Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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FCH099N65S3-F155MOSFET N-CH 650V 30A TO247-3 |
3295 | 5.40 |
ДобавитьРасследования |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.5V @ 3mA | 61 nC @ 10 V | ±30V | 2480 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA3N100D2HVMOSFET N-CH 1000V 3A TO263HV |
2600 | 5.40 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3A (Tj) | 0V | 6Ohm @ 1.5A, 0V | 4.5V @ 250µA | 37.5 nC @ 5 V | ±20V | 1020 pF @ 25 V | Depletion Mode | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FCP170N60MOSFET N-CH 600V 22A TO220-3 |
3114 | 5.41 |
ДобавитьРасследования |
Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 170mOhm @ 11A, 10V | 3.5V @ 250µA | 55 nC @ 10 V | ±20V | 2860 pF @ 380 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP24N65X2MOSFET N-CH 650V 24A TO220AB |
3773 | 6.00 |
ДобавитьРасследования |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 2060 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP76N25TMOSFET N-CH 250V 76A TO220AB |
3521 | 6.08 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 76A (Tc) | 10V | 39mOhm @ 500mA, 10V | 5V @ 1mA | 92 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW65R155CFD7XKSA1HIGH POWER_NEW |
2284 | 6.16 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 155mOhm @ 6.4A, 10V | 4.5V @ 320µA | 28 nC @ 10 V | ±20V | 1283 pF @ 400 V | - | 77W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP330P10NMAKSA1TRENCH >=100V PG-TO220-3 |
2860 | 6.16 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.9A (Ta), 62A (Tc) | 10V | 33mOhm @ 53A, 10V | 4V @ 5.55mA | 236 nC @ 10 V | ±20V | 11000 pF @ 50 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IMBG120R350M1HXTMA1SICFET N-CH 1.2KV 4.7A TO263 |
3447 | 9.71 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 4.7A (Tc) | - | 468mOhm @ 2A, 18V | 5.7V @ 1mA | 5.9 nC @ 18 V | +18V, -15V | 196 pF @ 800 V | Standard | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SUM60061EL-GE3P-CHANNEL 80 V (D-S) MOSFET D2PA |
2653 | 6.21 |
ДобавитьРасследования |
Bulk | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 150A (Tc) | 4.5V, 10V | 6.1mOhm @ 20A, 10V | 2.5V @ 250µA | 218 nC @ 10 V | ±20V | 9600 pF @ 40 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPTG210N25NM3FDATMA1TRENCH >=100V PG-HSOG-8 |
2926 | 10.17 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 7.7A (Ta), 77A (Tc) | 10V | 21mOhm @ 69A, 10V | 4V @ 267µA | 81 nC @ 10 V | ±20V | 7000 pF @ 125 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STP80N240K6N-CHANNEL 800 V, 197 MOHM TYP. |
2428 | 20.00 |
ДобавитьРасследования |
Tube | MDmesh™ K6 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 16A (Tc) | 10V | 220mOhm @ 7A, 10V | 4V @ 100µA | 25.9 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | |
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Таблицы данных |
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IPP60R125P6XKSA1MOSFET N-CH 600V 30A TO220-3 |
2671 | 6.29 |
ДобавитьРасследования |
Tube | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCH110N65F-F155MOSFET N-CH 650V 35A TO247 |
2576 | 5.65 |
ДобавитьРасследования |
Tube | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 110mOhm @ 17.5A, 10V | 5V @ 3.5mA | 145 nC @ 10 V | ±20V | 4895 pF @ 100 V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IMBG65R107M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- |
2870 | 10.39 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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SQW33N65EF-GE3E SERIES POWER MOSFET WITH FAST |
2619 | 6.49 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, E | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 34A (Tc) | 10V | 109mOhm @ 16.5A, 10V | 4V @ 250µA | 173 nC @ 10 V | ±30V | 3972 pF @ 100 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTHL095N65S3HPOWER MOSFET, N-CHANNEL, SUPERFE |
450 | 6.53 |
ДобавитьРасследования |
Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 95mOhm @ 15A, 10V | 4V @ 2.8mA | 58 nC @ 10 V | ±30V | 2833 pF @ 400 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPP65R110CFD7XKSA1HIGH POWER_NEW |
2484 | 6.60 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 22A (Tc) | 10V | 110mOhm @ 9.7A, 10V | 4.5V @ 480µA | 41 nC @ 10 V | ±20V | 1942 pF @ 400 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHB053N60E-GE3E SERIES POWER MOSFET D2PAK (TO- |
2563 | 6.62 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 54mOhm @ 26.5A, 10V | 5V @ 250µA | 92 nC @ 10 V | ±30V | 3722 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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STWA30N65DM6AGMOSFET N-CH 650V 28A TO247 |
2906 | 6.65 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 4.75V @ 250µA | 46 nC @ 10 V | ±25V | 2000 pF @ 100 V | - | 284W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHB055N60EF-GE3EF SERIES POWER MOSFET WITH FAST |
3365 | 6.75 |
ДобавитьРасследования |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 46A (Tc) | 10V | 55mOhm @ 26.5A, 10V | 5V @ 250µA | 95 nC @ 10 V | ±30V | 3707 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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