 600V 23A ISOPLUS220 |
2220 | 11.35 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 23A (Tc) | 10V | 100mOhm @ 18A, 10V | 3.9V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTK120N20PMOSFET N-CH 200V 120A TO264 |
3736 | 11.38 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 120A (Tc) | 10V | 22mOhm @ 500mA, 10V | 5V @ 250µA | 152 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 714W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTK88N30PMOSFET N-CH 300V 88A TO264 |
2020 | 11.38 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 88A (Tc) | 10V | 40mOhm @ 44A, 10V | 5V @ 250µA | 180 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT17F100SMOSFET N-CH 1000V 17A D3PAK |
2890 | 11.45 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 17A (Tc) | 10V | 780mOhm @ 9A, 10V | 5V @ 1mA | 150 nC @ 10 V | ±30V | 4845 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT43F60B2MOSFET N-CH 600V 45A T-MAX |
2391 | 11.54 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT5018SFLLG/TRMOSFET N-CH 500V 27A D3PAK |
3285 | 11.55 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | 10V | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | ±30V | 2596 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT5016BLLGMOSFET N-CH 500V 30A TO247 |
3253 | 11.61 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 160mOhm @ 15A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±30V | 2833 pF @ 25 V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT42F50SMOSFET N-CH 500V 42A D3PAK |
2411 | 11.62 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 42A (Tc) | 10V | 130mOhm @ 21A, 10V | 5V @ 1mA | 170 nC @ 10 V | ±30V | 6810 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXFT80N65X2HV-TRLMOSFET N-CH 650V 80A TO268HV |
2295 | 11.63 |
ДобавитьРасследования |
Tape & Reel (TR) | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 80A (Tc) | 10V | 38mOhm @ 40A, 10V | 5V @ 4mA | 140 nC @ 10 V | ±30V | 8300 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT5020SVFRG/TRMOSFET N-CH 500V 26A D3PAK |
2241 | 11.69 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 4440 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFT40N85XHVMOSFET N-CH 850V 40A TO268 |
2322 | 11.70 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 40A (Tc) | 10V | 145mOhm @ 500mA, 10V | 5.5V @ 4mA | 98 nC @ 10 V | ±30V | 3700 pF @ 25 V | - | 860W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT5018SLLGMOSFET N-CH 500V 27A D3PAK |
2885 | 11.74 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | - | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | - | 2596 pF @ 25 V | - | - | - | Surface Mount |
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Таблицы данных |
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IXFR24N80PMOSFET N-CH 800V 13A ISOPLUS247 |
3458 | 11.75 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 420mOhm @ 12A, 10V | 5V @ 4mA | 105 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT56M50B2MOSFET N-CH 500V 56A T-MAX |
2635 | 11.78 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT6038SLLGMOSFET N-CH 600V 17A D3PAK |
2800 | 11.81 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | - | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43 nC @ 10 V | - | 1850 pF @ 25 V | - | - | - | Surface Mount |
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