Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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APT43F60LMOSFET N-CH 600V 45A TO264 |
3279 | 13.41 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP30N25L2MOSFET N-CH 250V 30A TO220AB |
2450 | 13.44 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 30A (Tc) | 10V | 140mOhm @ 15A, 10V | 4.5V @ 250µA | 130 nC @ 10 V | ±20V | 3200 pF @ 25 V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT31M100B2MOSFET N-CH 1000V 32A T-MAX |
2414 | 13.46 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 32A (Tc) | 10V | 380mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTT10N100D2MOSFET N-CH 1000V 10A TO268 |
2722 | 13.48 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10A (Tc) | 10V | 1.5Ohm @ 5A, 10V | - | 200 nC @ 5 V | ±20V | 5320 pF @ 25 V | Depletion Mode | 695W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT8065BVRGMOSFET N-CH 800V 13A TO247 |
2366 | 13.52 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | - | 650mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 3700 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT5017BVFRGMOSFET N-CH 500V 30A TO247 |
3663 | 13.54 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | - | 170mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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APT34M60S/TRMOSFET N-CH 600V 36A D3PAK |
3218 | 13.55 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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APT56F50LMOSFET N-CH 500V 56A TO264 |
3100 | 13.60 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA64N10L2MOSFET N-CH 100V 64A TO263AA |
3847 | 13.63 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 64A (Tc) | 10V | 32mOhm @ 500mA, 10V | 4.5V @ 250µA | 100 nC @ 10 V | ±30V | 3620 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTA80N075L2MOSFET N-CH 75V 80A TO263AA |
3936 | 13.63 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 80A (Tc) | 10V | 24mOhm @ 40A, 10V | 4.5V @ 250µA | 103 nC @ 10 V | ±20V | 3600 pF @ 25 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTA15N50L2MOSFET N-CH 500V 15A TO263 |
2138 | 13.76 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 4.5V @ 250µA | 123 nC @ 10 V | ±20V | 4080 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
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APT1201R4BLLGMOSFET N-CH 1200V 9A TO247 |
2882 | 13.76 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | 10V | 1.4Ohm @ 4.5A, 10V | 5V @ 1mA | 120 nC @ 10 V | ±30V | 2500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT20M45SVFRGMOSFET N-CH 200V 56A D3PAK |
3996 | 13.81 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 56A (Tc) | - | 45mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | - | 4860 pF @ 25 V | - | - | - | Surface Mount |
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Таблицы данных |
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APT6029BFLLGMOSFET N-CH 600V 21A TO247 |
3336 | 13.82 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | - | 290mOhm @ 10.5A, 10V | 5V @ 1mA | 65 nC @ 10 V | - | 2615 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT5015BVFRGMOSFET N-CH 500V 32A TO247 |
2689 | 13.86 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 32A (Tc) | - | 150mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | Through Hole |
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Таблицы данных |
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STWA70N60DM6MOSFET N-CH 600V 62A TO247 |
3173 | 13.87 |
ДобавитьРасследования |
Tube | MDmesh™ DM6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 62A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole |
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Таблицы данных |
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IXTQ30N50L2MOSFET N-CH 500V 30A TO3P |
3439 | 13.88 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 200mOhm @ 15A, 10V | 4.5V @ 250µA | 240 nC @ 10 V | ±20V | 8100 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT5017SVRGMOSFET N-CH 500V 30A D3PAK |
3128 | 13.88 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | - | 170mOhm @ 500mA, 10V | 4V @ 1mA | 300 nC @ 10 V | - | 5280 pF @ 25 V | - | - | - | Surface Mount |
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NDCTR50120AMOSFET N-CH 1200V 50A SMD |
3323 | 14.08 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IXFK120N25PMOSFET N-CH 250V 120A TO264AA |
3231 | 14.19 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 120A (Tc) | 10V | 24mOhm @ 60A, 10V | 5V @ 4mA | 185 nC @ 10 V | ±20V | 8000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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