Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHK065N60E-T1-GE3 SIHK065N60E-T1-GE3

SIHK065N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix

2629 7.96
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® E Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 68mOhm @ 15A, 10V 5V @ 250µA 72 nC @ 10 V ±30V 2946 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUK3015

Таблицы данных

SUK3015

SUK3015

MOSFET WITH ZENER DIODE 300V/15A

Sanken

2757 5.03
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Tube - Active N-Channel MOSFET (Metal Oxide) 300 V 15A (Ta) 10V 150mOhm @ 7A, 10V 2.5V @ 1mA - ±25V 1800 pF @ 10 V - 89W (Tc) 150°C (TJ) Surface Mount
FCPF290N80

Таблицы данных

FCPF290N80

FCPF290N80

MOSFET N-CH 800V 17A TO220F

onsemi

2999 1.00
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Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 8.5A, 10V 4.5V @ 1.7mA 75 nC @ 10 V ±20V 3205 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP8440

Таблицы данных

FDP8440

FDP8440

MOSFET N-CH 40V 100A TO-220

onsemi

23680 4.82
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Bulk,Tube * Last Time Buy - - - - - - - - - - - - - -
SIHK075N60EF-T1GE3

Таблицы данных

SIHK075N60EF-T1GE3

SIHK075N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

3062 8.05
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® EF Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 71mOhm @ 15A, 10V 5V @ 250µA 72 nC @ 10 V ±30V 2954 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG24N80AEF-GE3 SIHG24N80AEF-GE3

SIHG24N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

3110 5.10
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Tube EF Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) 10V 195mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±30V 1889 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP18N65X2

Таблицы данных

IXFP18N65X2

IXFP18N65X2

MOSFET N-CH 650V 18A TO220AB

IXYS

2553 5.11
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Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 200mOhm @ 9A, 10V 5V @ 1.5mA 29 nC @ 10 V ±30V 1520 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R190CFDFKSA1

Таблицы данных

IPW65R190CFDFKSA1

IPW65R190CFDFKSA1

MOSFET N-CH 650V 17.5A TO247-3

Infineon Technologies

3434 5.13
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Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 730µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R190CFDFKSA2

Таблицы данных

IPW65R190CFDFKSA2

IPW65R190CFDFKSA2

MOSFET N-CH 650V 17.5A TO247-3

Infineon Technologies

3510 5.13
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Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT039N15N5ATMA1

Таблицы данных

IPT039N15N5ATMA1

IPT039N15N5ATMA1

OPTIMOS 5 POWER MOSFET

Infineon Technologies

3249 8.40
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 21A (Ta), 190A (Tc) 8V, 10V 3.9mOhm @ 50A, 10V 4.6V @ 257µA 98 nC @ 10 V ±20V 7700 pF @ 75 V - 3.8W (Ta), 319W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP15N60C3XKSA1

Таблицы данных

SPP15N60C3XKSA1

SPP15N60C3XKSA1

MOSFET N-CH 650V 15A TO220-3

Infineon Technologies

3713 5.16
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Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1660 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP42N25P

Таблицы данных

IXTP42N25P

IXTP42N25P

MOSFET N-CH 250V 42A TO220AB

IXYS

2358 4.87
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Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 42A (Tc) 10V 84mOhm @ 500mA, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2300 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTBS2D7N06M7

Таблицы данных

NTBS2D7N06M7

NTBS2D7N06M7

MOSFET N-CH 60V 110A D2PAK-3

onsemi

2821 4.88
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Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 10V 2.7mOhm @ 80A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6655 pF @ 30 V - 176W (Tj) -55°C ~ 175°C (TJ) Surface Mount
IPT013N08NM5LFATMA1

Таблицы данных

IPT013N08NM5LFATMA1

IPT013N08NM5LFATMA1

TRENCH 40<-<100V PG-HSOF-8

Infineon Technologies

2963 7.97
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 333A (Tc) 10V 1.3mOhm @ 150A, 10V 4.1V @ 250µA 158 nC @ 10 V ±20V 820 pF @ 40 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA1N120P

Таблицы данных

IXTA1N120P

IXTA1N120P

MOSFET N-CH 1200V 1A TO263

IXYS

2352 5.19
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Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1A (Tc) 10V 20Ohm @ 500mA, 10V 4.5V @ 50µA 17.6 nC @ 10 V ±20V 550 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPDD60R075CFD7XTMA1

Таблицы данных

IPDD60R075CFD7XTMA1

IPDD60R075CFD7XTMA1

MOSFET N-CH 600V 40A HDSOP-10

Infineon Technologies

2874 8.50
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) - 75mOhm @ 11.4A, 10V 4.5V @ 570µA 51 nC @ 10 V ±20V 2102 pF @ 400 V - 266W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STHU47N60DM6AG

Таблицы данных

STHU47N60DM6AG

STHU47N60DM6AG

AUTOMOTIVE-GRADE N-CHANNEL 600 V

STMicroelectronics

3311 7.52
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 80mOhm @ 18A, 10V 4.75V @ 250µA 55 nC @ 10 V ±25V 2350 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG080N60E-GE3

Таблицы данных

SIHG080N60E-GE3

SIHG080N60E-GE3

E SERIES POWER MOSFET TO-247AC

Vishay Siliconix

3933 0.00
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Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 80mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2557 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ)
IPA60R199CPXKSA1

Таблицы данных

IPA60R199CPXKSA1

IPA60R199CPXKSA1

MOSFET N-CH 650V 16A TO220-FP

Infineon Technologies

3732 1.00
- +

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Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 1.1mA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT015N10N5ATMA1

Таблицы данных

IPT015N10N5ATMA1

IPT015N10N5ATMA1

MOSFET N-CH 100V 300A 8HSOF

Infineon Technologies

2860 8.14
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 6V, 10V 1.5mOhm @ 150A, 10V 3.8V @ 250µA 211 nC @ 10 V ±20V 16000 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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