Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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NTMFS08N003CMOSFET N-CH 80V 22A/147A POWER56 |
3104 | 4.99 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 22A (Ta), 147A (Tc) | 6V, 10V | 3.1mOhm @ 56A, 10V | 4V @ 310µA | 73 nC @ 10 V | ±20V | 5350 pF @ 40 V | - | 2.7W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTH12N65X2MOSFET N-CH 650V 12A TO247-3 |
3817 | 5.35 |
ДобавитьРасследования |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 5V @ 250µA | 17 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW65R190CFD7AXKSA1MOSFET N-CH 650V 14A TO247-3 |
2941 | 5.36 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | - | 190mOhm @ 6.4A, 10V | 4.5V @ 320µA | 28 nC @ 10 V | ±20V | 1291 pF @ 400 V | - | 77W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFA130N10T2MOSFET N-CH 100V 130A TO263 |
3393 | 5.48 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 130A (Tc) | 10V | 9.1mOhm @ 65A, 10V | 4.5V @ 1mA | 130 nC @ 10 V | ±20V | 6600 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STL52N60DM6N-CHANNEL 600 V, 0.084 OHM TYP. |
278 | 278.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ DM6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 84mOhm @ 22.5A, 10V | 4.75V @ 250µA | 52 nC @ 10 V | ±25V | 2468 pF @ 100 V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | |
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Таблицы данных |
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IXTP1R4N120PMOSFET N-CH 1200V 1.4A TO220AB |
2140 | 5.52 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 1.4A (Tc) | 10V | 13Ohm @ 500mA, 10V | 4.5V @ 100µA | 24.8 nC @ 10 V | ±20V | 666 pF @ 25 V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDB1D7N10CL7MOSFET N-CH 100V 268A D2PAK |
2522 | 7.83 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 268A (Tc) | 6V, 15V | 1.65mOhm @ 100A, 15V | 4V @ 700µA | 163 nC @ 10 V | ±20V | 11600 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHK055N60E-T1-GE3E SERIES POWER MOSFET POWERPAK 1 |
2190 | 8.84 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 42A (Tc) | 10V | 56mOhm @ 16A, 10V | 5V @ 250µA | 81 nC @ 10 V | ±30V | 3504 pF @ 100 V | - | 236W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTP340N04T4MOSFET N-CH 40V 340A TO220AB |
2378 | 5.60 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 340A (Tc) | 10V | 1.9mOhm @ 100A, 10V | 4V @ 250µA | 256 nC @ 10 V | ±15V | 13000 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPDD60R080G7XTMA1MOSFET N-CH 600V 29A HDSOP-10 |
3383 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | CoolMOS™ G7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 80mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1640 pF @ 400 V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFP4110PBFXKMA1TRENCH >=100V PG-TO247-3 |
2347 | 5.62 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 9620 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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2SK1317-EMOSFET N-CH 1500V 2.5A TO3P |
3587 | 5.68 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 2.5A (Ta) | 15V | 12Ohm @ 2A, 15V | - | - | ±20V | 990 pF @ 10 V | - | 100W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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TSM60NC390CH C5G600V, 11A, SINGLE N-CHANNEL POWE |
2891 | 5.72 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 390mOhm @ 3.8A, 10V | 5V @ 1mA | 21.4 nC @ 10 V | ±20V | 818 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPTC015N10NM5ATMA1MOSFET N-CH 100V 35A/354A HDSOP |
3697 | 8.57 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Ta), 354A (Tc) | 6V, 10V | 1.5mOhm @ 100A, 10V | 3.8V @ 275µA | 208 nC @ 10 V | ±20V | 16000 pF @ 50 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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PJMH120N60EC_T0_00601600V/ 120MOHM / 30A/ EASY TO DRI |
3810 | 5.26 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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2SJ554-90-EP-CHANNEL POWER MOSFET |
3959 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPTG014N10NM5ATMA1MOSFET N-CH 100V 37A/366A HSOG-8 |
2364 | 9.42 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 37A (Ta), 366A (Tc) | 6V, 10V | 1.4mOhm @ 150A, 10V | 3.8V @ 280µA | 211 nC @ 10 V | ±20V | 16000 pF @ 50 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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RJK1001DPP-A0#T2MOSFET N-CH 100V 80A TO220FPA |
3943 | 5.89 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Ta) | 10V | 5.5mOhm @ 40A, 10V | 4V @ 1mA | 147 nC @ 10 V | ±20V | 10000 pF @ 10 V | - | 30W (Ta) | 150°C | Through Hole |
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Таблицы данных |
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STP23N80K5MOSFET N-CH 800V 16A TO220-3 |
2625 | 5.94 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 16A (Tc) | 10V | 280mOhm @ 8A, 10V | 5V @ 100µA | 33 nC @ 10 V | ±30V | 1000 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHK055N60EF-T1GE3E SERIES POWER MOSFET WITH FAST |
3039 | 9.46 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 58mOhm @ 16A, 10V | 5V @ 250µA | 90 nC @ 10 V | ±30V | 3667 pF @ 100 V | - | 236W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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