Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9143

Таблицы данных

IRF9143

IRF9143

MOSFET P-CH 80V 15A TO204AE

International Rectifier

3979 4.00
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Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 80 V 15A - - - - - - Standard 125W - Through Hole
NTMTSC1D5N08MC NTMTSC1D5N08MC

NTMTSC1D5N08MC

MOSFET N-CH 80V 33A/287A 8DFNW

onsemi

3461 7.41
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Dual Cool™ Active N-Channel MOSFET (Metal Oxide) 80 V 33A (Ta), 287A (Tc) 6V, 10V 1.56mOhm @ 80A, 10V 4V @ 650µA 140 nC @ 10 V ±20V 10400 pF @ 40 V - 3.3W (Ta), 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount, Wettable Flank
FCH165N65S3R0-F155

Таблицы данных

FCH165N65S3R0-F155

FCH165N65S3R0-F155

MOSFET N-CH 650V 19A TO247-3

onsemi

3773 4.05
- +

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Расследования

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4.5V @ 1.9mA 39 nC @ 10 V ±30V 1500 pF @ 400 V - 154W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP3N100P

Таблицы данных

IXTP3N100P

IXTP3N100P

MOSFET N-CH 1000V 3A TO220AB

IXYS

2483 4.58
- +

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Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK1002DPN-A0#T2

Таблицы данных

RJK1002DPN-A0#T2

RJK1002DPN-A0#T2

MOSFET N-CH 100V 70A TO220ABA

Renesas Electronics America Inc

3096 4.58
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Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Ta) 10V 7.6mOhm @ 35A, 10V 4V @ 1mA 94 nC @ 10 V ±20V 6450 pF @ 10 V - 150W (Ta) 150°C Through Hole
FDA20N50F

Таблицы данных

FDA20N50F

FDA20N50F

MOSFET N-CH 500V 22A TO3PN

onsemi

554 4.18
- +

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Tube,Tube FRFET®, UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 260mOhm @ 11A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 3390 pF @ 25 V - 388W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA1N100

Таблицы данных

IXTA1N100

IXTA1N100

MOSFET N-CH 1000V 1.5A TO263

IXYS

3673 4.21
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Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 1.5A (Tc) 10V 11Ohm @ 1A, 10V 4.5V @ 25µA 14.5 nC @ 10 V ±30V 400 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB47N50DM6AG STB47N50DM6AG

STB47N50DM6AG

AUTOMOTIVE-GRADE N-CHANNEL 500 V

STMicroelectronics

2031 4.61
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® * Active - - - - - - - - - - - - - Surface Mount
FDBL0150N60

Таблицы данных

FDBL0150N60

FDBL0150N60

MOSFET N-CH 60V 240A 8HPSOF

onsemi

2868 4.24
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10300 pF @ 30 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDB016N04AL7

Таблицы данных

FDB016N04AL7

FDB016N04AL7

MOSFET N-CH 40V 160A TO263-7

onsemi

2244 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk PowerTrench® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 80A, 10V 3V @ 250µA 167 nC @ 10 V ±20V 11600 pF @ 25 V - 283W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVB110N65S3F

Таблицы данных

NVB110N65S3F

NVB110N65S3F

MOSFET N-CH 650V 30A D2PAK-3

onsemi

2619 6.83
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 3mA 58 nC @ 10 V ±30V 2560 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF8D5N10C

Таблицы данных

FDPF8D5N10C

FDPF8D5N10C

MOSFET N-CH 100V 76A TO220F

onsemi

2360 4.28
- +

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Tube,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 76A (Tc) 10V 8.5mOhm @ 76A, 10V 4V @ 130µA 34 nC @ 10 V ±20V 2475 pF @ 50 V - 2.4W (Ta), 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA10N80C-F109

Таблицы данных

FQA10N80C-F109

FQA10N80C-F109

MOSFET N-CH 800V 10A TO3P

onsemi

3944 1.00
- +

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Расследования

Bulk,Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 2800 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS10N3D2C

Таблицы данных

NTMFS10N3D2C

NTMFS10N3D2C

MOSFET N-CH 100V 151A POWER56

onsemi

2641 8.04
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 151A (Tc) 6V, 10V 3.2mOhm @ 67A, 10V 4V @ 370µA 84 nC @ 10 V ±20V 6215 pF @ 50 V - 138W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA1R6N100D2HV

Таблицы данных

IXTA1R6N100D2HV

IXTA1R6N100D2HV

MOSFET N-CH 1000V 1.6A TO263HV

IXYS

3373 4.66
- +

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Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tj) 0V 10Ohm @ 800mA, 0V 4.5V @ 100µA 27 nC @ 5 V ±20V 645 pF @ 10 V Depletion Mode 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPL65R095CFD7AUMA1

Таблицы данных

IPL65R095CFD7AUMA1

IPL65R095CFD7AUMA1

COOLMOS CFD7 SUPERJUNCTION MOSFE

Infineon Technologies

2942 7.63
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 95mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 171W (Tc) -40°C ~ 150°C (TJ) Surface Mount
NTBGS004N10G

Таблицы данных

NTBGS004N10G

NTBGS004N10G

POWER MOSFET 203 AMPS, 100 VOLTS

onsemi

2589 7.20
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 21A (Ta), 203A (Tc) 10V 4.1mOhm @ 100A, 10V 4V @ 500µA 178 nC @ 10 V ±20V 12100 pF @ 50 V - 3.7W (Ta), 340W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW65R230CFD7AXKSA1

Таблицы данных

IPW65R230CFD7AXKSA1

IPW65R230CFD7AXKSA1

650V COOLMOS CFD7A SJ POWER DEVI

Infineon Technologies

2688 4.71
- +

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Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 230mOhm @ 5.2A, 10V 4.5V @ 260µA 23 nC @ 10 V ±20V 1044 pF @ 400 V - 63W (Tc) -40°C ~ 150°C (TJ) Through Hole
STB28NM50N

Таблицы данных

STB28NM50N

STB28NM50N

MOSFET N-CH 500V 21A D2PAK

STMicroelectronics

2121 4.74
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 158mOhm @ 10.5A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 1735 pF @ 25 V - 150W (Tc) 150°C (TJ) Surface Mount
IPA60R120P7XKSA1

Таблицы данных

IPA60R120P7XKSA1

IPA60R120P7XKSA1

MOSFET N-CH 600V 26A TO220

Infineon Technologies

490 4.76
- +

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Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 120mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
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