Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXFT30N50PMOSFET N-CH 500V 30A TO268 |
2017 | 12.34 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 5V @ 4mA | 70 nC @ 10 V | ±30V | 4150 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTR16P60PMOSFET P-CH 600V 10A ISOPLUS247 |
3656 | 12.40 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | 10V | 790mOhm @ 8A, 10V | 4.5V @ 250µA | 92 nC @ 10 V | ±20V | 5120 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTR20P50PMOSFET P-CH 500V 13A ISOPLUS247 |
2229 | 12.40 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 490mOhm @ 10A, 10V | 4.5V @ 250µA | 103 nC @ 10 V | ±20V | 5120 pF @ 25 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX220N17T2MOSFET N-CH 170V 220A PLUS247-3 |
2175 | 12.40 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 170 V | 220A (Tc) | 10V | 6.3mOhm @ 60A, 10V | 5V @ 8mA | 500 nC @ 10 V | ±20V | 31000 pF @ 25 V | - | 1250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
| |
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APT1003RSFLLGMOSFET N-CH 1000V 4A D3PAK |
2190 | 12.42 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | - | 3Ohm @ 2A, 10V | 5V @ 1mA | 34 nC @ 10 V | - | 694 pF @ 25 V | - | - | - | Surface Mount |
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Таблицы данных |
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IXFT60N65X2HVMOSFET N-CH 650V 60A TO268HV |
2217 | 12.54 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 52mOhm @ 30A, 10V | 5V @ 4mA | 108 nC @ 10 V | ±30V | 6300 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT10M19BVRGMOSFET N-CH 100V 75A TO247 |
2426 | 12.63 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | - | 19mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 6120 pF @ 25 V | - | - | - | Through Hole |
| |
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IXFT24N90P-TRLMOSFET N-CH 900V 24A TO268 |
3557 | 12.65 |
ДобавитьРасследования |
Tape & Reel (TR) | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 24A (Tc) | 10V | 420mOhm @ 12A, 10V | 6.5V @ 1mA | 130 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFR36N50PMOSFET N-CH 500V 19A ISOPLUS247 |
3980 | 12.66 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 19A (Tc) | 10V | 190mOhm @ 18A, 10V | 5V @ 4mA | 93 nC @ 10 V | ±30V | 5500 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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IXFH120N25TMOSFET N-CH 250V 120A TO247AD |
2508 | 12.69 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 120A (Tc) | 10V | 23mOhm @ 60A, 10V | 5V @ 4mA | 180 nC @ 10 V | ±20V | 11300 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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IXFH94N30TMOSFET N-CH 300V 94A TO247AD |
3870 | 12.69 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 94A (Tc) | 10V | 36mOhm @ 47A, 10V | 5V @ 4mA | 190 nC @ 10 V | ±20V | 11400 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT20M45BVFRGMOSFET N-CH 200V 56A TO247 |
3824 | 12.69 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 56A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | ±30V | 4860 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT5017BVRGMOSFET N-CH 500V 30A TO247 |
3511 | 12.79 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | - | 170mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | Through Hole |
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APT1201R6BVRGMOSFET N-CH 1200V 8A TO-247 |
2083 | 12.85 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
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IPDQ60R035CFD7XTMA1HIGH POWER_NEW PG-HDSOP-22 |
3883 | 12.71 |
ДобавитьРасследования |
Tape & Reel (TR) | CoolMOS™ | Active | - | MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | - | - | - | - | - | Surface Mount |
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Таблицы данных |
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IXFR18N90PMOSFET N-CH 900V 10.5A ISOPLS247 |
3165 | 12.88 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 10.5A (Tc) | 10V | 660mOhm @ 9A, 10V | 6V @ 1mA | 97 nC @ 10 V | ±30V | 5230 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFT88N30PMOSFET N-CH 300V 88A TO268 |
2174 | 12.88 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 88A (Tc) | 10V | 40mOhm @ 44A, 10V | 5V @ 4mA | 180 nC @ 10 V | ±20V | 6300 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTH64N65XMOSFET N-CH 650V 64A TO247 |
3378 | 12.91 |
ДобавитьРасследования |
Tube | Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 64A (Tc) | 10V | 51mOhm @ 32A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±30V | 5500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFQ94N30P3MOSFET N-CH 300V 94A TO3P |
2369 | 12.93 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 94A (Tc) | 10V | 36mOhm @ 47A, 10V | 5V @ 4mA | 102 nC @ 10 V | ±20V | 5510 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH10N100MOSFET N-CH 1KV 10A TO-247AD |
3708 | 12.96 |
ДобавитьРасследования |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10A (Tc) | 10V | 1.2Ohm @ 5A, 10V | 4.5V @ 4mA | 155 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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