Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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APT10M25BVRGMOSFET N-CH 100V 75A TO247 |
3136 | 10.26 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | - | 25mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 5160 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXTH360N055T2MOSFET N-CH 55V 360A TO247 |
3822 | 10.29 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 360A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 250µA | 330 nC @ 10 V | ±20V | 20000 pF @ 25 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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APT1003RSLLGMOSFET N-CH 1000V 4A D3PAK |
3705 | 10.33 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | - | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | - | 694 pF @ 25 V | - | - | - | Surface Mount |
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IXFT70N65X3HVMOSFET 70A 650V X3 TO268HV |
3056 | 10.43 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NTC080N120SC1SIC MOS WAFER SALES 80MOHM 1200V |
2166 | 10.43 |
ДобавитьРасследования |
Tray | - | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 20V | 110mOhm @ 20A, 20V | 4.3V @ 5mA | 56 nC @ 20 V | +25V, -15V | 1112 pF @ 800 V | - | 178W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTK170N10PMOSFET N-CH 100V 170A TO264 |
3661 | 10.45 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 9mOhm @ 500mA, 10V | 5V @ 250µA | 198 nC @ 10 V | ±20V | 6000 pF @ 25 V | - | 715W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STW75N60M6MOSFET N-CH 600V 72A TO247 |
3806 | 10.46 |
ДобавитьРасследования |
Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 72A (Tc) | 10V | 36mOhm @ 36A, 10V | 4.75V @ 250µA | 106 nC @ 10 V | ±25V | 4850 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFJ20N85XMOSFET N-CH 850V 9.5A ISO TO247 |
2050 | 10.56 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 9.5A (Tc) | 10V | 360mOhm @ 10A, 10V | 5.5V @ 2.5mA | 63 nC @ 10 V | ±30V | 1660 pF @ 25 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXKC20N60CMOSFET N-CH 600V 15A ISOPLUS220 |
2829 | 10.57 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 190mOhm @ 16A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTF200N10TMOSFET N-CH 100V 90A I4PAC |
3994 | 10.61 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 10V | 7mOhm @ 50A, 10V | 4.5V @ 250µA | 152 nC @ 10 V | ±30V | 9400 pF @ 25 V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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STW70N65DM6MOSFET N-CH 650V 68A TO247 |
3486 | 10.66 |
ДобавитьРасследования |
Tube | MDmesh™ DM6 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 68A (Tc) | 10V | 40mOhm @ 34A, 10V | 4.75V @ 250µA | 125 nC @ 10 V | ±25V | 4900 pF @ 100 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFT20N100PMOSFET N-CH 1000V 20A TO268 |
3449 | 10.68 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 20A (Tc) | 10V | 570mOhm @ 10A, 10V | 6.5V @ 1mA | 126 nC @ 10 V | ±30V | 7300 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT5018SLLG/TRMOSFET N-CH 500V 27A D3PAK |
2786 | 10.70 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 27A (Tc) | 10V | 180mOhm @ 13.5A, 10V | 5V @ 1mA | 58 nC @ 10 V | ±30V | 2596 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT6038BLLGMOSFET N-CH 600V 17A TO247 |
3581 | 10.73 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | - | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43 nC @ 10 V | - | 1850 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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IXFT36N60PMOSFET N-CH 600V 36A TO268 |
3548 | 10.73 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 18A, 10V | 5V @ 4mA | 102 nC @ 10 V | ±30V | 5800 pF @ 25 V | - | 650W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TK62N60W5,S1VFPB-F POWER MOSFET TRANSISTOR TO- |
2996 | 10.58 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61.8A (Ta) | 10V | 45mOhm @ 30.9A, 10V | 4.5V @ 3.1mA | 205 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | 150°C | Through Hole |
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Таблицы данных |
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IXTT69N30PMOSFET N-CH 300V 69A TO268 |
2336 | 10.76 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 69A (Tc) | 10V | 49mOhm @ 500mA, 10V | 5V @ 250µA | 180 nC @ 10 V | ±20V | 4960 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXFT88N30P-TRLMOSFET N-CH 300V 88A TO268 |
2691 | 10.80 |
ДобавитьРасследования |
Tape & Reel (TR) | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 88A (Tc) | 10V | 40mOhm @ 44A, 10V | 5V @ 4mA | 180 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXTH2N150DISCMOSFET N-CH STD-HIVOLTAGE TO |
2448 | 10.81 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 2A (Tc) | 10V | 9.2Ohm @ 500mA, 10V | 5V @ 250µA | 28 nC @ 10 V | ±30V | 830 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTQ48N65X2MDISCRETE MOSFET 48A 650V X2 TO3P |
2169 | 10.83 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 48A (Tc) | 10V | 65mOhm @ 24A, 10V | 5V @ 250µA | 76 nC @ 10 V | ±30V | 4300 pF @ 25 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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